• Journal of rehabilitation welfare engineering & assistive technology
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• v.8 no.1
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• pp.1-7
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• 2014

In this study, the effect of the automotive haptic-seat technology which can transmit the driving information by the vibro-stimulus from the seat was investigated to overcome previous system's limitation relied on the visual and audial method and to help handicap driving. A prototype haptic seat covers with 30 coin-type motors and driver module were developed for this sake. A driving simulator on the 6-DOF motion-base was used for driving situation and we executed the seat vibro-stimulus test with 10 young participants who have normal tactile sense. The haptic recognition ratio by 30 locations was measured and analyzed in the result. The intensity of vibro-stimulus was adjusted by input voltage of motors (1.5V,2.5V,3.5V). All vibro-stimulus locations at 2.5V and 3.5V could be recognized by all participants and even in the lowest recognition ratio of 1.5V. The results showed that the seat vibration stimulus could be useful to transfer the drivers' information while driving.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2895-2898
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• 2009

The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.61-70
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• 2009

A 10b 30MS/s pipelined ADC operating under 1V power supply is presented. It utilizes a switched-RC based input sampling circuit and a resistive loop to reset the feedback capacitor in the multiplying digital-to-analog converter (MDAC) for the low-voltage operation. Cascaded switched-RC branches are used to achieve accurate grain of the MDAC for the first stage and separate switched-RC circuits are used in the sub-ADC to suppress the switching noise coupling to the MDAC input The measured differential and integral non-linearities of the prototype ADC fabricated in a 0.13${\mu}m$, CMOS process are less than 0.54LSB and 1.75LSB, respectively. The prototype ADC achieves 54.1dB SNDR and 70.4dB SFDR with 1V supply and 30MHz sampling frequency while consuming 17mW power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.384-392
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• 2003

The algorithm for calculating the base-collector breakdown voltage of NPN BJT for integrated circuits is proposed. The method of three-dimensional mesh generation to minimize the time required for device simulation is presented and the method for calculating the breakdown voltage using solutions of the Poisson´s equation is presented. To verify the proposed method, the breakdown voltage between base and collector of NPN BJT using 20V process and 30V process is compared with the measured data. The breakdown voltage from the proposed method of NPN BJT using 20V process shows an averaged relative error of 8.0% compared with the measured data and the breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data.

• Resources Recycling
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• v.30 no.6
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• pp.19-27
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• 2021

Electrically conductive mortar used in industrial carbon material byproducts was manufactured and analyzed in this study. The contents of the carbon material and mixed water were controlled, and the distance between electrodes was set to 0.42 m and 0.88 m. The carbon material was graphite with a layered structure. The carbon material was used as fine powder and aggregate substitutes according to particle size. The average particle sizes of each materials were 18.4㎛ and 546.1 ㎛ and the electrical conductivities were 62.3 S/m and 32.5 S/m, respectively. To maintain similar mortar flow in each sample, the water content was increased with increasing carbon material, and accordingly, the porosity showed an increasing trend. When electrode distance of the mortar (week 6) was 0.42 m, the voltage-current values were 342 V-1.48 A (S20) and 349 V-1.44 A (S30). For electrode distance of 0.88 m, these values were 513 V-0.98 A (S20) and 500 V-1.01 A (S30). The exothermic properties improved with increasing carbon material content and decreasing electrode distance.

• Journal of the Korean Society of Food Science and Nutrition
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• v.22 no.4
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• pp.437-442
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• 1993

Soybean curds were made from the mixture of soybean milk and cow's milk (raw milk) at the ratio of 10, 20, 30, 40, 50% (v/v), and then the general composition and mineral content, pH, yield, firmness by sensory evaluation and amino acid composition were investigated. As cow's milk addition increased, total sugar crude fat, crude protein, ash content, firmness, weight and volume of the soybean curd were increased. Whereas moisture content decreased, $Ca^{＋＋}$, $K^{＋}$, and Na$^{＋}$ were increased, but $Mg^{＋＋}$ and Fe$^{＋＋}$ decreased. In sensory evaluation, color (white), firmness, flavor, and taste were higher than those of control as cow's milk increased. By adding cow's milk at the ratio of 10, 20, 30, 40%, and 50%, sulfur containing amino acid content such as methionine and cystine were enriched 1.31, 1.58, 1.67, 1.85, and 1.95 times, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.243.1-243.1
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• 2013

본 연구에서는 산소 분압과 열처리 온도에 따른 ITZO 박막 트랜지스터의 전기적 특성 향상을 목적으로 실험을 진행하였다. 1) ITZO 박막 증착 시 산소 분압 가변($O_2/(Ar+O_2)$ 30~40%), 열처리 온도 고정($350^{\circ}C$)과 2) ITZO 박막 증착 시 산소 분압 고정(30%), 열처리 온도($200{\sim}400^{\circ}C$)를 가변하여 실험을 진행하였다. 두 실험 모두 특성향상을 위해 산소 분위기에서 열처리를 진행하였다. 산소의 분압이 증가할수록 산소 빈자리를 채우면서 전자 농도가 감소하여 채널 전도 효과가 줄어들면서 Hump 현상이 발생하였고, 스윙이 증가, 문턱 전압이 음의 방향으로 이동하였다. 이에 $O_2/(Ar+O_2)$)의 30%에서 30%일때, 문턱전압은 1.98 V, 전계 효과 이동도는 28.97 $cm2/V{\cdot}s$, sub-threshold swing은 280 mv/dec, on-off 비율은 ~107로 가장 우수한 전기적 특성을 보였다. 또한 열처리 온도 가변 시 $400^{\circ}C$에서 전계 효과 이동도는 28.97 $cm^2/V{\cdot}s$로 $200^{\circ}C$의 전계 효과 이동도는 11.59 $cm^2/V{\cdot}s$에 비해 약 3배 증가하였고, 소자의 스위칭 척도인 sub-threshold swing은 약 180 mv/dec 감소하였다. 문턱 전압은 0.97V, on-off ratio는 약 107을 보였다. 동일한 산소 분압의 분위기에서 $400^{\circ}C$ 열처리 시 가장 우수한 전기적 특성을 보였고, 저온 공정으로 인한 플렉서블 디스플레이 투명 디스플레이 적용 가능성을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Journal of the Korean Chemical Society
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• v.17 no.6
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• pp.428-433
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• 1973

The quantitative separations of a mixture containing equal amount of each anion such as Si(IV), As(V), P(V), S(VI), W(VI) and Cr(VI) are carried out by the elution through 20${\times}3.14cm^2$ column of anion exchange resin, Dowex 1${\times}$8. The eluents are a mixture of 0.07 M hydrochloric acid and 0.03 M sodium chloride (pH = 1.30) for Si(IV), As(V) and P(V) species, a mixture of 0.6 M sodium chloride and 0.3 M sodium hydroxide for S(VI), W(VI) and Cr(VI) species, and 0.1 N sodium sulfite (pH = 3.48) for P(V) and As(V) species. The subsidiary anions in a standard mixture such as Si(IV), As(V), S(VI), P(V) and W(VI) are separated together from large amount of Fe(III) by the elution through 30cm${\times}3.14cm^2$ column of the resin, Dowex${\times}$50w${\times}$12, using a mixture of 0.1 M sodium nitrate and 2 percent dimethylsulfoxide aqueous solution as an eluent. Si(IV), As(V), S(VI), P(V) and W(VI) eluted together are separated quantitatively under the same conditions as in the separations of the anion mixture. By the conditions obtained in the separations of the standard mixture, Fe(III) and all of the subsidiary anions in steel are quantitatively separated.