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The Algorithm for Calculating the Base-Collector Breakdown Voltage of NPN BJT Using the Solution of the Poisson′s Equation  

이은구 (인하대학교 전자공학과)
김태한 (인하대학교 전자공학과)
김철성 (인하대학교 전자공학과)
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Abstract
The algorithm for calculating the base-collector breakdown voltage of NPN BJT for integrated circuits is proposed. The method of three-dimensional mesh generation to minimize the time required for device simulation is presented and the method for calculating the breakdown voltage using solutions of the Poisson´s equation is presented. To verify the proposed method, the breakdown voltage between base and collector of NPN BJT using 20V process and 30V process is compared with the measured data. The breakdown voltage from the proposed method of NPN BJT using 20V process shows an averaged relative error of 8.0% compared with the measured data and the breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data.
Keywords
breakdown;
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Times Cited By KSCI : 2  (Citation Analysis)
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