• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.190.2-190.2
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• 2013

Vanadium dioxide ($VO_2$) has been widely attracted for academic research and industrial applications due to its metal-insulator transition (MIT) temperature close to room temperature. We synthesized VOx film on (0001) sapphire substrate with vanadium target (purity: 99.9%) using DC magnetron sputtering in Ar ambience at a pressure of $10^{-3}$ Torr at $400{\sim}700^{\circ}C$. The VOx film subsequently was annealed at difference temperatures in ambience of Ar and $O_2$ gas mixture at $60{\sim}800^{\circ}C$. The structural properties of the films were investigated using scanning electron microscopic (SEM), x-ray diffraction (XRD) and x-ray absorption fine structure (XAFS) measurements. SEM reveal that small grains formed on the substrates with a roughness surface. XRD shows oriented $VO_2$(020) crystals was deposited on the $Al_2O_3$(006) substrate. From I-V measurements, the electric resistance near its MIT temperature were dramatically changed by ${\sim}10^4$ during heating and cooling the films. We will also discuss the temperature-dependent local structural changes around vanadium atoms using XAFS measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.68-68
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• 1995

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
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• pp.37.3-37.3
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• 2004

• 센서학회지
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• 제20권4호
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• pp.230-233
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• 2011

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

• Journal of Electrical Engineering and Technology
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• 제7권5호
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• pp.784-788
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• 2012

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

• 한국재료학회지
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• 제5권7호
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• pp.850-857
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• 1995

반응성 전자빔 증착 방법으로 여러 산소압력 하에서 VO$_x$ 및 V$_{1-x}$ Sn$_{x}$O$_2$박막을 유리 위에 코팅하였다. Thermochromism과 천이온도는 spectrophotometer를 이용하여 여러 온도에서 파장에 따른 광투과율을 측정하여 조사하였다. 화학양론비를 RBS로 조사한 결과 산소 압력이 5$\times$$10^{-5}$ Torr 일때 가장 뚜렷한 thermochromic 효과를 나타내는 완전에 가까운 화학양론비를 갖는 VO$_2$박막을 제작할 수 있었다. 그리고 박막의 결정화를 위하여 rapid thermal annealing (RTA) 방법을 적웅한 결과 공기중에서 40$0^{\circ}C$~45$0^{\circ}C$에서 20~30초간의 어닐링 하였을 때가 두께 100~300nm의 박막을 결정화시키는데 최적조건으로 발견되었다. 또한, Sn을 VO$_2$에 1%~6% 첨가한 V$_{1-x}$ Sn$_{x}$O$_2$박막의 써모크로미즘 및 천이온도를 spectrophotometer로 근적외선의 투과율을 측정하여 조사한 결과 뚜렷한 thermochromism은 그대로 유지되었고 V$_{1-x}$ Sn$_{x}$O$_2$, 박막의 천이온도는 VO$_2$박막의 천이온도 보다 높게 나타났다.

• 센서학회지
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• 제16권6호
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• pp.407-412
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• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.

• 한국세라믹학회지
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• 제35권1호
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• pp.11-16
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• 1998

$VO_2$ thin films have been prepared on borosilicate glass substrate using alkoxide method to characterize the effects of fabricating factors on thermochromic performance. The gel films formed by spin coating were converted to $V_2O_5$ phase during oxidizing heat-tratment and the $VO_2$ phase were formed by reducing heat-treatement. The thermochromic switching properties of $VO_2$ thin films are strongly affected by the crystal phase and microstructure and those could be controlled by reducing heat-treatment conditions. The ther-mochromic switching characteristics of $VO_2$ thin films synthesized were measured at IR (2.5$\mu\textrm{m}$) as the transition temperature of $63^{\circ}C$ the transition width of $3.6^{\circ}C$and the maximum and minimum transmittance of 84% and 14% respectively.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.727-732
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• 2008

In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.