• 제목/요약/키워드: $SnO_2$ and Sn and $Ag_3Sn$

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이중 전기방사법을 이용하여 SnO2-Sn-Ag3Sn 나노 입자가 균일하게 내재된 탄소 나노섬유의 합성 (Synthesis of Well-Distributed SnO2-Sn-Ag3Sn Nanoparticles in Carbon Nanofibers Using Co-Electrospinning)

  • 안건형;안효진
    • 한국재료학회지
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    • 제23권2호
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    • pp.143-148
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    • 2013
  • Well-distributed $SnO_2$-Sn-$Ag_3Sn$ nanoparticles embedded in carbon nanofibers were fabricated using a co-electrospinning method, which is set up with two coaxial capillaries. Their formation mechanisms were successfully demonstrated. The structural, morphological, and chemical compositional properties were investigated by field-emission scanning electron spectroscopy (FESEM), bright-field transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In particular, to obtain well-distributed $SnO_2$ and Sn and $Ag_3Sn$ nanoparticles in carbon nanofibers, the relative molar ratios of the Ag precursor to the Sn precursor including 7 wt% polyacrylonitrile (PAN) were controlled at 0.1, 0.2, and 0.3. The FESEM, bright-field TEM, XRD, and XPS results show that the nanoparticles consisting of $SnO_2$-Sn-$Ag_3Sn$ phases were in the range of ~4 nm-6 nm for sample A, ~5 nm-15 nm for sample B, ~9 nm-22 nm for sample C. In particular, for sample A, the nanoparticles were uniformly grown in the carbon nanofibers. Furthermore, when the amount of the Ag precursor and the Sn precursor was increased, the inorganic nanofibers consisting of the $SnO_2$-Sn-$Ag_3Sn$ nanoparticles were formed due to the decreased amount of the carbon nanofibers. Thus, well-distributed nanoparticles embedded in the carbon nanofibers were successfully synthesized at the optimum molar ratio (0.1) of the Ag precursor to the Sn precursor after calcination of $800^{\circ}C$.

SnO2/AgNi/SnO2 다중층 구조의 투명 전극 특성 (Transparent Electrode Characteristics of SnO2/AgNi/SnO2 Multilayer Structures)

  • 황민호;이현용
    • 한국전기전자재료학회논문지
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    • 제37권5호
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    • pp.500-506
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    • 2024
  • The transparent electrode characteristics of the SnO2/AgNi/SnO2 (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N2 atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO2/Ag/SnO2 was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO2/AgNi/SnO2 mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO2/Ag-Ni (3.2 at%)/SnO2 was estimated to be approximately 2.38×10-2-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO2/Ag-Ni (3.2 at%)/SnO2 multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

분말성형법으로 제조된 Ag-SnO2-Bi2O3 접점소재의 미세조직 및 특성 (Microstructure and Characteristics of Ag-SnO2-Bi2O3 Contact Materials by Powder Compaction)

  • 이진규
    • 한국분말재료학회지
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    • 제29권1호
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    • pp.41-46
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    • 2022
  • In this study, we report the microstructure and characteristics of Ag-SnO2-Bi2O3 contact materials using a controlled milling process with a subsequent compaction process. Using magnetic pulsed compaction (MPC), the milled Ag-SnO2-Bi2O3 powders have been consolidated into bulk samples. The effects of the compaction conditions on the microstructure and characteristics have been investigated in detail. The nanoscale SnO2 phase and microscale Bi2O3 phase are well-distributed homogeneously in the Ag matrix after the consolidation process. The successful consolidation of Ag-SnO2-Bi2O3 contact materials was achieved by an MPC process with subsequent atmospheric sintering, after which the hardness and electrical conductivity of the Ag-SnO2-Bi2O3 contact materials were found to be 62-75 HV and 52-63% IACS, respectively, which is related to the interfacial stability between the Ag matrix, the SnO2 phase, and the Bi2O3 phase.

$Ag/{\alpha}-Al_2O_3Ag/SnO_2$ 촉매상에서의 에틸렌 산화반응 (Oxidation of Ethylene over $Ag/{\alpha}-Al_2O_3Ag/SnO_2$)

  • 전기원;한종수;전학제
    • 대한화학회지
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    • 제28권2호
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    • pp.109-113
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    • 1984
  • 여러가지 함량으로 은을 입힌$ Ag/{\alpha}-Al_2O_3$$Ag/SnO_2$상에서의 반응실험과 촉매의 Auger spectra, $SnO_2$에 흡착된 산소의 EPR spectra를 비교하여 담체의 종류가 에틸렌 산화반응의 활성과 선택성에 미치는 영향을 조사하였다. $SnO_2$상에서는 흡착산소중 O-가 반응에 참여하여 ethylene를 완전 산화하는 방향으로 유도하므로써 ethylene oxide 생성의 선택성을 저하시키는 것 같다.

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전기화학적 환원 분석을 통한 무연 솔더 합금의 산화에 대한 연구 (The Oxidation Study of Lead-Free Solder Alloys Using Electrochemical Reduction Analysis)

  • 조성일;유진;강성권
    • 마이크로전자및패키징학회지
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    • 제12권1호
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    • pp.35-40
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    • 2005
  • 전자 부품에 인체에 유해한 납을 사용하지 않기 위해서 Sn을 주 원소로 한 무연 솔더 합금의 개발이 활발히 진행되고 있다. 무연 솔더 합금의 열역학적, 기계적 특성은 많이 연구되었으나 산화 거동에 대해서는 거의 연구가 되어있지 않다. 따라서 본 연구에서는 Sn 및 Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, Sn-9Zn 합금에 대해 $150^{\circ}C$ 산화 거동을 연구하였다. 전기화학적 환원 분석을 통해 표면에 형성된 산화물의 종류와 양을 분석하여 합금 원소에 따른 산화 거동을 비교하였고 XPS 표면분석을 통하여 환원 실험 결과를 뒷받침하였다. 또한 합금 원소에 따른 산화물 성장 속도를 비교하였다. Sn-0.7Cu 와 Sn-3.5Ag의 경우 Sn의 산화와 비슷한 거동을 보였다. 산화 초기에는 SnO가 형성되고 산화가 진행됨에 따라 SnO 와 $SnO_2$가 같이 존재하되 $SnO_2$가 우세하게 성장하였다. Zn를 포함한 Sn 합금의 경우 ZnO와 $SnO_2$가 형성되었다. Zn의 첨가로 인해 $SnO_2$의 형성이 촉진되었고 SnO는 억제하는 것을 발견하였다.

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Mn-SnO2/Ag/Mn-SnO2 3중 다층막의 성능지수와 밴딩 특성 (Figure of merit and bending characteristics of Mn-SnO2/Ag/Mn-SnO2 tri-layer film)

  • 조영수;장건익
    • 한국결정성장학회지
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    • 제31권4호
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    • pp.190-195
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    • 2021
  • 상온에서 PET 기판 위에 Mn-SnO2/Ag/Mn-SnO2 3중 다층막을 RF/DC 마그네트론 스파터링 방식으로 제조하였다. EMP 시뮬레이션 결과에 따라 Mn-SnO2의 막 두께는 40 nm, Ag 막 두께는 13 nm로 고정하였다. 550 nm 파장대역에서 측정한 3중막의 투과율은 82.9에서 88.1 % 범위였으며 면저항은 5.9에서 6.9 Ω/☐로 변화하였다. 가장 높은 성능지수(ϕTC)는 48.1 × 10-3 Ω-1로 나타났다. 곡률반경 4, 5 mm 조건에서 inner 밴딩과 out 밴딩의 굽힘시험을 10,000회 실시한 결과 Mn-SnO2/Ag/Mn-SnO2 3중막의 저항변화율은 약 1.5 %로 탁월한 기계적 유연성을 보였다.

급속응고한 Ag-X%Zn계 전기접점재료에 미치는 Sn함량의 영향 (The Effect of the Sn contents on Rapidly Solidified Ag-X%Zn Electric Contact Materials)

  • 김종규;장대정;주광일;이은호;엄승열;남태운
    • 한국주조공학회지
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    • 제28권4호
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    • pp.184-189
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    • 2008
  • Ag-Cd alloy has been widely used as an electrical contact material, since Ag-Cd alloy has a good wear resistance and stable contact resistance. But nowadays Ag-Cd alloy is not considered as electrical contact material any more due to detrimental effect on environments. Currently, active researches are being performed on ($Ag-SnO_2$ and $Ag-SnO_{2}-In_{2}O_{3}$) as an alternative solution which can fix the remaining environmental problems. However, $In_{2}O_{3}$ is relatively expensive and Ag-Sn alloy has low wear resistance. Our recent research results show that Ag-X%Zn-Y%Sn has similar physical and chemical properties. In the present study, so we tried to change and to optimize the Zn oxide content to over 6 wt% and Sn oxide content with 0.5, 1.0, 1.5 wt%. Results obtained from the experiments on the Ag-X%ZnO-Y%$SnO_2$ are discussed.

도전성접착제/Sn도금의 계면특성에 미치는 Cl의 영향 (Effect of Cl Content on Interface Characteristics of Isotropic Conductive Adhesives/Sn Plating Interface)

  • 김근수;이기주;;허석환
    • 마이크로전자및패키징학회지
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    • 제18권3호
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    • pp.33-37
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    • 2011
  • 본 연구에서는 Ag-에폭시계 도전성접착제와 Sn도금 부품의 접합체를 이용하여 고온 고습 분위기($85^{\circ}C$/85%RH) 중에서의 미세조직과 전기저항의 변화를 중심으로 계면열화에 미치는 Cl의 영향을 검토하였다. $85^{\circ}C$/85%RH 분위기에서 전형적인 Cl량이 함유된 Ag-에폭시계 도전성접착제를 사용한 접합체의 전기저항은 Cl 함유량이 적은 접합제를 사용한 접합체에 비해 시간의 경과에 따라 급격히 증가하는 경향을 나타내었다. 그 원인을 밝히기 위해 미세조직을 분석한 결과, 고Cl 접합체의 경우, Sn 산화물과 Sn-Cl-O가 Sn도금/Ag-에폭시계 도전성접착제의 계면에 불균일하게 생성되어 있는 반면, 저Cl 접합체에서는 Sn-Cl-O생성이 관찰되지 않았고, Sn산화물도 비교적 적은 것을 알았다. 이러한 결과들을 통해 Ag-에폭시계 도전성접착제에 함유된 Cl이 Ag-에폭시계 도전성접착제와 Sn도금 부품 접합체의 전기적 열화를 가속시키는 원인 중의 하나임을 알았다.

공증발과 열산화로 제조한 Ag-CuO-SnO2 박막에서 미세조직과 CO 가스 감지특성 (Microstructure and CO Gas Sensing Properties of Ag-CuO-SnO2 Thin Films Prepared by Co-Evaporation and Thermal Oxidation)

  • 지인걸;한규석;오재희;고태경
    • 한국세라믹학회지
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    • 제46권4호
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    • pp.429-435
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    • 2009
  • In this study, we investigated microstructure and the CO gas sensing properties of Ag-CuO-$SnO_2$ thin films prepared by co-evaporation and subsequently thermal oxidation at air atmosphere. The sensitivity of a Cu-Sn films, thermally oxidized at $600^{\circ}C$, is strongly affected by the amount of Cu. At Cu:7 wt%-Sn:93 wt%, the film exhibited a maximum sensitivity of ${\sim}2.3$ to CO gas of 1000 ppm at $300^{\circ}C$. In contrast, the sensitivity of a Sn-Ag film did not change significantly with the amount of Ag. An enhanced sensitivity of ${\sim}3.7$ was observed in the film with a composition of Ag:3 wt%-Cu:4 wt%-Sn:93 wt%, when thermally oxidized at $600^{\circ}C$. In addition, this thin film shows a response time of ${\sim}80$ sec and a recovery time of ${\sim}450$ sec to 1000 ppm CO gas. The results demonstrate that the CO sensitivity of the Ag-CuO-$SnO_2$ thin films may be closely associated with coexistence of $SnO_2$ and SnO phase, decrease in average particle size, and a porous microstructure. We also suggest that co-evaporation and followed by thermal oxidation is a very simple and effective method to prepare oxide gas sensor thin films.

Glass 위에 증착된 SnO2/Ag/Nb2O5/SiO2/SnO2 다층 투명전도막의 성능지수 (Figure of Merit of SnO2/Ag/Nb2O5/SiO2/SnO2 Transparent Conducting Multilayer Film Deposited on Glass Substrate)

  • 김진균;이상돈;장건익
    • 한국전기전자재료학회논문지
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    • 제30권2호
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    • pp.81-85
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    • 2017
  • $SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).