• 전기전자학회논문지
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• 제22권1호
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• pp.205-208
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• 2018

본 연구에서는 상시불통형 p-AlGaN-게이트 질화갈륨(GaN) 이종접합 트랜지스터의 신뢰성 평가를 위한 가속열화 시험 조건을 수립하기 위해 게이트 전압 열화 시험을 진행하였다. 상시불통형 트랜지스터의 동작 조건을 고려하여 기존 상시도통형 쇼트키-게이트 소자평가에 사용되는 게이트 역전압 시험과 더불어 순전압 시험을 수행하여 열화특성을 분석하였다. 기존 상시도통형 소자와 달리 상시불통형 소자에서는 게이트 역전압 시험에 의한 열화는 관찰되지 않은 반면, 게이트 순전압 시험에서 심한 열화가 관찰되었다. 상시불통형 질화갈륨 전력 반도체 소자의 신뢰성 평가에 게이트 순전압 열화 시험이 포함되어야 함을 제안한다.

• 대한수학회보
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• 제50권3호
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• pp.983-991
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• 2013

For each real number $n$ > 6, we prove that there is a sequence $\{pk(n,z)\}^{\infty}_{k=1}$ of fourth degree self-reciprocal polynomials such that the zeros of $p_k(n,z)$ are all simple and real, and every $p_{k+1}(n,z)$ has the largest (in modulus) zero ${\alpha}{\beta}$ where ${\alpha}$ and ${\beta}$ are the first and the second largest (in modulus) zeros of $p_k(n,z)$, respectively. One such sequence is given by $p_k(n,z)$ so that $$p_k(n,z)=z^4-q_{k-1}(n)z^3+(q_k(n)+2)z^2-q_{k-1}(n)z+1$$, where $q_0(n)=1$ and other $q_k(n)^{\prime}s$ are polynomials in n defined by the severely nonlinear recurrence $$4q_{2m-1}(n)=q^2_{2m-2}(n)-(4n+1)\prod_{j=0}^{m-2}\;q^2_{2j}(n),\\4q_{2m}(n)=q^2_{2m-1}(n)-(n-2)(n-6)\prod_{j=0}^{m-2}\;q^2_{2j+1}(n)$$ for $m{\geq}1$, with the usual empty product conventions, i.e., ${\prod}_{j=0}^{-1}\;b_j=1$.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제11권1호
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• pp.15-22
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• 2004

In this paper, we investigate asymptotic stability, oscillation, asymptotic behavior and existence of the period-2 solutions for difference equation $x_{n+1}\;=\;{\alpha}\;+\;\beta{x_{n-1}}^{p}/{x_n}^p$ where ${\alpha}\;{\geq}\;0,\;{\beta}\;>\;0.\;$\mid$p$\mid$\;{\geq}\;1$, and the initial conditions $x_{-1}\;and\;x_0$ are arbitrary positive real numbers.

• Korean Journal of Mathematics
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• 제16권3호
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• pp.323-334
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• 2008

We define injective and projective representations of quivers with two vertices with n arrows. In the representation of quivers we denote n edges between two vertices as ${\Rightarrow}$ and n maps as $f_1{\sim}f_n$, and $E{\oplus}E{\oplus}{\cdots}{\oplus}E$ (n times) as ${\oplus}_nE$. We show that if E is an injective left R-module, then $${\oplus}_nE{\Longrightarrow[50]^{p_1{\sim}p_n}}E$$ is an injective representation of $Q={\bullet}{\Rightarrow}{\bullet}$ where $p_i(a_1,a_2,{\cdots},a_n)=a_i,\;i{\in}\{1,2,{\cdots},n\}$. Dually we show that if $M_1{\Longrightarrow[50]^{f_1{\sim}f_n}}M_2$ is an injective representation of a quiver $Q={\bullet}{\Rightarrow}{\bullet}$ then $M_1$ and $M_2$ are injective left R-modules. We also show that if P is a projective left R-module, then $$P\Longrightarrow[50]^{i_1{\sim}i_n}{\oplus}_nP$$ is a projective representation of $Q={\bullet}{\Rightarrow}{\bullet}$ where $i_k$ is the kth injection. And if $M_1\Longrightarrow[50]^{f_1{\sim}f_n}M_2$ is an projective representation of a quiver $Q={\bullet}{\Rightarrow}{\bullet}$ then $M_1$ and $M_2$ are projective left R-modules.

• Korean Journal of Mathematics
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• 제21권4호
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• pp.495-502
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• 2013

Let $\mathcal{T}^{(p)}_n$ be the set of p-ary labeled trees on $\{1,2,{\ldots},n\}$. A maximal decreasing subtree of an p-ary labeled tree is defined by the maximal p-ary subtree from the root with all edges being decreasing. In this paper, we study a new refinement $\mathcal{T}^{(p)}_{n,k}$ of $\mathcal{T}^{(p)}_n$, which is the set of p-ary labeled trees whose maximal decreasing subtree has k vertices.

• Animal Systematics, Evolution and Diversity
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• 제14권4호
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• pp.335-340
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• 1998

한국의 남해에서 채집된 모래해면 속의 2신종, 삼양모래해면(Psammocinia samyangensis n. sp.)과 완도모래해면 (P. wandoensis n. sp.)을 명명하고 기재하였다. 완도모래해면은 호주의 P. rugosa(Lendenfeld, 1889)와 외형에서 많이 유사하지만 filaments에서 차이를 나타내며, 삼양모래해면은 제주모래해면(P. jejuensis)과 유사하나 섬유의 형태에서 차이를 나타낸다.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

• 대한수학회지
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• 제57권3호
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• pp.747-775
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• 2020

In this work we investigate the nonlocal elliptic equation with critical Hardy-Sobolev exponents as follows, $$(P)\;\{(-{\Delta}_p)^su={\lambda}{\mid}u{\mid}^{q-2}u+{\frac{{\mid}u{\mid}^{p{^*_s}(t)-2}u}{{\mid}x{\mid}^t}}{\hspace{10}}in\;{\Omega},\\u=0{\hspace{217}}in\;{\mathbb{R}}^N{\backslash}{\Omega},$$ where Ω ⊂ ℝ^N is an open bounded domain with Lipschitz boundary, 0 < s < 1, λ > 0 is a parameter, 0 < t < sp < N, 1 < q < p < p^∗_s where $p^*_s={\frac{N_p}{N-sp}}$, $p^*_s(t)={\frac{p(N-t)}{N-sp}}$, are the fractional critical Sobolev and Hardy-Sobolev exponents respectively. The fractional p-laplacian (-∆_p)^su with s ∈ (0, 1) is the nonlinear nonlocal operator defined on smooth functions by $\displaystyle(-{\Delta}_p)^su(x)=2{\lim_{{\epsilon}{\searrow}0}}\int{_{{\mathbb{R}}^N{\backslash}{B_{\epsilon}}}}\;\frac{{\mid}u(x)-u(y){\mid}^{p-2}(u(x)-u(y))}{{\mid}x-y{\mid}^{N+ps}}dy$, x ∈ ℝ^N. The main goal of this work is to show how the usual variational methods and some analysis techniques can be extended to deal with nonlocal problems involving Sobolev and Hardy nonlinearities. We also prove that for some α ∈ (0, 1), the weak solution to the problem (P) is in C^1,α(${\bar{\Omega}}$).

• 한국재료학회지
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• 제18권8호
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• pp.450-453
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• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

• 대한수학회보
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• 제50권1호
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• pp.11-24
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• 2013

Let m and n be fixed positive integers and M a right R-module. Recall that M is said to be ($m$, $n$)-injective if $Ext^1$(P, M) = 0 for any ($m$, $n$)-presented right R-module P; M is said to be ($m$, $n$)-flat if $Tor_1$(N, P) = 0 for any ($m$, $n$)-presented left R-module P. In terms of some derived functors, relative injective or relative flat resolutions and dimensions are investigated. As applications, some new characterizations of von Neumann regular rings and p.p. rings are given.