• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Chemical Society
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• v.20 no.1
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• pp.73-86
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• 1976

Four unreported derivatives of N-arylsulfonylbenzamide and six derivatives of N-arylsulfonylbenzimidothiophenyl ester were prepared. These were; p-methyl-N-(arylsulfonyl)benzamide, m-methyl-N-(arylsulfonyl)benzamide, m-nitro-N-(arylsulfonyl)benzamide, p-methoxy-N-(arylsulfonyl)benzamide, p-methyl-N-(arylsulfonyl)benzimidothiophenyl esters, p-chloro-N-(arylsulfonyl)benzimidothiophenyl ester, m-methyl-N-(arylsulfonyl)benzimidothiophenyl ester, p-nitro-N-(arylsulfonyl)benzimidothiophenyl ester, m-nitro-(arylsulfonyl)benzimidothiophenyl ester and p-methoxy-N-(arylsulfonyl)benzimidothiophenyl ester. The rate constants of the hydrolysis of N-arylsulfonylbenzimidothiophenyl esters were determined by ultraviolet spectrophotometry at various pH and rate equations which can be applied over a wide pH range were obtained. From the rate equation and substituent effects, one can conclude that above pH 11, the hydrolysis of N-arylsulfonylbenzimidothiophenyl esters are initiated by the attack of hydroxide ion, however, below pH 9, started by the addition of a water molecule on the azomethine group. At pH 9∼11, the competitive reaction between a water molecule and hydroxide ion is anticipated to occur.

• Journal of the Korean Chemical Society
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• v.25 no.6
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• pp.383-389
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• 1981

Thianthrene cation radical perchlorate reacts with N-arylsulfonamides such as p-toluenesulfonanilide, benzenesulfonanilide, N-(2-methylphenyl)benzenesulfonamide, and N-phenyl-p-toluenesulfonanilide to give 5-(p-N-p-toluenesulfonamidophenyl)-(1a), 5-(p-N-benzenesulfonamidophenyl)-(1b), 5-(4-N-benzenesulfonamido-3-methylphenyl)-(1c), and 5-(p-N-phenyl-N-p-toluenesulfonamidophenyl thianthrenium perchlorate (1d), respectively. In the meantime, 1d reacts further with thiathrene cation ratical to form diperchlorate(1e). The structure of 1a~1e is very similar to 5-(p-acetamidophenyl) thianthrenium perchlorate which has been obtained from the reaction with acetanilide. However, the discrepancy in the stoichiometry between two reactions indicates that the reaction with sulfonamide appears not to proceed with a single mechanism.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.224-236
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• 2013

This work presents a comparative study of four Double Gate tunnel FET (DG-TFET) architectures: conventional p-i-n DG-TFET, p-n-p-n DG-TFET, a gate dielectric engineered Heterogate (HG) p-i-n DG-TFET and a new device architecture with the merits of both Hetero Gate and p-n-p-n, i.e. HG p-n-p-n DG-TFET. It has been shown that, the problem of high gate capacitance along with low ON current for a p-i-n TFET, which severely hampers the circuit performance of TFET can be overcome by using a p-n-p-n TFET with a dielectric engineered Hetero-gate architecture (i.e. HG p-n-p-n). P-n-p-n architecture improves the ON current and the heterogeneous dielectric helps in reducing the gate capacitance and suppressing the ambipolar behavior. Moreover, the HG architecture does not degrade the output characteristics, unlike the gate drain underlap architecture, and effectively reduces the gate capacitance.

• Journal of the Korean Chemical Society
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• v.27 no.4
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• pp.294-301
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• 1983

Six new compounds of p-acetamidobenzenesulfonamides which contain O, O'-diethyl-1-aminobenzylphosphonate and their derivatives were prepared: O, O'-diethyl N-(p-acetamidobenzenesulfonyl) aminobenzylphosphonate, N-(p-acetamidobenzenesulfonyl) aminobenzylphosphonic acid, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl) glycyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-DL-alanyl] aminobenzylphosphonate, O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-L-leucyl] aminobenzylphosphonate, and O,O'-diethyl N-[N-(p-acetamidobenzenesulfonyl)-L-phenylalanyl]aminobenzylphosphonate. All the compounds were obtained as white crystals and characterized by means of elemental analysis and infrared spectroscopy.

• East Asian mathematical journal
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• v.31 no.1
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• pp.103-107
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• 2015

We use some known contiguous function relations for $_2F_1$ to show how simply the following three recurrence relations for Jacobi polynomials $P_n^{({\alpha},{\beta)}(x)$: (i) $({\alpha}+{\beta}+n)P_n^{({\alpha},{\beta})}(x)=({\beta}+n)P_n^{({\alpha},{\beta}-1)}(x)+({\alpha}+n)P_n^{({\alpha}-1,{\beta})}(x);$ (ii) $2P_n^{({\alpha},{\beta})}(x)=(1+x)P_n^{({\alpha},{\beta}+1)}(x)+(1-x)P_n^{({\alpha}+1,{\beta})}(x);$ (iii) $P_{n-1}^{({\alpha},{\beta})}(x)=P_n^{({\alpha},{\beta}-1)}(x)+P_n^{({\alpha}-1,{\beta})}(x)$ can be established.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.162-167
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• 2013

An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.

• BMB Reports
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• v.34 no.3
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• pp.225-229
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• 2001

Besides a variety of quinones, purified bovine liver quinone reductase catalyzed the reduction of N,N-p-nitrosoaniline to N,N-dimethyl-p-phenylenediamine. The formation of N,N-dimethyl-p-phenylenediamine was identified by TLC, GC, GC-MS and NMR. Quinone reductase can utilize either NADH or NADPH as a source of reducing equivalents. The apparent Km for 1,4-benzoquinone and N,N-dimethyl-p-nitrosoaniline was 1.64 mM and 0.22 mM, respectively The reduction of N,N-dimethyl-p-nitrosoaniline was almost entirely hampered by dicumarol or Cibacron blue 3GA, potent inhibitors of mammalian quinone reductase. During the bovine liver quinone reductase-catalyzed reduction of N,N-dimethyl-p-nitrosoaniline, benzoquinonediiminium ion was produced.

• Bulletin of the Korean Mathematical Society
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• v.60 no.4
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• pp.863-872
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• 2023

Let n ⩾ 2 be an integer, we denote the smallest integer b such that gcd {(ⁿ_k) : b < k < n - b} > 1 as b(n). For any prime p, we denote the highest exponent α such that p^α | n as v_p(n). In this paper, we partially answer a question asked by Hong in 2016. For a composite number n and a prime number p with p | n, let n = a_mp^m + r, 0 ⩽ r < p^m, 0 < a_m < p. Then we have $$v_p\(\text{gcd}\{\(n\\k\)\;:\;b(n)1\}\)=\{\array{1,&&a_m=1\text{ and }r=b(n),\\0,&&\text{otherwise.}}$$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.