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http://dx.doi.org/10.5757/JKVS.2013.22.3.162

Simulation Study on Heterojunction InGaP/InAlGaP Solar Cell  

Kim, Junghwan (Department of Energy and Mineral Resources Engineering, Sejong University)
Publication Information
Journal of the Korean Vacuum Society / v.22, no.3, 2013 , pp. 162-167 More about this Journal
Abstract
An epitaxial layer structure for heterojunction p-InGaP/N-InAlGaP solar cell has proposed. Simulation for current density-voltage characteristics has been performed on p-InGaP/N-InAlGaP structure and the simulation results were compared with p-InGaP/p-GaAs/N-InAlGaP structure and homogeneous InGaP pn junction structure. The simulation result showed that the maximum output power and fill factor have greatly increased by replacing n-InGaP with N-InAlGaP. The thicknesses of p-InGaP and n-InAlGaP were optimized for the epitaxial layer structure of p-InGaP/N-InAlGaP.
Keywords
Solar cells; Heterojunction; Pn junction; Compound semiconductors;
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Times Cited By KSCI : 1  (Citation Analysis)
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