• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.243-246
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• 2006

The LiCoO2 thin films were prepared on the Pt/Ti/SiO2/Si substrate by spin coating using citrate sol. The citrate sol was spin-coated on substrate and dried at 380oC for 15 min. to evaporate the solvents and remove the organic materials. The as-deposited films were annealed at 750oC for 10 min. in air for crystallization. The X-ray diffraction patterns for the film have been indexed hexagonal system with space group R3m. The active area of LiCoO2 films for electrochemical test was about 11cm2. A Li foil and 1M LiClO4 in propylene carbonate(PC) and ethylene carbonate(EC) (1:1)were used as an anode and an electrolyte, respectively. The galvanostatic charge-discharge test was carried out at constant current density ranging from 5 A/cm2 in the voltage window between 4.2 and 3.0 V. The first discharge capacity of the film is 0.35Ah/cm2-m. The cycling behavior of the LiCoO2 film is also reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.275-285
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• 1996

The effect of heat-treatment on catalytic crystallization in $LI_2O-Al_2O_3-SiO_2$ glass system over its glass transition temperature was investigated. Glass composition $4Li_2O{cdot}22AL_2O_3{cdot}66SiO_2{cdot}2TiO_2{cdot}2.5ZrO_2{cdot}1.5P_2O_5{cdot}1.0Na_2O{cdot}1.0As_2O_3$ (wt%) was selected and heat-treated at different heating conditions to obtain transparent glass-ceramic. Nucleation and crystallization behaviour of this composition were estimated by differential thermal analysis (DTA) and X-ray diffractometer (XRD) and its thermal expansion coefficients were measured by Dilatometer. As a result, glass transition temperature was $730^{\circ}C$ and two maximum nucleation temperatures were estimated at $730^{\circ}C$ and 82$0^{\circ}C$ using JMA(Johson-Mehl-Avrami) equation by DTA. $ZrTiO_4$ $\beta$-Quartz solid solution and $\beta$-Spodumene crystals were identified by XRD. The optimum crystallization temperature was 92$0^{\circ}C$ and three step heating schedule was expected to be useful to obtain transparent glass-ceramic.

• Journal of Electrochemical Science and Technology
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• v.3 no.2
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• pp.72-79
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• 2012

$Li_2MnSiO_4$ was synthesized using the solid-state method under an Ar atmosphere at three different calcination temperatures (900, 950, and $1000^{\circ}C$). The optimization of the carbon coating was also carried out using various molar concentrations of adipic acid as the carbon source. The XRD pattern confirmed that the resulting $Li_2MnSiO_4$ particles exhibited an orthorhombic structure with a $Pmn2_1$ space group. Cyclic voltammetry was utilized to investigate the capacitive behavior of $Li_2MnSiO_4$ along with activated carbon (AC) in a hybrid supercapacitor with a two-electrode cell configuration. The $Li_2MnSiO_4$/AC cell exhibited a high discharge capacitance and energy density of $43.2Fg^{-1}$ and $54Whkg^{-1}$, respectively, at $1.0mAcm^{-2}$. The $Li_2MnSiO_4$/AC hybrid supercapacitor exhibited an excellent cycling stability over 1000 measured cycles with coulombic efficiency over > 99 %. Electrochemical impedance spectroscopy was conducted to corroborate the results that were obtained and described.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.145.2-145
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• 2002

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.43-45
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• 2001

For photosensitive and micro-structuring in $Li_2O-A1_2O_3-SiO_2$glasses by laser treatment, Nd:YAG laser in 355 nm and 1064 nm wavelength was irradiated to the glass to investigate fracture characterization and optical changes. The fractured glass surfaces irradiated by 1064 nm laser was observed by Scanning Electron Microscope(SEM) and optical microscope, and optical changes caused by 355 nm later was identified from absorption spectra. In this study, it could be expected that the laser treatment technology will be utilized for 3-dimensional micro-structure, internal waveguide, optical memory by optical absorption changes in glass matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.70-73
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• 2001

MFIS(Metal-ferroelectric-insulator- semiconductor) structures using silicon oxynitride(SiON) buffer layers were fabricatied and demonstrated nonvolatile memory operations. Oxynitride(SiON) films have been formed on p-Si(100) by RTP(rapid thermal process) in O$_2$+N$_2$ ambient at 1100$^{\circ}C$. The gate leakage current density of Al/SiON/Si(100) capacitor was about the order of 10$\^$-8/ A/cm$^2$ at the range of ${\pm}$ 2.5 MV/cm. The C-V characteristics of Al/LiNbO$_3$/SiON/Si(100) capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 24. The memory window width was about 1.2V at the electric field of ${\pm}$300 kV/cm ranges.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.283-287
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• 1990

The study was aimed at investigating sintering characteristics, the overall properties from the ternary Li2O-Al2O3-SiO2 system. This system, which was considered without additives and selected five compositions, was studied with variation of the amount of SiO2. The reactivity of the system was observed by D.T.A.. Characteristics of sintering, microstructure, property and stability of produced phase were studied. It was found that because the range of sintering was narrow and the temperature of sintering was close to the melting temperature, the sintering by the general method was difficult. Also, these linear thermal expansion coeffecients were measured.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.108-108
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.217.1-217
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• 2003