• Journal of Korean Society for Atmospheric Environment
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• v.14 no.4
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• pp.361-368
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• 1998

Acid rainwater samples were collected during 4 years from 1992 in Pusan area nearby seaside. Ionic composition of early and succeeding rainwater were investigated to identify emission sources. pH and Electronic Conductivity of samples were measured immediately after sampling. Major ion concentrations of rain samples were Na+, Ca2+, Mg2+, K+, NH4+, SO42-, NO3-, Cl- which were analyzed by ion Chromatography. 55% of early rainwater and 90% of succeeding rainwater were identified below pH 5.6. Because, Na+, K+, Ca2+ were washed mostly in early rainwater, as a result, pH values were increased by increasing rainfall amounts. It was studied that pH value was varied from ambient ion component, rainfall, and rain intensity. From the principal component analysis result, the dominant components of acid rainwater were Na+, K2+, Mg2+, Ca2+, the elements were contributed soil and marine source, the second components nuts -SO42-, SO4a-, NO3-, nuts -Ca2+ originated from man - made source.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1782-1784
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• 1997

Using particle-in-cell(PIC) and Monte Carlo collision(MCC), we investigate the trajectory of electrons and the characteristics of D.C. discharge In Wire Ion Plasma Source(WIPS).

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.179-185
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• 2009

Diamond-like carbon(DLC) films were deposited by linear ion source(LIS)-physical vapor deposition method changing the anode voltages from 800 V to 1800 V, and characteristics of the films were investigated using residual stress tester, nano-indentation, micro raman spectroscopy, scratch tester and Field Emission Scanning Electron Microscope(FE-SEM). The results showed that the residual stress and hardness increased with increasing the ion energy up to anode voltage of 1400 V. It was also found that the content of $SP^3$ carbon increased with increasing the anode voltage $SP^3/SP^2$ ratio through investigation of $SP^3/SP^2$ ratio by the micro-raman analysis. From these results, it can be concluded that the physical properties of DLC films such as residual stress and hardness are increased with increasing the anode voltage. These results can be explained that 3-dimensional cross-links between carbon atoms and Dangling bond are enhanced and the internal compressive stress also increased with increasing the anode voltage. The optimal anode voltage is considered to be around 1400 V in these experimental conditions.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.33-40
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• 2010

In this research, the effects for surface Improvement of plasma ion implanted carbide endmill tools were observed by measuring cutting forces and tools wear affecting surface roughness in high speed cutting. From the 2nd ion mass analysis, the oxidation layer was found to be built up by sputtering. The residual gas contamination of oxygen was found to be contained impurities in nitrogen gas. The plasma implanted ion was found to be spreaded, especially the nitrogen was implanted up to 150nm depth as impressed voltage and ion implanting time. It is analyzed as bring surface improvement by spreading deeply forming oxidation on surface. The factors in Analysis of Variance(ANOVA) about mutuality cause reference of cutting force. The cutting force Fx is affected by the interaction of spindle rpm and federate, the cutting force Fy is influenced by spindle rpm and time injected ion, and cutting force Fz is affected by the interaction of impressed voltage and feedrate. Also, it was found that the cutting forces of implanted tools become lower and the surface roughness is improved by the effect of nitrogen according to the implantation.

• Journal of the Korean institute of surface engineering
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• v.38 no.6
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• pp.234-240
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• 2005

In this study, ion nitriding of a EHA pump part made of AISI 4340 steel was performed under different applied power conditions to study the relationship between dimensional changes of specimens and the type of applied power source. Microstructures and micohardness distribution at different processing conditions were also examined. Duplex surface treatment of ion nitriding with the optimum process conditions to produce the minimum dimensional variation in a EHA pump part and a TiN thin film coating by unbalanced magnetron sputtering was performed and the specimens with a duplex surface treatment were subjected to a high speed wear test to evaluate the wear performance of EHA hydraulic pump parts with various surface treatment conditions. Results indicated that uniform and continuous surface layer with a minimum dimensional variation could be obtained by ion nitriding with bipolar mode power source and much enhanced wear characteristics with a duplex surface treatment could be obtained, compared with results from ion nitriding or single-layerd TiN coating specimens.

• Bulletin of the Korean Chemical Society
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• v.24 no.8
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• pp.1163-1168
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• 2003

The structures of molecular species of galactolipids, such as monogalactosyl diacylglycerol (MGDG) and digalactosyl diacylglycerol (DGDG), isolated from wheat flour have been investigated using negative-ion electrospray ionization (ESI) mass spectrometry interfaced with high performance liquid chromatography (HPLC). According to the result of HPLC analysis, MGDG and DGDG were found to consist of mixtures of five and four molecular species, respectively. The galactolipids have been also analyzed to determine their fatty acid compositions, using HPLC/ESI-MS combined with in-source (or cone voltage) fragmentation. HPLC/ ESI-MS is very useful for one-step analysis of mixtures of galactolipids with a small sample quantity. Especially, the carboxylate anions produced in in-source fragmentations of the negative-ion of each component separated by HPLC provide valuable information on the composition of its fatty acyl chains.

• Journal of Information Display
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• v.8 no.1
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• pp.1-5
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• 2007

We have developed a CMOS LTPS process which requires only five photolithographic masks and only one ion doping step. Drain/Source areas of NMOS TFTs were formed by PECVD deposition of a highly doped precursor layer while PMOS contact areas were defined by ion implantation. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N and p-channel devices reached field effect mobilities of $173cm^2$/Vs and $47cm^2$/Vs, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.145-150
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• 2007

The $SiO_2$ and $TiO_2$ thin films for the multilayer interference filter application were manufactured by electron beam process. In case of electron beam process with ion source, the anode current was controlled by gas volume ratio of $O_2$ and Ar. Substrate temperature of electron beam deposition without ion source was increased from 100 to $250^{\circ}C$ with $50^{\circ}C$ increment. The surface roughness values of $SiO_2$ thin films was most low value at $200^{\circ}C$ substrate temperature and 0.2 A anode current respectively. And the surface roughness values of $TiO_2$ thin films was most low value at room temperature and 0.2 A anode current repectively. The refractive index of $SiO_2$ and $TiO_2$ thin films to be deposited with ion source was usually lower than that of thin films without ion source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.328-329
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• 2006

반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.