• Journal of the Korean Ceramic Society
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• v.15 no.2
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• pp.72-78
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• 1978

The vapor pressure of the high melting point oxides, MgO, $Cr_2O_3$, and $MgCr_2O_4$ were measured over the temperature range 1300 to 175$0^{\circ}C$ under vacuum <$10^{-5}$ torr by the Langmuir and the Knudsen method. The Langmuir vapor pressure was increased with elevating temperature and with increasing porosity of the specimen. The difference between the vapor preseures measured by the Langmuir and the Knudsen method was decreased with elevating temperature and the Langmuir vapor pressure finally reached the Knudsen vapor pressure at the melting point when extrapolated. The vapor pressure of other important oxides with high melting points, i.e., $Al_2O_3$, $ThO_2$, $Yb_2O_3$ and $Y_2O_3$ were cited from the references. The Langmuir and the Knudsen vapor pressure of these oxides also showed the same results, i.e., they showed the same value at their melting points.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.394-399
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• 2000

The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.315-320
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• 2020

Methylammonium lead iodide (MAPbI₃) thin films were grown at low temperatures on glass substrates via 3-zone chemical vapor deposition. Lead iodide (PbI₂) and lead bis (dipivaloylmethanate) [Pb(dpm)₂] precursors were used as lead sources. Due to the high sublimation temperature (~400℃) of the PbI₂ precursor, a low substrate temperature could not be constantly maintained. Therefore, MAPbI₃ thin films degraded into the PbI₂ phase. In contrast, for the Pb(dpm)₂ precursor, a substrate temperature of ~120℃ was maintained because the sublimation temperature of Pb(dpm)₂ is as low as 130℃ at a high vapor pressure. As a result, high-quality MAPbI₃ thin films were successfully grown on glass substrates using Pb(dpm)₂. The rms (root-mean-square) roughness of MAPbI₃ thin films formed from Pb(dpm)₂ was as low as ~19.2 nm, while it was ~22.7 nm for those formed using PbI₂. The grain size of the films formed from Pb(dpm)₂ was as large as approximately 350 nm.

• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.335-341
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• 2016

In this study, impurity effects on diffusive-convection flow fields by physical vapor transport under terrestrial and microgravity conditions were numerically analyzed for the mixture of $Hg_2Cl_2-I_2$ system. The numerical analysis provides the essence of diffusive-convection flow as well as heat and mass transfer in the vapor phase during the physical vapor transport through velocity vector flow fields, streamlines, temperature, and concentration profiles. The total molar fluxes at the crystal regions were found to be much more sensitive to both the gravitational acceleration and the partial pressure of component $I_2$ as an impurity. Our results showed that the solutal effect tended to stabilize the diffusive-convection flow with increasing the partial pressure of component $I_2$. Under microgravity conditions below $10^{-3}g_0$, the flow fields showed a one-dimensional parabolic flow structure indicating a diffusion-dominant mode. In other words, at the gravitational levels less than $10^{-3}g_0$, the effects of convection would be negligible.

• Proceedings of the KSME Conference
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• 2001.06e
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• pp.51-56
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• 2001

Vapor explosion is one of the most important problems encountered in severe accident management of nuclear power plants. In spite of many efforts, a lot of questions still remain for the fundamental understanding of vapor explosion phenomena. Therefore, KAERI launched a real material experiment called TROI using 20 kg of UO2 and ZrO2 to investigate the vapor explosion phenomena. In addition, a small-scale experiment with molten-tin/water system was performed to quantify the characteristics of vapor explosion and to understand the phenomenology of vapor explosion. A number of instruments were used to measure the physical change occurring during the vapor explosion. In this experiment, the vapor explosion generated by molten fuel water interaction is visualized using high speed camera and the pressure behavior accompanying the explosion is investigated.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.E3
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• pp.101-107
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• 2001

Source profiles were developed for a total of 45 volatile organic compounds (VOC) that can be emitted from gasoline evaporation. The gasoline samples of five major brands (for each season) were blended on the basis of the market share in Seoul area and analyzed by a GC-MS/FID system. In addition, we calculated gasoline evaporative compositions using the Raoult's law from the liquid gasoline compositions. The measured and estimated gasoline vapor compositions agree well each other. As a group, alkanes are the most abundant in the gasoline vapors profiles (77.4% on average), followed by alkenes (19.1%), and aromatics (1.7%). As a specie in gasoline vapor, i-pentane is the most abundant, followed by n-butane, n-pentane, i-butane, trans-and cis-2-butenes, 2-methyl-2-butene, and trans-and cis-2-pentenes . It was also seen that aromatic content was much lower in the vapor phase compositions. From the comparison between experimental and calculated compositions, we identified the fact that once the gasoline vapor composition is reliably constructed entirely from the measured gasoline composition and the Raoult's law calculations, the need for doing separate chemical analyses of the gasoline vapor can be reduced.

• Restorative Dentistry and Endodontics
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• v.10 no.1
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• pp.85-92
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• 1984

The aim of this study was to examine the influence of the speed of grinding and coolants on mercury vaporization during amalgam removal. Forty amalgam filled stone dies were stored at $37^{\circ}C$ and 100% relative humidity for 7 days prior to the beginning of the mercury vapor experiment and were divided into 4 different groups; In Group I; Used by high speed without coolant & evacuator during amalgam removal. In Group II; Used by high speed with coolant & evacuator during amalgam removal. In Group III; Used by low speed without coolant & evacuator during amalgam removal. In Group IV; Used by low speed with coolant & evacuator during amalgam removal. The amalgam specimens were removed in a 30-second time period and mercury vapor was collected with membrane filter at 27mm from the site of removal and 45 degree above there. Samples in Group II, IV were removed with coolant spray at a flow rate of 30 ml/min with high-velocity evacuator. Mercury vapor collected membrane filter was analysed by Atomic Absorption Spectrophotometer using cold vapor method. The results were as follows; 1. The mercury vapor levels were obtained all of the Groups. 2. The mercury vapor levels of the Group II, IV (with coolant & evacuator) were less than that of the Group I, III (without coolant & evacuator). 3. The highest mercury vapor level recorded during amalgam removal procedure was Group I (used by high speed without coolant & evacuator) and its record was $0.78{\pm}0.09\;mg/m^3$, which exceed the T.L.V. by 15 times. 4. The mercury vapor level of the Group IV (used by low speed with coolant & evacuator) was more than that of the Group II (used by high speed with coolant & evacuator), but its difference was not significant, statistically. (p > 0.05)

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.262-267
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• 2015

We demonstrate the growth of single-walled carbon nanotubes (SWNTs) using ethylene-based chemical vapor deposition (CVD) and ferritin-induced catalytic particles toward growth temperature reduction. We first optimized the gas composition of $H_2$ and $C_2H_4$ at 500 and 30 sccm, respectively. On a planar $SiO_2$ substrate, high density SWNTs were grown at a minimum temperature of $760^{\circ}C$. In the case of growth using nanoporous templates, many suspended SWNTs were also observed from the samples grown at $760^{\circ}C$; low values of $I_D/I_G$ in the Raman spectra were also obtained. This means that the temperature of $760^{\circ}C$ is sufficient for SWNT growth in ethylene-based CVD and that ethylene is more effective that methane for low temperature growth. Our results provide a recipe for low temperature growth of SWNT; such growth is crucial for SWNT-based applications.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.2
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• pp.151-158
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• 2010

In order to measure the deposition velocity of $I_2$ vapor for radish plants and its translocation factor for their roots, radish plants were exposed to $I_2$ vapor for 80 min. at different growth stages between 29 and 53 d after sowing. The exposure was performed in a transparent chamber during the morning time. Deposition velocities ($ms^{-1}$) were on the whole in the range of $1.0{\times}10^{-4}{\sim}2.0{\times}10^{-4}$ showing an increasing tendency with an increase in the biomass density. The results showed some agreement with existing reports that a higher relative humidity would lead to a higher deposition velocity. The acquired deposition velocities were lower than by factors of several tens than some field measurements probably due to a very low wind speed (about $0.2\;ms^{-1}$) in the chamber. Translocation factors (ratio of the total iodine in the roots at harvest to the total plant deposition), estimated in a more or less conservative way, were $1.3{\times}10^{-3}$ for an exposure at 29 d after sowing and $5.0{\times}10^{-3}$ for an exposure at 53 d after sowing. In using the present experimental data, meteorological conditions and chemical and physical forms of iodine need to be carefully considered.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.79-83
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• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.