• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.37-41
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$, $ZrO_2$, $HfO_3$ Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mefchanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({\times}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack (mc) and lateral crack (lc) under surface at the edge of indentation mark. Fracture toughness of $Al_2O_3$-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• Journal of IKEEE
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• v.25 no.4
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• pp.774-777
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• 2021

In this paper, we analyzed the gate controllability of 3D NAND Flash Memory with Charge Trap Flash using Ferroelectric (CTF-F) structure. HfO₂, a ferroelectric material, has a high-k characteristic besides polarization. Due to these characteristics, gate controllability is increased in CTF-F structure and on/off current characteristics are improved in Bit Line(BL). As a result of the simulation, in the CTF-F structure, the channel length of String Select Line(SSL) and Ground Select Line(GSL) was 100 nm, which was reduced by 33% compared to the conventional CTF structure, but almost the same off-current characteristics were confirmed. In addition, it was confirmed that the inversion layer was formed stronger in the channel during the program operation, and the current through the BL was increased by about 2 times.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.141-141
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• 2012

X-선 반사율 측정법(XRR)은 비파괴적인 측정방법과 수 nm의 두께를 정밀하게 측정할 수 있는 장점으로 인하여 반도체 산업현장에서 많은 관심과 연구가 이루어지고 있다. 이러한 XRR은 두께 분석 측정의 정밀도를 향상시키고 부정확한 결과를 방지하기 위하여 측정기기를 검증하고 보정할 수 있는 두께 표준물질을 필요로 하고 있다. 본 연구에서는 XRR용 두께 표준물질을 이온빔 스퍼터링 증착방법을 이용하여 제작하였다. 두께 표준물질 제작에 있어 공기 중 노출에 의해 산화가 되지 않는 산화물 박막과 산화물 기판을 선택하였다. 후보물질은 glass, sapphire, quartz, SiO2기판과 HfO2, Ta2O5, Cr2O3 산화물 타켓을 이용하여 박막을 제작하였다. 제작된 후 보물질은 교정된 XRR을 통하여 박막의 두께, 계면 및 표면 거칠기, 밀도등 박막의 구조특성분석을 하였다. Glass, quartz의 경우 기판 표면 거칠기가 좋지 않아 제작된 샘플의 X-선 반사율 곡선이 급격히 떨어지면서 측정되는 각도의 영역이 작아졌다. Sapphire로 제작한 시편은 측정된 데이터와 simulation의 curve fitting이 양호하지 않았다. 이 중 SiO2기판을 사용하고 HfO2박막을 증착한 샘플이 다른 후보물질보다 XRR curve fitting 결과가 가장 양호하여 두께 표준물질로 응용하기에 적절하였다. 그리고 AFM (Atomic Force MicroScope)을 이용하여 기판의 거칠기 및 증착한 박막표면 거칠기 측정을 하였고, TEM (Transmission Electron Microscope)으로 두께 측정을 하여 XRR로 얻은 데이터와 비교하였다. 이러한 결과를 토대로 XRR용 두께 표준물질 제작할 수 있었고, 추후 불확도 평가 및 비교실험을 통하여 제작된 XRR용 두께 표준물질을 이용할 수 있을 것으로 기대된다.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.379-384
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• 1994

Room-temperature photoluminescent porous Si has been formed by etching Si wafer u-ith the solution of $HF:HNO_{3}: H_{2}O$=l : 5 : 10. We have observed photoluminescence(PL) spectra similar to those reported recently for porous-Si films formed by anodic etching with HF solutions. We have also investigated the dependence of PI, spectra on the etching time which was varied from 1 to 10 minutes. We found that 5-minute etching gave us the strongest PL intensity. We also found by atomic force microscopy( AFM) measurements that the surface fearure size became smaller for longer etching time and the average feature size of the etched Si wafer for 5-minute was about 1, 500~2, 000$\AA$. This indicates that the surface feature of the etched porous Si affects the PL intensity of the sample.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.14.2-14.2
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• 2007

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.641-644
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• 1995

We have studied the effect of the nitrogen on the microstructure, thermomagnetic properties and corrosion resistance of Fe-Hf-C-N nanocrystalline thin films with high permeability and high saturation magnetization. These films were fabricated by reactive sputtering in $Ar+N_{2}$ plasma using an rf magnetron sputtering apparatus. As $P_{N2}$ increases, the microstructure changes from amorphous to crystalline $\alpha$-Fe phase and again returns to amorphous one. Spin wave stiffness constant increases with $P_{N2}$ until 5% $P_{N2}$, and then decreases with the further increase. This trend corresponds well with that of the microstructure with increasing $P_{N2}$. The Fe-Hf-C-N films with over 3% $P_{N2}$ show higher corrosion resistance than the N-free Fe-Hf-C films. The Fe-Hf-C-N films are considered to have high potentials for the head core materials suitable for high density recording systems, owing to their excellent soft magnetic properties and corrosion resistance.

• Journal of the Korean Chemical Society
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• v.22 no.6
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• pp.357-364
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• 1978

The dipole moments for $NH_3$, HF, CO, HCHO, HCN, PO, $PO^-\;and\;H_2O$ molecules are calculated, using the method for evaluation of the dipole moment matrix elements by the expansion method for spherical harmonics. The calculated dipole moments in this work are closer to the experimental values than those of the other work.

• Journal of Adhesion and Interface
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• v.21 no.4
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• pp.143-155
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• 2020

Hydrophobic Organic-Inorganic (O-I) hybrid materials prepared by sol-gel process have been widely used at functional coating fields such as coatings for anti-corrosion, anti-icing, self-cleaning, anti-reflection. The key point for fabricating hydrophobic surface is to optimize the surface energy and roughness of the coating films. There are typical processes to control the surface energy and roughness which are 'In situ fabricating', 'Pre-fluorinating/Post-roughening', 'Pre-roughening/ Post-fluorinating'. In this study, particle-binder process was used for in-situ fabrication of hydrophobic coating films. Various O-I hybrid compounds prepared using several kinds of alkoxysilane compounds were used as a binder for silica nanoparticles at particle-binder process. To study effect of fluorine content and weight ratio of particle : binder on the hydrophobicity and surface morphology, Hydrophobic coating films were prepared onto glass substrate at various content of fluorine content of O-I hybrid binder and weight ratio of particle : binder. The coating films prepared using O-I hybrid binder (GPTi-HF10) having 10 wt% of fluorine content showed the highes water contact angle (107.52±1.6°). The coating films prepared at 1:3 weight ratio of GPTi-HF10 : silica nanoparticle exhibited the highest water contact angle (130.84±1.99°).

• Resources Recycling
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• v.17 no.5
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• pp.3-10
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• 2008

We researched recycle of mixed waste acids including HF, $CH_{3}COOH$, $HNO_3$ produced during semiconductor wafer process. At first, we recovered HF in form of $Na_{2}SiF_6$ by precipitation using $NaNO_3$ and $Na_{2}SiO_3$. Concentration of HF was made down from 110 g/L, initial concectration, to 0.5 g/L and Recovery rate of HF was 99.5%. After recovery of HF, concentration of $HNO_3$ and $CH_{3}COOH$ is 498 g/L, 265 g/L respectively. From that mixed acid, we recovered $CH_{3}COOH$ using 2 stages of fractional distillation. In first stage, $CH_{3}COOH$ was distilled for separation from $HNO_3$. And in second stage, we recoverd refined $CH_{3}COOH$ by using fractional distillation for removing a little amount of $HNO_3$ in $CH_{3}COOH$ vapor. The concentration of recovered $CH_{3}COOH$ in second stage is 20% and finally recovery rate of $CH_{3}COOH$ is about 87.5%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.116-116
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$ film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer.