• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.284-284
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• 2011

Ion sensitive field effect transistor (ISFET)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 metal oxide semiconductor field effect transistor (MOSFET)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액의 수소이온이 막의 표면에 속박되어 표면전위의 변화를 유발하는 것에 기인한다. 그 결과, 수소이온의 농도에 따라 ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. 한편, ISFET의 좋은 pH감지특성과 높은 출력특성을 얻기 위하여 high-k물질들이 감지막으로써 지속적으로 연구되어져 왔다. 그 중 Al2O3와 HfO2는 높은 유전상수와 좋은 pH 감지능력으로 인하여 많은 연구가 이루어져온 물질이다. 하지만 HfO2는 높은 유전상수를 갖음에도 불구하고 화학용액에 대한 non-ideal 효과에 취약하다는 보고가 있다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 본 연구에서는, 이러한 각각의 high-k 물질들의 단점을 보안하기 위하여 SiO2/HfO2/Al2O3(OHA) 적층막을 이용한 ISFET pH 센서를 제작하였으며 SOI 기판에서 구현되었다. SOI기판에서 OHA 적층막을 이용한 ISFET 제작이 이루어짐에 따라서 소자의 signal to noise 비율을 증대 시킬것으로 기대된다. 실제로 SOI-ISFET와 같이 제작된 SOI-MOSFET는 1.8${\times}$1010의 높은 on/off 전류 비율을을 보였으며 65 mV/dec의 subthreshold swing 값을 갖음으로써, 우수한 전기적 특성을 보이는 ISFET가 제작이 되었음을 확인 하였다. OHA 감지 적층막의 각 층은 양호한 계면상태, 높은 출력특성, 화학용액에 대한non-ideal 효과에 강한 immunity을 위하여 적층되었다. 결론적으로 SOI과 OHA 적층감지막을 이용하여 우수한 pH 감지 특성을 보이는 pH 센서가 제작되었다.

• Journal of the Korean Magnetics Society
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• 제5권1호
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• pp.64-70
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• 1995

The authors have studied crystallographic and magrletic properties of $NdFe_{10.7}TiM_{0.3}(M=B,\;Ti)$ by X-ray diffraction, VSM magnetometer, and Mossbauer spectrometer. The Alloys were prepared by arc-melting under argon atmosphere. The $NdFe_{10.7}TiM_{0.3}$ has pure single phase, whereas the $NdFe_{10.7}Ti_{1.3}$ contains some $\alpha-Fe$, from powder X-ray diffractometry. The $NdFe_{10.7}TiM_{0.3}$ has the $ThMn_{12}$-type tetragonal structure with $a_{0}=8.587\;{\AA}\;and\;c_{0}=4.788\;{\AA}$. The Curie temperature ($T_c$) is $570{\pm}3\;K$ from $M\"{o}ssbauer$ spectroscopy performed at various temperatures ranging from 13 to 770 K. Each spectrum of below $T_c$ was fitted with five subspectra of Fe sites in the structure ($8i_{1},\;8i_{2},\;8j_{1},\;8j_{2}\;and\;8f$). The area fraction of the subspectra at room temperature are 16.4, 8.2, 14.8, 21.3 and 39.3 %, respectively. Magenetic hyperfine fields for the Fe sites decrease in the order, $H_{hf}(8i)>H_{hf}(8j)>H_{hf}(8f)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.7-8
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• 2008

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.76-82
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• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• Journal of the Korean Ceramic Society
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• 제48권1호
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• pp.80-85
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• 2011

The crystallization behavior and microstructural change of the glass-ceramics were analyzed as a function of concentration and etching time of the HF solution in order to enhance the degree of crystallinity induced by heterogeneous nucleation of glass of bottom ash containing 15 wt% $Li_2O$. The nucleation site seemed to be generated where the Si ion was eluted. The main crystal phases in the glass-ceramics fabricated in this study were $\beta$-spodumene and $Li_2SiO_3$. The specimens etched with HF of 0.5 vol% within 0~60 seconds showed increased crystalline peak intensities in XRD pattern with etching time compared to no-etched one. Also the crystal size and crystal occupancy in the glass matrix observed by SEM were increased with etching time. For the glass-ceramics etched with 1.0 and 2.0 vol% HF solution, the etching time over 10 s was not effective to increase the crystallinity. From this study, it was found that the glass-ceramics with the higher crystallinity could be obtained by HF-etching followed by heat treatment process, even though the nucleating agent or 2-stages thermal treatment process were not used.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.191-192
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• 2010

높은 유전상수를 가지는 터널 장벽물질 들은 플래쉬메모리 및 나노 부유게이트 메모리 소자에서 터널의 두께 및 밴드갭 구조의 변형을 통하여 단일층의 $SiO_2$ 터널장벽에 비하여 동작속도를 향상시키고 누설전류를 줄이며 전하보존 특성을 높여줄 수 있다.[1-3] 본 연구에서는 $Al_2O_3/HfO/Al_2O_3$구조의 고 유전체 터널장벽을 사용하여 $WSi_2$ 나노입자를 가지게 되는 metal-oxide-semiconductor(MOS)구조의 커패시터를 제작하여 전기적인 특성을 확인하였다. p형 (100) Si기판 위에 $Al_2O_3/HfO/Al_2O_3$ (AHA)의 터널장벽구조를 원자층 단일 증착법을 이용하여 $350^{\circ}C$에서 각각 2 nm/1 nm/3 nm 두께로 증착시킨 다음, $WSi_2$ 나노입자를 제작하기 위하여 얇은 $WSi_2$ 박막을 마그네트론 스퍼터링법으로 3 - 4 nm의 두께로 증착시켰다. 그 후 $N_2$분위기에서 급속열처리 장치로 $900^{\circ}C$에서 1분간의 열처리과정을 통하여 AHA로 이루어진 터널 장벽위에 $WSi_2$ 나노입자들이 형성할 수 있었다. 그리고 초 고진공 마그네트론 스퍼터링장치로 $SiO_2$ 컨트롤 절연막을 20 nm 증착하고, 마지막으로 열 증기로 200 nm의 알루미늄 게이트 전극을 증착하여 소자를 완성하였다. 그림 1은 AHA 터널장벽을 이용한 $WSi_2$ 나노 부유게이트 커패시터 구조의 1-MHz 전기용량-전압 특성을 보여준다. 여기서, ${\pm}3\;V$에서 ${\pm}9\;V$까지 게이트전압을 점차적으로 증가시켰을 때 메모리창은 최대 4.6 V로 나타났다. 따라서 AHA의 고 유전체 터널층을 가지는 $WSi_2$ 나노입자 커패시터 구조가 차세대 비 휘발성 메모리로서 충분히 사용가능함을 보였다.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.12-15
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• 2008

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.119-119
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• 2016

Over the last years the anodic formation of ordered $TiO_2$ nanotube layers has created significant scientific interest. Titanium oxide nanotube formation on the titanium or titanium alloy surface is expected to be important to improve cell adhesion and proliferation under clinical conditions. It should be possible to control the nanotube size and morphology for biomedical implant use by controlling the applied voltage, alloying element, current density, anodization time, and electrolyte. $TiO_2$ nanotubes show excellent biocompatibility, and the open volume in the tubes may be exploited as a drug release platform and so on. Therefore, in this study, Nanotube shape on the Ti-29Nb-xHf alloys with applied potentials was reserched. $TiO_2$ nanotube formation on Ti-29Nb-xHf alloys was carried out using anodization technique as a function of applied DC potential (10 V to 30 V and 30 V to 10 V) and anodization time for 60~120 min in $1MH_3PO_4$ with small additions of (0.8 wt. %, to 1.2 wt. %) NaF. The morphology change of anodized Ti-29Nb-xHf alloys was determined by FE-SEM, XRD, and EDS.

• Journal of the Korean Vacuum Society
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• 제9권3호
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• pp.249-253
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• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.340-341
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• 2012

In this work, we investigated the effects of temperature stress on flatband voltage (VFB) shifts of HfO2-SiO2 double gate dielectrics devices. Fig. 1 shows a high frequency C-V of the device when a positive bias for 10 min and a subsequent negative bias for 10 min were applied at room temperature (300 K). Fig. 2 shows the corresponding plot when the same positive and negative biases were applied at a higher temperature (473.15 K). These measurements are based on the BTS (bias temperature stress) about mobile charge in the gate oxides. These results indicate that the positive bias stress makes no difference, whereas the negative bias stress produces a significant difference; that is, the VFB value increased from ${\Delta}0.51$ V (300 K, Fig. 1) to ${\Delta}14.45$ V (473.15 K, Fig. 2). To explain these differences, we propose a mechanism on the basis of oxygen vacancy in HfO2. It is well-known that the oxygen vacancy in the p-type MOS-Cap is located within 1 eV below the bottom of the HfO2 conduction band (Fig. 3). In addition, this oxygen vacancy can easily trap the electron. When heated at 473.15 K, the electron is excited to a higher energy level from the original level (Fig. 4). As a result, the electron has sufficient energy to readily cross over the oxide barrier. The probability of trap about oxygen vacancy becomes very higher at 473.15 K, and therefore the VFB shift value becomes considerably larger.