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http://dx.doi.org/10.4313/TEEM.2008.9.1.012

Influence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films  

Choi, Dae-Han (School of Materials Science and Engineering, University of Ulsan)
Choi, Jong-In (School of Materials Science and Engineering, University of Ulsan)
Park, Hwan-Jin (School of Materials Science and Engineering, University of Ulsan)
Chae, Joo-Hyun (School of Materials Science and Engineering, University of Ulsan)
Kim, Dae-Il (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.1, 2008 , pp. 12-15 More about this Journal
Abstract
Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.
Keywords
Hafnium oxynitride; Nitrogen; Reactive sputtering; XRD; XRR;
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