References
- M. R. Visokay, J. J. Chambers, A. L. P. Rotonraro, A. Shanware, and L. Colpmbo, "Application of HfSiON as a gate dielectric material", Appl. Phys. Lett., Vol. 80, p. 3183, 2002 https://doi.org/10.1063/1.1476397
-
M. Modreanu, J. S. Parramon, D. Oconnell. J. Justice, O. Durand, and B. Servet, "Solid phase crystallisation of
$HfO_2$ thin films", Mat. Sci. Eng. B, Vol. 118, p. 127, 2005 https://doi.org/10.1016/j.mseb.2004.12.068 -
J. Kim, K. Choi, and S. Yoon, "Electrical and reliability characteristics of
$HfO_2$ gate dielectric treated in$N_2$ and$NH_3$ plasma atmosphere", Appl. Surf. Sci., Vol. 242, p. 313, 2005 https://doi.org/10.1016/j.apsusc.2004.08.026 -
M. Liu, Q. Fang, G. He, L. Q. Zhu, and L. D. Zhang, "Characterization of
$HfO_xN_y$ gate dielectrics using a hafnium oxide as target", Appl. Surf. Sci., Vol. 252, p. 8673, 2006 https://doi.org/10.1016/j.apsusc.2005.12.003 - M. Lee, Z. Lu, W. T. Ng, D. Landheer, X. Wu, and S. Moisa, "Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO", Appl. Phys. Lett., Vol. 83, p. 2638, 2003 https://doi.org/10.1063/1.1608488
- S. Venkataraj, D. Severin, S. H. Mohamed, J. Ngaruiya, O. Kappertz, and M. Wuttig, "Towards understanding the superior properties of transition metal oxynitrides prepared by reactive DC magnetron sputtering", Thin Solid Films, Vol. 502, p. 228, 2006 https://doi.org/10.1016/j.tsf.2005.07.280
- K. Y. Tong, E. V. Jelenkovic, W. Liu, and J. Y. Dai, "Nitridation of hafnium oxide by reactive sputtering", Microelectron. Eng., Vol. 83, p. 293, 2006 https://doi.org/10.1016/j.mee.2005.09.001