Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films

  • Choi, Dae-Han (School of Materials Science and Engineering, University of Ulsan) ;
  • Choi, Jong-In (School of Materials Science and Engineering, University of Ulsan) ;
  • Park, Hwan-Jin (School of Materials Science and Engineering, University of Ulsan) ;
  • Chae, Joo-Hyun (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Dae-Il (School of Materials Science and Engineering, University of Ulsan)
  • Published : 2008.02.29
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Abstract

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

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References

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