• Title/Summary/Keyword: $HfAlO_3$

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Engineered Tunnel Barrier Ploy-TFT Memory for System on Panel

  • Yu, Hui-Uk;Lee, Yeong-Hui;Jeong, Hong-Bae;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.128-128
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    • 2011
  • Polysilicon thin-film transistors (poly-Si TFTs)는 능동행렬 액정 표시 소자(AMLCD : Active Matrix Liquid Crystal Display)와 DRAM과 같은 메모리 분야에 폭넓게 적용이 가능하기 때문에 많은 연구가 진행되고 있다. 최근 poly-Si TFTs의 우수한 특성으로 인하여 주변 driving circuits에 직접화가 가능하게 되었다. 또한 디스플레이 LCD 패널에 controller와 메모리와 같은 다 기능의 장치을 직접화 하여 비용의 절감과 소자의 소형화가 가능한 SOP (System on panels)에 연구 또한 진행 되고 있다. 이미 잘 알려진 바와 같이 비휘발성 메모리는 낮은 소비전력과 비휘발성이라는 특성 때문에 이동식 디바이스에 데이터 저장 장치로 많이 사용되고 있다. 하지만 플로팅 타입의 비휘발성 메모리는 제작공정의 문제로 인하여 SOP의 적용에 어려움을 가지고 있다. SONOS 타입의 메모리는 빠른 쓰기/지우기 효율과 긴 데이터 유지 특성을 가지고 있으나 소자의 스케일링 따른 누설전류의 증가와 10년의 데이터 보존 특성을 만족 시킬 수 가 없는 문제가 발생한다. 본 연구에서는 SOP 적용을 위하여 ELA 방법을 통하여 결정화한 poly-Si TFT memory를 SiO2/Si3N4/SiO2 Tunnel barrier와 High-k HfO2과 Al2O3을 Trapping layer와 Blocking layer로 적용, 비휘발성 메모리을 제작하여 전기적 특성을 알아보았다.

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Geochemical Study on Geological Groups of Stream Sediments in the Gwangju Area (광주지역 하상퇴적물에 대한 지질집단별 지구화학적 연구)

  • Kim, Jong-Kyun;Park, Yeung-Seog
    • Economic and Environmental Geology
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    • v.38 no.4 s.173
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    • pp.481-492
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    • 2005
  • The purpose of this study is to determine geochemical characteristics for stream sediments in the Gwangju area. We collect the stream sediments samples by wet sieving along the primary channels and dry these samples slowly in the laboratory and grind to under 200mesh using an alumina mortar fur chemical analysis. Major elements, trace and rare earth elements are determined by XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on geological groups of stream sediments, we separate geologic groups which are derived from Precambrian granite gneiss area, Jurassic granite area and Cretaceous Hwasun andesite area. Contents range of major elements for stream sediments in the Gwangju area are $SiO_2\;51.89\~70.63\;wt.\%,\;Al_2O-3\;12.91\~21.95\;wt.\%,\;Fe_2O_3\;3.22\~9.89\;wt.\%,\;K_2O\;1.85\~4.49\;wt.\%,\;MgO\;0.68\~2.90\;wt.\%,\;Na_2O\;0.48\~2.34\;wt.\%,\;CaO\;0.42\~6.72\;wt.\%,\;TiO_2\;0.53\~l.32\;wt.\%,\;P_2O_5\;0.06\~0.51\;wt.\%\;and\;MnO\;0.05\~0.69\;wt.\%.$ According to the AMF diagram for stream sediments and rocks, the stream sediments are plotted on boundary of tholeiitic series and calk alkaline series, which shows that contents of $Fe_2O_3$ are higher in stream sediments than rocks. According to variation diagram of $SiO_2$ versus $(K_2O+Na_2O),$ stream sediments are plotted on subalkaline series. Contents range of trace and rare earth elements for stream sediments in the Gwangiu area are Ba$590\~2170$ppm, Be1\~2.4$ppm, Cu$13\~79$ppm, Nb$20\~34$ppm, Ni$10\~50$ppm, Pb$17\~30$ppm, Sr$70\~1025$ ppm, V$42\~135$ppm, Zr$45\~171$ppm, Li$19\~77$ppm, Co$4.3\~19.3$ppm, Cr$28\~131$ppm, Cs$3.1\~17.6$ppm, Hf$5\~27.6$ppm, Rb$388\~202$ppm, Sb$0.2\~l.2$ ppm, Sc$6.4\~17$ppm, Zn$47\~389$ppm, Pa$8.8\~68.8$ppm, Ce$62\~272$ppm, Eu$1\~2.7$ppm and Yb$0.9\~6$ppm.

박막 태양전지 응용을 위하여 유리 습식 식각을 이용하여 Multi-Scale Architecture의 haze 효과

  • Oh, Donghyun;Jeon, Minhan;Kang, Jiwoon;Shim, Gyeongbae;Cho, Jaehyun;Park, Cheolmin;Kim, Hyunhoo;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.161.1-161.1
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    • 2016
  • 박막 태양전지의 광 산란을 위한 텍스쳐 된 표면은 반사 손실을 감소시키기 위한 것이다. 그러나, 투명한 전극(TCO)의 텍스쳐 된 표면은 빛의 가용성을 제한하고, 장파장 영역에서 haze의 수치를 감소시키며, 전반사의 증가는 박막 태양전지의 Jsc를 감소시킨다. 본 논문에서는 높은 빛의 가용성을 위하여 HF+HCl 혼합용액을 이용하여 표면의 질을 향상시키기 위한 해결책을 제시했다. 같은 HF+HCl 혼합용액을 사용하여, 540 nm의 파장에서 약 85 %의 높은 haze 수치를 달성했으며, ZnO:Al 막의 증착 후에 식각된 유리 기판과 함께 비교했을 때, 2.3%의 haze 수치의 감소를 얻었다. 또, 깊은 습식 식각에 의하여 Haze 수치를 증가시키기 위한 메커니즘 간단히 설명했다. 텍스쳐 된 유리 기판의 haze 수치의 측면에서 광학 이득은 일반적인 Asahi FTO 유리(${\lambda}=540nm$의 13.5%)에 비해 상당히 높다. 이러한 높은 haze 수치의 AZO 박막은 박막 태양전지의 Jsc를 개선하는데 이용할 수 있다.

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Electrical characteristic of insulator in tunnel-harrier memory using high-k (High-k를 이용한 터널베리어 메모리의 절연막 특성 평가)

  • Oh, Se-Man;Jung, Myung-Ho;Park, Gun-Ho;Kim, Kwan-Su;Jo, Young-Hun;Jung, Jong-Wan;Jung, Hong-Bea;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.262-263
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    • 2008
  • The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.

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Effect of pre-treatment of AZ91 Mg alloy in HF solution on PEO film formation behavior (AZ91 마그네슘 합금의 PEO 피막 형성거동에 미치는 HF전처리의 영향)

  • Kwon, Duyoung;Song, Pung-Keun;Moon, Sungmo
    • Journal of the Korean institute of surface engineering
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    • v.54 no.4
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    • pp.184-193
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    • 2021
  • This study demonstrates formation behavior and morphological changes of PEO (Plasma Electrolytic Oxidation) films on AZ91 Mg alloy as a function of pre-treatment time in 1 M HF solution at 25 ± 1 ℃. The electrochemical behavior and morphological changes of AZ91 Mg alloy in the pre-treatment solution were also investigated with pre-treatment time. The PEO films were formed on the pre-treated AZ91 Mg alloy specimen by the application of anodic current 100 mA/cm2 of 300 Hz AC in 0.1 M NaOH + 0.4 M Na2SiO3 solution. Vigorous generation of hydrogen bubbles were observed upon immersion in the pre-treatment solution and its generation rate decreased with immersion time. It was also found that 𝛽-Mg17Al12 in AZ91 Mg alloy was dissolved and a protective thin film of MgF2 was formed on the AZ91 Mg alloy surface during the pre-treatment process in the 1 M HF solution. PEO film did not grow on the AZ91 Mg alloy specimen when the surface was not pre-treated and irregular PEO films with nodular defects were formed for the specimens pre-treated up to 1 min. Uniform PEO films were formed when the AZ91 Mg alloy specimen was pre-treated more than 3 min. The growth rate of PEO films on AZ91 Mg alloy increased significantly with increasing pre-treatment time.

Catalytic Cracking of Triphenylmethane on Alumina Mixed with Mordenite Formed Secondary Pore (2차세공이 형성된 모더나이트와 알루미나를 혼합한 촉매상에서 Triphenylmethane의 분해반응)

  • Lee, Kyong-Hwan;Choi, Jun-Woo;Ha, Baik-Hyon
    • Applied Chemistry for Engineering
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    • v.8 no.6
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    • pp.1048-1053
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    • 1997
  • Modified mordenites by HF treatement, which have different $SiO_2/Al_2O_3$ ratio, and those mixed with $\gamma$-alumina are prepared and used for catalytic cracking of triphenylmethane(TPM) in micro-activity tester(MAT). Dealumination of mordenites decreased the acid content but developed secondary mesopores. The conversion and the selectivity of benzene over modified mordenites with the mesopores were increased. However, for the further dealuminated mordenites, they decreased due to the destruction of pore structure and low acid amount. Accordingly, the maximum cracking activity and the maximum selectivity of benzene were obtained about 17 $SiO_2/Al_2O_3$ ratio of modified mordenites. The modified mordenites mixed with alumina enhanced the cracking activity of TPM compared with the pure mordenites. It can be explained that TPM is cracked at active sites with in large pores of alumina firstly and further cracked into small molecules in zeolite pores as step mechanism of catalytic cracking.

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Study on Aluminum Frame Surface Cleaning Process for Photomask Pellicle Fabrication (포토마스크 펠리클 제조를 위한 Aluminum Frame 표면 세정공정 연구)

  • Kim, Hyun-Tae;Kim, Hyang-Ran;Kim, Min-Su;Lee, Jun;Jang, Sung-Hae;Choi, In-Chan;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.25 no.9
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    • pp.462-467
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    • 2015
  • Pellicle is defined as a thin transparent film stretched over an aluminum (Al) frame that is glued on one side of a photomask. As semiconductor devices are pursuing higher levels of integration and higher resolution patterns, the cleaning of the Al flame surface is becoming a critical step because the contaminants on the Al flame can cause lithography exposure defects on the wafers. In order to remove these contaminants from the Al frame, a highly concentrated nitric acid ($HNO_3$) solution is used. However, it is difficult to fully remove them, which results in an increase in the Al surface roughness. In this paper, the pellicle frame cleaning is investigated using various cleaning solutions. When the mixture of sulfuric acid ($H_2SO_4$), hydrofluoric acid (HF), hydrogen peroxide ($H_2O_2$), and deionized water with ultrasonic is used, a high cleaning efficiency is achieved without $HNO_3$. Thus, this cleaning process is suitable for Al frame cleaning and it can also reduce the use of chemicals.

The Geochemical and Zircon Trace Element Characteristics of A-type Granitoids in Boziguoer, Baicheng County, Xinjiang (중국 신장 위그루자치구 바이청현 보즈구얼의 A형화강암류의 지화학 및 지르콘 미량원소특징에 대한 연구)

  • Yin, Jingwu;Liu, Chunhua;Park, Jung Hyun;Shao, Xingkun;Yang, Haitao;Xu, Haiming;Wang, Jun
    • Economic and Environmental Geology
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    • v.46 no.2
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    • pp.179-198
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    • 2013
  • The Boziguoer A-type granitoids in Baicheng County, Xinjiang, belong to the northern margin of the Tarim platform as well as the neighboring EW-oriented alkaline intrusive rocks. The rocks comprise an aegirine or arfvedsonite quartz alkali feldspar syenite, an aegirine or arfvedsonite alkali feldspar granite, and a biotite alkali feldspar syenite. The major rock-forming minerals are albite, K-feldspar, quartz, arfvedsonite, aegirine, and siderophyllite. The accessory minerals are mainly zircon, pyrochlore, thorite, fluorite, monazite, bastnaesite, xenotime, and astrophyllite. The chemical composition of the alkaline granitoids show that $SiO_2$ varies from 64.55% to 72.29% with a mean value of 67.32%, $Na_2O+K_2O$ is high (9.85~11.87%) with a mean of 11.14%, $K_2O$ is 2.39%~5.47% (mean = 4.73%), the $K_2O/Na_2O$ ratios are 0.31~0.96, $Al_2O_3$ ranges from 12.58% to 15.44%, and total $FeO^T$ is between 2.35% and 5.65%. CaO, MgO, MnO, and $TiO_2$ are low. The REE content is high and the total ${\sum}REE$ is $(263{\sim}1219){\times}10^{-6}$ (mean = $776{\times}10^{-6}$), showing LREE enrichment HREE depletion with strong negative Eu anomalies. In addition, the chondrite-normalized REE patterns of the alkaline granitoids belong to the "seagull" pattern of the right-type. The Zr content is $(113{\sim}1246){\times}10^{-6}$ (mean = $594{\times}10^{-6}$), Zr+Nb+Ce+Y is between $(478{\sim}2203){\times}10^{-6}$ with a mean of $1362{\times}10^{-6}$. Furthermore, the alkaline granitoids have high HFSE (Ga, Nb, Ta, Zr, and Hf) content and low LILE (Ba, K, and Sr) content. The Nb/Ta ratio varies from 7.23 to 32.59 (mean = 16.59) and the Zr/Hf ratio is 16.69~58.04 (mean = 36.80). The zircons are depleted in LREE and enriched in HREE. The chondrite-normalized REE patterns of the zircons are of the "seagull" pattern of the left-inclined type with strong negative Eu anomaly and without a Ce anomaly. The Boziguoer A-type granitoids share similar features with A1-type granites. The average temperature of the granitic magma was estimated at $832{\sim}839^{\circ}C$. The Boziguoer A-type granitoids show crust-mantle mixing and may have formed in an anorogenic intraplate tectonic setting under high-temperature, anhydrous, and low oxygen fugacity conditions.

Mössbauer Study of Al0.2CoFe1.8O4 Ferrite Powders (Mössbauer 분광법에 의한 Al0.2CoFe1.8O4분말의 자기적 특성 연구)

  • Chae, Kwang-Pyo;Lee, Jae-Gwang;Kweon, Hyuck-Su;Lee, Young-Bae
    • Journal of the Korean Magnetics Society
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    • v.13 no.6
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    • pp.231-236
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    • 2003
  • The $Al_{0.2}$CoF $e_{1.8}$ $O_4$ferrite powders have been prepared by the sol-gel method. The crystallographic and magnetic properties of the sample depending on annealing temperature have been investigated by means of x-ray diffraction, FE SEM, Mossbauer spetroscopy and vibrating sample magnetometry. The x-ray diffractions of all samples annealing temperature above 873 K clearly indicate the presence of spinel structure, the lattice constant decrease from 8.425 $\AA$ at 873 K to 8.321 $\AA$ at 1073 K, whereas the particle size rapidly increase from about 39 nm at 673 K to about 108 nm at 1073 K. The Mossbauer spectra annealed above 873 K could be fitted as the superposition of two sextets due to F $e^{3+}$ at A-site and B-site. The isomer shift (IS) and quadruple splitting (QS) values nearly constant with annealing temperature, whereas magnetic hyperfine field ( $H_{hf}$) of A-site slowly in crease and that of B-site fastly increases with increasing annealing temperature. The magnetic behaviour of powders shows that the saturation magnetization increase from 0.7 emu/g at 473 K to 72.1 emu/g at 1073 K while the coercivity decrease from 0.951 kOe at 673 K to 0.374 kOe at 1073 K with increasing annealing temperature.

Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications (바이오 센서 적용을 위한 수직형 이중게이트 InGaAs TFET의 게이트 열화 현상 분석)

  • Baek, Ji-Min;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.31 no.1
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    • pp.41-44
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    • 2022
  • In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al2O3/HfO2 = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 103 at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.