• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.34-39
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• 1995

Various silicon films were prepared by thermal- and UV photo-CVD processes. The reactants were SiH4, Si2H6, SiH2F2, SIF4, and H2. Silicon films grown at temperatures below $500 ^{\circ}C$ were either amorphous or crystalline depending on the process conditions, and the growth rates ranged between 5 and $80\AA$min. Crystallinity of the film was improved even at $250^{\circ}C$ when the film was grown by photo-CVD using fluoro-silanes as the reactants. Analysis of the film by RBS, SIMS, XRD, and ex-situ IR indicated that substrate surface was contaminated by oxygen and other impurities when the reactants contained neither hydrogen nor fluoro-silnanes, but when fluoro-silanes were used as reactants the silicon film was highly crystalline.

• Journal of the Korea Concrete Institute
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• v.18 no.1 s.91
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• pp.57-64
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• 2006

The crack presented in concrete structures causes a structural defect, the durability decrease, and external damages etc. Therefore, it is necessary to improve durability through the effort to control the crack. Fluosilicic acid($H_2SiF_6$) is recovered as aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded $H_3PO_4$ or HF. Generally, fluosilicates prepared by the reaction between $H_2SiF_6$ and metal salts. Addition of fluosilicates to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. Mix proportions for experiment were modulated at 0.45 of water to cement ratio and $0.0{\sim}2.0%$ of adding ratio of fluosilicate salt based inorganic compound. To evaluate correlation of concrete strength and adding ratio of fluosilicate salt based inorganic compound, the tests were performed about design strength(21, 24, 27 MPa) with 0.5% of adding ratio of fluosilicate salt based inorganic compound. Applications of fluosilicate salt based inorganic compound to reduce cracks resulted from plastic and drying shrinkage, to improve durability are presented in this paper. Durability was evaluated as neutralization, chloride ion penetration depth, freezing thawing resistant tests and weight loss according reinforcement corrosion. It is ascertained that the concrete added fluosilicate salt based inorganic compound showed m ability to reduce the total area and maximum crack width significantly as compared non-added concrete. In addition, the durability of concrete improved because of resistance to crack and watertightness by packing role of fluosilicate salt based inorganic compound obtained and pozzolanic reaction of soluble $SiO_2$ than non-added concrete.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.287-293
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• 2009

The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.371-377
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• 2003

We perform the physical analysis such that Si/W composition ratios and phosphorus distribution change in the W/S $i_{x}$ thin films according to phosphorus concentration of polysilicon and W $F_{6}$ flow rate for the formation of WS $i_{x}$ polycide used as a gate electrode. We report that these physical characteristics have effects on the contact resistance between word line and bit line in DRAM devices. RBS measurements show that for the samples having phosphorus concentrations of 4.75 and 6.0${\times}$10$^{2-}$ atoms/㎤ in polysilicon, by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, Si/W composition ratio has increases to 2.05∼2.24 and 2.01∼2.19, respectively. SIMS analysis give that phosphorus concentration of polysilicon for both samples have decreases after annealing, but phosphorus concentration of WS $i_{x}$ thin film has increases by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm. The contact resistance between word line and bit line in the sample with phosphorus concentration of 6.0 ${\times}$ 10$^{20}$ atoms/㎤ in polysilicon is lower than the sample with 4.75 ${\times}$ 10$^{20}$ atoms/㎤ After applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, the contact resistance has been improved dramatically from 10.1 to 2.3 $\mu$ $\Omega$-$\textrm{cm}^2$.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.149-153
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• 2001

Three-dimensional thermoluminescence(TL) spectra of LiF: Mg, Cu, Na, Si TL material based on temperature, wavelength and intensity were measured and analyzed. The glow curves were obtained by integration of luminescence intensity for wavelength at each temperature, and various trapping parameters related to the trap formation were determined by analyzing these curves. Computerized glow curve deconvolution(CGCD) method which based on general order kinetics(GOK) model were used for the glow curve analysis. The glow curves of LiF:Mg, Cu, Na, Si TL material were deconvoluted to six isolated glow curves which have peak temperature at 333 K, 374 K, 426 K, 466 K, 483 K and 516 K, respectively. The 466 K main glow peak had an activation energy of 2.06 eV and a kinetic order of 1.05. This TL material was also found to have three recombination centers, 1.80 eV, 2.88 eV and 3.27 eV by TL spectra analysis based on Franck-Condon model. It showed that 2.88 eV is the dominant center, followed by 3.27 eV level, and 1.80 eV center is ascertained as emission center of this material even though its very weak emission intensity.

• Polymer(Korea)
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• v.31 no.6
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• pp.497-504
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• 2007

We have prepared the dinuclear half-sandwich CGC(constrained geometry catalyst) with polymethylene bridge $[Zr(({\eta}^5\;:\;{\eta}^1-C_9H_5SiMe_2NCMe_3)Me_2)_2\;[(CH_2)_n]$ [n=6(4), 9(5), 12(6)] by treating 2 equivalents of MeLi with the corresponding dichlorides compounds. To study the catalytic behavior of the dinuclear catalysts we conducted copolymerization of ethylene and 1-hexene in the presence of three kinds of boron cocatalysts, $Ph_3C^+[B(C_6F_5)_4]^-\;(B_1),\;B(C_6F_5)_3\;(B_3)$, and $Ph_3C^+[(C_6F_5)_3B-C_6F_4-B(C_6F_5)_3]^{2-}\;(B_2)$. It turned out that all active species formed by the combination of three dinuclear CGCs with three cocatalyst were very efficient catalysts for the polymerization of olefins. The activities increase as the bridge length of the dinuclear CGCs increases. At the same time the dinuclear cocatalyst exhibited the lowest activity among three cocatalysts. The prime observation is that the dinuclear cocatalyst gave rise to the formation of the copolymers with the least branches on the polyethylene backbone.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.33-37
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• 2003

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1550-1552
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• 1996

Poly-Si films were deposited by Laser CVD using 193nm ArF Excimer Laser from disilane($Si_{2}H_{6}$) and then the films were etched by Laser Etching using the same Laser with SF6 etching gas. Dependence on various film deposition conditions and etching conditions was investigated respectively.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.178-186
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• 1990

다결정 실리콘 상의 텅스텐 시리사이드 막의 Si/W 조성비, 저항 및 응력을 측정함으로써 어닐링과 산화에 따른 막 특성의 변화를 조사하였다. 막형성 직후의 텅스텐 시리사이드 막의 Si/W 조성비는 2.6이었으나 어닐링 후에는 2.4-2.6으로 산화후에는 2.0-2.3으로 감소하였다. 비저항은 막형성 직후에는 41.2.OMEGA./$\square$ 로, 산화후에는 4.3.OMEGA./$\square$으로 감소하였다. 또한 텅스텐 실리사이드 막의 응력은 SiH$_{4}$유량의 증가에 따라 감소하였으며 어닐링후에는 증가하였다. 그밖에 과잉의 Si, 도펀트 P 그리고 막내에 유입된 F와 H등은 열처리시 실리사이드/다결정 Si 및 실리사이드/SiO$_{2}$의 계면으로 이동하여 응력의 증가를 초래하는 것으로 보인다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.436-439
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• 2010

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.