• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.359-360
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• 2013

The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.177-183
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• 2010

We report on the deposition of ZnO films using a metal organic chemical vapor deposition (MOCVD) as a function of pushing pressure and kind of reactant such as oxygen gas and water A diethylzinc (DEZ) is supplied and controlled by Ar pushing pressure through bubbling system. Oxygen gas and water are used as reactant in order to form oxidation. We knew that the surface roughness is related in the process conditions such as reactant kind and DEZ flow rate. A substrate temperature has little role of surface roughness with $O_2$ reactant. However, $H_2O$ reactant makes it to increase over the 20 times. We could get the maximum roughness of 39.16 nm at the 90 sccm of DEZ Ar flow rate, the 8 Pa of $H_2O$ vapor pressure, and the $140^{\circ}C$ of substrate temperature. In this paper, we investigated the ZnO films for the application to the light absorption layer of solar cell layer.

• Journal of Hydrogen and New Energy
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• v.14 no.2
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• pp.155-170
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• 2003

$Cu-Ce/{\gamma}-Al_2O_3$ based catalysts were prepared and tested for selective oxidation of CO in a $H_2$-rich stream(1% CO, 1% $O_2$, 60% $H_2$, $N_2$ as balance). The effects of Cu loading and weight ratio(=Cu/(Cu+Ce)) upon both activity and selectivity were investigated upon the change in temperatures, It was also examined how the activity and selectivity of catalysts were varied with the presence of $CO_2$ and $H_2O$ in the reactant feed. Among the various Cu-Ce catalysts with different catalytic metal composition, Cu-Ce(4 : 16 wf%) /${\gamma}-Al_2O_3$ catalyst showed the highest activity(>$T_{99}$) and selectivities(50-80%) under wide range of temperatures($175-220^{\circ}C$). However, in the Cu-Ce(4 : 16 wt%)/ ${\gamma}-Al_2O_3$, the presence of $CO_2$ and $H_2O$ in the reactant feed decreased the activity and the maximum activity(>$T_{99}$) in terms of reaction temperature moved by about $25^{\circ}C$ toward higher temperature, the $T_{>99}$ window was seen between $210-230^{\circ}C$ (selectivity 50-75%). From $CO_2-/H_2O-TPD$, it can be concluded that the main cause for the decrease in catalytic activity may be attributed to the blockage of the active sites by competitive adsorption of water vapor and $CO_2$ with the reactant at low temperatures.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.77-83
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• 2006

Anodic overpotential has been investigated with gas composition changes in a $100cm^2$ class molten carbonate fuel cell. The overpotential was measured with steady state polarization, reactant gas addition (RA), inert gas step addition (ISA), and electrochemical impedance spectroscopy (EIS) methods at different anodic inlet gas compositions, i.e., $H_2:CO_2:H_2O=0.69:0.17:0.14\;atm\;and\;H_2:CO_2:H_2O=0.33:0.33:0.33\;atm$, at a fixed $H_2$ flow rate. The results demonstrate that the anodic overpotential decreases with increasing $CO_2\;and\;H_2O$ flow rates, indicating the anode reaction is a gas-phase mass-transfer control process of the reactant species, $H_2,\;CO_2,\;and\;H_2O$. It was also found that the mass-transfer resistance due to the $H_2$ species slightly increases at higher $CO_2\;and\;H_2O$ flow rates. EIS showed reduction of the lower frequency semi-circle with increasing $H_2O\;and\;CO_2$ flow rate without affecting the high frequency semi-circle.

• Korean Chemical Engineering Research
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• v.62 no.3
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• pp.253-261
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• 2024

The impact of temperature on electrode reactions in 100 cm² molten carbonate cells operating as Fuel Cells (FC) and Electrolysis Cells (EC) was examined using the Reactant Gas Addition (RA) method across a temperature range of 823 to 973 K. The RA findings revealed that introduction of H₂ and CO₂, reduced the overpotential at Hydrogen Electrode (HE) in both the modes. However, no explicit temperature dependencies were observed. Conversely, adding O₂ and CO₂ to the Oxygen Electrode (OE) displayed considerable temperature dependencies in FC mode which can be attributed to increased gas solubility due to the electrolyte melting at higher temperatures. In EC mode, there was no observed temperature dependence for overpotential. Furthermore, the addition of O₂ led to a decrease in overpotential, while CO₂ addition resulted in an increased overpotential, primarily due to changes in the concentration of O₂ species.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.897-902
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• 1995

To get optimum synthetic condition of zeolite A made from Kampo natural bentonite, the effects of reactant mole fraction, reaction temperature, and reaction time were studied. The source of silica was 40% -H₂SO₄ treated natural bentonite and that of alumina was synthesized NaA1O₂. The reactant was mixed at the mole ratio of SiO₂ : Al₂O₃ : Na₂O : H₂O=2 : 1 : 1 : 25 and 2 : : 1 : 37. The mixed reactants were aged at 60℃ for 1hr and reacted at 90℃, 100℃ and 120℃ for 1, 3 and 5hr. The optimum synthetic condition was SiO₂ : A1₂O₃ : Na₂O H₂O=2 : 1 : 1 : 30 at 90℃ for 3hr and the synthetic zeolite A prepared by this optimum condition showed the dehydration temperature at 79.2℃ and lattice trans-formation at 503.3℃. The wright loss of water was 5.9%.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.448-454
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• 2007

Hydrothermal synthesis was conducted with starting material as Barium hydroxide and hydrous titania ($TiO_2{\cdot}xH_2O$) to obtain barium titanate fine Powder. The conversion, crystal structure and properties of as-prepared powder were investigated according to reaction temperature, time and concentration. The effect of variables on conversion was in order of time < temperature < concentration and the maximum conversion reached to 99.5% in the case of hydrothermal synthesis at $180^{\circ}C$ for 2 h with 2.0 M reactant concentration. At low concentration such as 0.25 M, formation of unreacted $BaCO_3$ and $TiO_2$ was not inevitable at even high reaction temperature and these components converted into $BaTi_2O_5$ at high temperature and remained as impurity. As concentration of reactant increased, the size of as-synthesized $BaTiO_3$ powder deceased and Ba/Ti molar ratio approached into 1, showing Ba/Ti ratio of $1{\pm}0.005$ for reaction at $180^{\circ}C$ for 2 h with 2.0 M concentration.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.406-410
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• 2008

The properties of pyrolytic carbon (PyC) deposited from $C_2H_2$ and a mixture of $C_2H_2/C_3H_6$ on $ZrO_2$ particles in a fluidized bed reactor were studied by adjusting the deposition temperature, reactant concentration, and the total gas flow rate. The effect of the deposition parameters on the properties of PyC was investigated by analyzing the microstructure and density change. The density could be varied from $1.0\;g/cm^3$ to $2.2\;g/cm^3$ by controlling the deposition parameters. The density decreased and the deposition rate increased as the deposition temperature and reactant concentration increased. The PyC density was largely dependent on the deposition rate irrespective of the type of the reactant gas used.

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3686-3690
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• 2012

Photochemical degradation of dimethyl phthalate (DMP) in Fe(III)/tartrate/$H_2O_2$ system was investigated utilizing fluorescent lamps as the primary light source. Effects of initial pH, light source, and initial concentration of each reactant on DMP photodegradation was examined. The results show that the system was able to effectively photodegrade DMP utilizing visible light. Fluorescent lamp, halide lamp, UV lamp and sunlight could all be used as the light sources. The optimal pH ranged among 3.0-4.0 for the system. Increases of the initial concentrations of Fe(III) and $H_2O_2$ accelerated the photodegradation of DMP, whereas excessively high initial tartrate concentration resulted in the decrease of photodegradation efficiency and rate of DMP.