• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.407-410
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.382-387
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• 2020

Hydrogen (H₂) is considered as a new clean energy resource for replacing petroleum because it produces only H₂O after the combustion process. However, owing to its explosive nature, it is extremely important to detect H₂ gas in the ambient atmosphere. This has triggered the development of H₂ gas sensors. 2-dimensional (2D) graphene has emerged as one of the most promising candidates for chemical sensors in various industries. In particular, graphene exhibits outstanding potential in chemoresistive gas sensors for the detection of diverse harmful gases and the control of indoor air quality. Graphene-based chemoresistive gas sensors have attracted tremendous attention owing to their promising properties such as room temperature operation, effective gas adsorption, and high flexibility and transparency. Pristine graphene exhibits good sensitivity to NO₂ gas at room temperature and relatively low sensitivity to H₂ gas. Thus, research to control the selectivity of graphene gas sensors and improve the sensitivity to H₂ gas has been performed. Noble metal decoration and metal oxide decoration on the surface of graphene are the most favored approaches for effectively controlling the selectivity of graphene gas sensors. Herein, we introduce several strategies that enhance the sensitivity of graphene gas sensors to H₂ gas.

• Journal of the Korean Electrochemical Society
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• v.9 no.2
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• pp.77-83
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• 2006

Anodic overpotential has been investigated with gas composition changes in a $100cm^2$ class molten carbonate fuel cell. The overpotential was measured with steady state polarization, reactant gas addition (RA), inert gas step addition (ISA), and electrochemical impedance spectroscopy (EIS) methods at different anodic inlet gas compositions, i.e., $H_2:CO_2:H_2O=0.69:0.17:0.14\;atm\;and\;H_2:CO_2:H_2O=0.33:0.33:0.33\;atm$, at a fixed $H_2$ flow rate. The results demonstrate that the anodic overpotential decreases with increasing $CO_2\;and\;H_2O$ flow rates, indicating the anode reaction is a gas-phase mass-transfer control process of the reactant species, $H_2,\;CO_2,\;and\;H_2O$. It was also found that the mass-transfer resistance due to the $H_2$ species slightly increases at higher $CO_2\;and\;H_2O$ flow rates. EIS showed reduction of the lower frequency semi-circle with increasing $H_2O\;and\;CO_2$ flow rate without affecting the high frequency semi-circle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.122-126
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.348-352
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• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• Journal of the Korean Institute of Gas
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• v.7 no.3 s.20
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• pp.7-12
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• 2003

A sour natural gas feed containing 1.37 and 1.70 mole percent $CO_2$ and $H_2S$ respectively is to be sweetened. Our research is to design an amine treating facility to bring the concentration of the acid gases in 100 MMSCFD of natural gas down to less than 5 ppm. The K-values for $CO_2,\;H_2S,\;H_2O$ and amine components contained in natural gas is obtained by using Kent-Eisenberg model. The new gas sweetening process designed by Ball and Veldman is modeled and optimized with the commercial simulator. Results of simulations led to further economic improvements over the present operating process.

• Journal of Energy Engineering
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• v.25 no.1
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• pp.171-176
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• 2016

Sour gas is natural gas or any other gas containing significant amounts of hydrogen sulfide ($H_2S$). Natural gas is usually considered sour gas if there are more than 5.7 milligrams of $H_2S$ per cubic meter of natural gas, which is equivalent to approximately 4 ppm by volume under standard temperature and pressure We have surveyed on the treatment and removal technology of sour gas, sour gas include a lot of hydrogen sulfide($H_2S$), Carbon dioxide($CO_2$), utane($C_4H_{10}$) and mercaptan($C_nH_{4n-1}SH$) etc. We need high technology for development for these kinds of raw gases and we should specially take care of treating and removal of theses raw gases. Therefor we are going to describe about these kinds of raw gases and about methods how to treat these kinds of gases.

• Journal of the Korean Institute of Gas
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• v.22 no.2
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• pp.90-96
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• 2018

Design techniques for minimizing the damage caused by leakage of $H_2S$ gas, contained in natural gas and petroleum, have been widely studied abroad in chemical plants that purify and process natural gas and petroleum. However, there is no domestic engineering practice and regulation of $H_2S$. In accordance with the circumstances, this study proposes the quantitative criteria of process equipment to install $H_2S$ toxic gas detector as 500 ppm and explains the valid basis. The $H_2S$ gas dispersion radius up to IDLH 100 ppm is calculated by ALOHA under previous $H_2S$ gas leak accident scenario. The weather conditions of modeling include the conditions of Ulsan, Yeosu and Daesan, the three major petrochemical complexes in Korea. The long radius up to 100 ppm was derived in order of Ulsan, Daesan, Yeosu. For emergency safety the dispersion radius up to 100 ppm of the $H_2S$ gas obtained in this study should be extended to apply the additional $H_2S$ toxic gas detector, and local climate conditions should be considered.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.648-653
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• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.