• Journal of Korea Foundry Society
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• v.42 no.5
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• pp.273-281
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• 2022

In order to understand the solidification behavior and microstructural evolution of the Al-Cu-Si ternary eutectic alloy system, changes of the microstructure of the Al-Cu-Si ternary eutectic alloy with different cooling rates were investigated. When the mold preheating temperature is 500℃, primary Si and Al2Cu dendrites are observed, with (α-Al+Al2Cu) binary eutectic and needle-shaped Si subsequently observed. In addition, even when the mold preheating temperature is 300℃, primary Si and Al2Cu dendrites can be observed, and both (α-Al+Al2Cu+Si) areas observed and areas not observed earlier appear. When the mold preheating temperature is 150℃, bimodal structures of the binary eutectic (α-Al+Al2Cu) and ternary eutectic (α-Al+Al2Cu+Si) are observed. When the preheating temperature of the mold is changed to 500℃, 300℃, and 150℃, the greatest change is in the Si phase, and upon reaching the critical cooling rate, the ternary eutectic of (α-Al+Al2Cu+Si) forms. If the growth of the Si phase is suppressed upon the formation of (α-Al+Al2Cu+Si), the growth of both Al and Cu is also suppressed by a cooperative growth mechanism. As a result of analyzing the Al-27wt%Cu-5wt%Si ternary eutectic alloy with a different alloy design simulation programs, it was confirmed that different results arose depending on the program. A computer simulation of the alloy design is a useful tool to reduce the trial and error process in alloy design, but this effort must be accompanied by a task that increases reliability and allows a comparison to microstructural results derived through actual casting.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.116-122
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• 2010

A $Cu_3Si$ film electrode is obtained by Si deposition on a Cu foil using DC magnetron sputtering, which is followed by annealing at $800^{\circ}C$ for 10 h. The Si component in $Cu_3Si$ is inactive for lithiation at ambient temperature. The linear sweep thermammetry (LSTA) and galvano-static charge/discharge cycling, however, consistently illustrate that $Cu_3Si$ becomes active for the conversion-type lithiation reaction at elevated temperatures (> $85^{\circ}C$). The $Cu_3Si$ electrode that is short-circuited with Li metal for one week is converted to a mixture of $Li_{21}Si_5$ and metallic Cu, implying that the Li-Si alloy phase generated at 0.0 V (vs. Li/$Li^+$) at the quasi-equilibrium condition is the most Li-rich $Li_{21}Si_5$. However, the lithiation is not extended to this phase in the constant-current charging (transient or dynamic condition). Upon de-lithiation, the metallic Cu and Si react to be restored back to $Cu_3Si$. The $Cu_3Si$ electrode shows a better cycle performance than an amorphous Si electrode at $120^{\circ}C$, which can be ascribed to the favorable roles provided by the Cu component in $Cu_3Si$. The inactive element (Cu) plays as a buffer against the volume change of Si component, which can minimize the electrode failure by suppressing the detachment of Si from the Cu substrate.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1192-1198
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• 1996

배선 재료나 salicide 트랜지스터에 적용될 것으로 기대되는 Cu 배선과 Co 단일층 및 Co/Ti 이중층을 사용하여 형성된 코발트 실리사이드간의 열적 안정성에 대하여 조사하였다. 40$0^{\circ}C$열처리후 Cu3Si 막이 CoSi2층과 Si 기판 사이에 형성되었는데, 이것은 Cu 원자의 확산에 기인한 것이다. $600^{\circ}C$에서의 열처리 후에 형성된 최종막의 구조는 각각 Cu/CoSi2/Cu3Si/Si과 TiO2/Co-Ti-Si 합금/CoSi2/Cu3Si/Si였으며, 상부에 형성된 TiO2층은 산소 오염에 의한 것으로 밝혀졌다.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.587-591
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• 1997

RBS와 XRD를 이용하여 C o-Nb이중층 실리사이드와 구리 배선층간의 열적안정성에 관하여 조사하였다. Cu$_{3}$Si등의 구리 실리사이드는 열처리시 40$0^{\circ}C$정도에서 처음 형성되기 시작하였는데, 이 때 형성되는 구리 실리사이드는 기판의 상부에 존재하던 준안정한 CoSi의 분해시에 발생한 Si원자와의 반응에 의한 것이다. 한편, $600^{\circ}C$에서의 열처리 후에는 CoSi$_{2}$층을 확산.통과한 Cu원자와 기판 Si와의 반응에 의하여 CoSi$_{2}$/Si계면에도 구리 실리사이드가 성장하였는데, 이렇게 구리 실리사이드가 CoSi$_{2}$/Si 계면에 형성되는 것은 Cu원자의 확산속도가 여러 중간층에서 Si 원자의 확산속도 보다 더 빠르기 때문이다. 열처리 결과 최종적으로 얻어진 층구조는 CuNbO$_{3}$/Cu$_{3}$Si/Co-Nb합금층/Nb$_{2}$O$_{5}$CoSi$_{2}$/Cu$_{3}$Si/Si이었다. 여기서 상부에 형성된 CuNbO$_{3}$는 Cu원자가 Nb$_{2}$O$_{5}$및 Co-Nb합금층과 반응하여 기지조직의 입계에 석출되어 형성된 것이다.

• Journal of Korea Foundry Society
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• v.17 no.5
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• pp.458-464
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• 1997

Mg-Cu-Si과 Mg-Cu-Ge계 3원 합금에서 비정질 생성범위와 열적, 기계적 성질을 조사하였다. Mg-Cu-Si계에서는 $15{\sim}45%Cu$, $0{\sim}10%Si$, Mg-Cu-Ge계에서는 $15{\sim}45%Cu$, $0{\sim}5%Ge$의 조성범위에서 각각 비정질 단상이 생성되었고, $15{\sim}22.5%Cu$, 2.5%Si(or Ge)의 조성범위에서 생성되는 비정질상은 180도 밀착굽힘을 하여도 파단되지 않는 양호한 인성을 가지고 있었으며, $Mg_{82.5}Cu_{15}Ge_{2.5}$비정질합금의 최대인장강도는 800 MPa로 결정질 Mg기 합금의 최대치인 300 MPa에 비해 월등히 높은 값을 나타내었다. 그러고 비정질합금의 결정화는 다음과 같은 과정으로 일어났다. 1) Si(or Ge) ${\le}$ 2.5%: 비정질 ${\to}$ 비정질+$Mg_2Cu$+Mg ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 2) Si(or Ge)=5%: 비정질 ${\to}$ $Mg_2Cu$+Mg+$Mg_2Si$(or Ge), 3) Si=10%: 비정질 ${\to}$ 비정질+$Mg_2Si$ ${\to}$ $Mg_2Si$+$Mg_2Cu$+Mg.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.41-47
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• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.3
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• pp.150-158
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• 2022

The effects of scandium addition on the Al-6Si-2Cu Alloy were investigated. The Al-6Si-2Cu-Sc alloy was prepared by gravity die casting process. In this study, scandium was added at 0.2 wt%, 0.4 wt%, 0.8 wt%, and 1.0 wt%. The microstructure of Al-6Si-2Cu-Sc alloy was investigated using Optical Microscope, Field Emission Scanning Electron Microscope, Electron Back Scatter Diffraction, and Transmission Electron microscope. The microstructure of Al-6Si-2Cu alloy with scandium added changed from dendrite structure to equiaxed crystal structure in specimens of 0.4 wt% Sc or more, and coarse needle-shape eutectic Si and β-Al₅FeSi phases were segmented and refined. The nanosized Al₃Sc intermetallic compound was observed to be uniformly distributed in the modified Al matrix.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.12-19
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• 1994

The crystallization behavior of the amorphous $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ alloy with isothermal annealing at $552^{\circ}C$ was studied by $M\"{o}ssbauer$ spectroscopy. The amorphous phase was revealed to coexist together with $Do_{3}-FeSi$ nanocrystalline and Cu-duster in annealed alloys by $M\"{o}ssbauer$ spectrum analysis. At the early stage of crystallization, Si content of FeSi is high due to the creation of Cu-cluster, and decreases with annealing until 60 minutes, which results in the increase in the mean hyperfine field of FeSi, and thereafter keeps constant. After 60 minutes, the decrease in the mean hyperfine field of the residual armrphous, in spite of a slight change in the volume fraction of the FeSi and the residual armrphous, is caused by the increase in the content of Nb and B in residual amorphous phase. Both directions of the hyperfine field, those of the FeSi and the residual amorphous, become randomly oriented in about 60 minutes. For FeSi and Cu-duster, the Avrami exponents are 0.51 and O.65, the activation energies are 2.35 eV and 2.44 eV, and the incubation times are 2.4 minutes and 0.8 minutes respectively. Earlier formation of Cu-duster than that of FeSi is coincidence with the fact that Cu atom promotes the nucleation of the FeSi.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.463-468
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• 2007

The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.