Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Interdiffusion in Cu/Capping Layer/NiSi Contacts

Cu/Capping Layer/NiSi 접촉의 상호확산

  • You, Jung-Joo (Department of Electronic Materials Engineering, The University of Suwon) ;
  • Bae, Kyoo-Sik (Department of Electronic Materials Engineering, The University of Suwon)
  • 유정주 (수원대학교 전자재료공학과) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 2007.09.27
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Abstract

The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.

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References

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