• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.1-7
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• 2003

The crystallized stable cobalt silicide$(CoSi_2)$ films were prepared on $poly-Si/SiO_2/Si$substrates for the application of inkjet printing head as a heating element with omega shape. The structural images and temperature resistance coefficient were investigated. The value of temperature resistance coefficient of the heating element was found to be about $0.0014/^{\circ}C$. The maximum power of the heating element was 2 W at the applied voltage of 2 V, 10 kHz in frequency and $1{\mu}s$ in pulse width. From the investigation of fatigue property according to the repeated applied voltages, there was no drastic changes in the resistances of heating element under the condition of $10^8$ pulsed cycles at below 15 V biased voltage. In contrast, the resistance of heating element was greatly increased at $10^6$ pulsed cycles when the heating element was operated at 17 V.

• Journal of Korea Foundry Society
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• v.14 no.6
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• pp.499-507
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• 1994

The effect of sodium gluconic acid on the collapsability of the sodium silicate type $CO_2$ mold was studied. The bending strength was saturated with gassing $CO_2$ for 60 sec. under $1kg/cm^2$ and with the flow rate of $10\;{\ell}\;/min$. It was decreased with aging after having been fully hardened. The retained strength was reduced in the heating temperature range of $100{\sim}1,100^{\circ}C$ and the retained strength peak near the heating temperature of $100^{\circ}C$ was removed by the effect of the sodium gluconic acid. Silica gel, $Na_2CO_3$ and dehydrated sodium silicates were formed from the binder of sodium silicate with the addition of sodium gluconic acid at the heating temperature of $100^{\circ}C$. $Na_4SiO_4$ was formed by the reaction of $Na_2O$, from decomposed $Na_2CO_3$, with the dehydrated sodium silicate at $500^{\circ}C$. The crystobalite type of $SiO_2$ was formed at $900^{\circ}C$. The sodium gluconic acid had no effect on the bending strength at around $1,100^{\circ}C$ due to the combustion loss of it.

• Journal of Magnetics
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• v.6 no.3
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• pp.90-93
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• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.81-86
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• 2010

On adsorbing carbon monoxide (CO) on the silica supported ruthenium/iron alloy ($Ru/Fe-SiO_2$) samples above mole ratio 9/1 of Ru/Fe five bands ($2138.7{\sim}2142.5cm^{-1}$, $2067.3{\sim}2073.1cm^{-1}$, $1976.7{\sim}2017.2cm^{-1}$, $1737.9{\sim}1799.3cm^{-1}$, $1625.7cm^{-1}$) were observed, and in $Ru/Fe-SiO_2$ samples below mole ratio 8/2 of Ru/Fe two bands ($1934.0{\sim}1990.2cm^{-1}$, $1625.7cm^{-1}$) were observed. The $2138.7{\sim}2142.5cm^{-1}$ bands, the $2067.3{\sim}2073.1cm^{-1}$ bands, and the $1988.3{\sim}2030.7cm^{-1}$ bands may be ascribed to stretching vibrations of CO molecules lineally bonded to the Ru atoms on supported Ru/Fe cluster surface, the $1737.9{\sim}1799.3cm^{-1}$ bands to stretching vibrations of CO molecules bridge bonded to the Ru atoms on supported Ru/Fe cluster surface or to stretching vibrations of CO molecules bonded to the Ru atoms on high Miller index planes, and the $1934.0{\sim}1990.2cm^{-1}$ bands to stretching vibrations of CO molecules lineally bonded to the Fe atoms on supported Ru/Fe cluster surface. The absorbances of the $1934.0{\sim}1990.2cm^{-1}$ bands in $Ru/Fe-SiO_2$ samples gradually increased with the increases of Ru/Fe mole ratio below the ratio of 8/2. This phenomena may be ascribed to the increases of Fe concentration of surface compared with the one of the sample and to the increases of surface area of supported Ru/Fe cluster according as increase of Ru/Fe mole ratio below the ratio of 8/2 compared with the $Fe-SiO_2$ sample.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1943-1945
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• 1996

In this paper, we developed a modified direct bonding method for the application of vacuum devices. By the proposed method, we successfully bonded the following materials: Si-Si, Si-$SiO_2$-Si, glass-Si, and glass-$SiO_2$-Si. In our experiments, we used corning #7070 wafer type glass and (100) or (110) single crystalline silicon wafers. In order to enhance the initial bonding strength we contacted the materials to be bonded as D. I. water wetted on the surfaces and evaporated the water under the room temperature and atmosphere environment. Finally we realized the glass bonding by simple direct bonding method which has been performed by electrostatic bonding method until now.

• Applied Chemistry for Engineering
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• v.32 no.1
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• pp.28-34
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• 2021

SiO2/Ag core-shell nanoparticles were synthesized by combining modified Stöber process and reverse micelle method using acetoxime as a reducing agent in water/dodecylbenzenesulfonic acid (DDBA)/cyclohexane reverse micells. The SiO2/Ag core-shells were studied for structure, morphology and size using UV-visible spectroscopy, XRD, SEM and TEM. The size of a SiO2/Ag core-shell could be controlled by changing the [water]/[DDBA] molar ratio (WR) values. The size and the polydispersity of SiO2/Ag core-shells increased with increase of the WR value. The resultant Ag nanoparticles exhibit a strong surface plasmon resonance (SPR) peak at 430 nm over the amorphous SiO2 nanoparticles. The SPR peak shifted to the red side with increase in nanoparticle size. Conductive pastes with 70 wt% SiO2/Ag core-shell were prepared, and the pastes were coated on the PET films using a screen-printing method. The printed paste film of the SiO2/Ag core-shell showed higher surface resistance than the commercial Ag paste in the range of 460~750 µΩ/sq.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.229-233
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• 2019

Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.840-844
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• 2003

The main objective of this investigation is to improve the photoluminescent of $Zn_{2}SiO_{4}:Mn$ phosphors prepared by the sol-gel technique. We try to use adding a new co-dopan such as Cr and Ti. The calcination temperature of sol-gel technique(1100 $^{\circ}C$) was lower than that of the solid state reaction (1300 $^{\circ}C$). Under 147nm excitation, the maximum emission intensity was obtained when the concentration of Cr and Ti was 0.1mol% with respect to $Zn_{2}SiO_{4}:Mn$. In order to study the effect of co-dopant, the content of Mn and the ratio of water to TEOS were fixed at 2mol% and 36:1, respectively.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.300-307
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• 1998

The $Co_{90}Fe_{10}$ single layer films were deposited on various substrates (glass, Si, polymide) using high vacuum RF magnetron sputtering system and nominall 1000 $\AA$ thick $Co_{90}Fe_{10}$ alloy films had a good high frequency characteristic. $M_S$ and $H_{an}$ values obtained from the B-H characteristic of the $10{\times}[100 nm \;Co_{90}Fe_{10}/100 nm\; SiO_2]$ multilayers agreed well with those obtained by calculation. Complex relative permeability $(={\{\mu}_r={\mu}_r',-j{\mu}$\mu$_r")$ at frequency f was measured from the transmission characteristics $(S_{11},\; S_{21}\;parameters)$ of the microstrip line which has a stacked structure consisting of sample magnetic films and a conductor and is connected to a network analyzer. The ${\mu}_r'-f$ characteristic was abtained from the megnetic absorption, which was analyzed from the S-parameter characteristics of the microstrip line. The ${\mu}_r'-f$ characteristic was also calculated from the ${\mu}_r"-f$-f characteristic using the Kramers-Kronig relation. The measurement results were confirmed to agree well with those obtained by calculations.culations.