• 미생물학회지
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• 제29권6호
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• pp.408-415
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• 1991

TOL plsmid size of Flavobacterium odoratum SUB53 was estimated as 83 Md and the optimum concentration of m-toluate degradation by TOL plasmid was 5 mM. $H_{2}$ production by Rhodopseudomonas sphaeroides KCTC1425 was largely dependent on nitrogenase activity and showed the highest at 30 mM malate with 7 mM glutamate as nitrogen source. Nitrogenase activities were inhibited by 0.3 mM $NH_{4}^{+}$ions, to be appeared the decrease of $H_{2}$ production. Conjugation of TOL plasmids from F. odoratum SUB53 and Pseudomonas putida mt-2 to R. sphaeroides showed the optimum at the exponential stage of recipient cells in presence of helper plasmid pRK2013. According to the investigation of catechol-1,2-oxygenase (C-1, 2-O) and catechol-2,3-oxygenase (C-2,3-O) activities of R. sphaeroides C1 (TOL SUB53) and C2 (TOL mt-2), the gene for C-2,3-O is located on TOL plasmid and gene for C-1, 2-O on the chromosome of R. sphaeroides. m-Toluate was biodegraded by TOL plasmid in R. sphaeroides C1 and C2, presumably to be produced $H_{2}$ gas from the secondary metabolites of m-toluate.e.

• 한국표면공학회지
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• 제32권2호
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• pp.165-171
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• 1999

The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{\circ}C$ under the total pressure of 0.30 Torr. It is found that the highest etching rate is obtained at 20% $O_2$ mole fraction, regardless of r. f. power and substrate temperature. The existence of the optimum $CF_4/O_2$ ratio is confirmed by SEM, XPS and XRD analysis. The highest etching reaction rate at $370^{\circ}C$ under 150W exceeds 1000 monolayers/min., which is equivalent to 0.4$\mu\textrm{m}$/min. The mass spectrometry analysis results reveal that the major reaction product is uranium hexa-fluoride $UF_6$. Based on the experimental findings, dominant overall reaction of uranium dioxide in $CF_4/O_2$ plasma is determined : $8UO_2+12CF_4+3O_2=8UF_6+12CO_{2-x}$ where $CO_{2-x}$ represents the undetermined mix of $CO_2$ and CO.

• 한국자기학회지
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• 제7권5호
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• pp.243-248
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• 1997

Ar+ $O_{2}$ 혼합가스 중에서 반응성 스퍼터링을 통해 직접 Fe-Hf-O계 초미세결정 연자성 박막을 제조하였으며, 이때 산소분압비의 변화가 Fe-Hf-O 박막의 미세구조 및 자기적 특성에 미치는 영향을 조사하였다. 산소분압이 증가함에 따라 박막의 포화자속밀도는 점차적으로 감소하며 연자기특성이 10%까지는 향상되다가 다시 열화되는 경향을 나타내었다. 최적조건인 10%의 산소분압에서 증착한 F $e_{82}$H $f_{3.4}$ $O_{14.6}$ 초미세결정 박막은 열처리 없이 증착한 상태에서 우수한 연자기 특성을 나타내었으며, 이때의 자기적 특성은 각각 포화자속밀도 17.7 kG, 보자력 0.7 Oe 및 실효투자율 2,500(100 MHz)의 값을 나타내었다. 산소분압이 증가함에 따라 결정립 크기가 감소하며 15% 이상의 산소분압에서는 F $e_{3}$ $O_{4}$가 생성되었다. 따라서 10%에서 가장 우수한 연자기 특성을 나타내는 것은 결정립 크기와 산화물 생성에 의해 설명될 수 있다. Fe-Hf-O계 초미세결정 박막의 전기비저항은 산소분압이 증가함에 따라 증가하는 경향을 나타내었다. 우수한 연자기 특성을 나타내는 F $e_{82}$H $f_{3.4}$ $O_{14.6}$ 박막의 경우, 약 150 .mu. .ohm.cm로 산소를 첨가하지 않은 경우의 30 .mu. .ohm. cm에 비하여 약 5배 증가된 값을 나타내었다. 따라서 F $e_{82}$H $f_{3.4}$ $O_{14.6}$초미세결정 박막이 고주파에서 우수한 연자기 특성을 나타내는 원인은 주로 높은 전기비저항과 미세하게 형성된 결정립에 기이한 것으로 생각된다.

• 핵의학기술
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• 제15권2호
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• pp.26-29
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• 2011

[F-18]FDG 제조 후 품질관리를 수행하는데 있어서 품질관리 항목 중 잔류용매 시험은 최종 [F-18]FDG 바이알에 잔류하는 유기용매를 측정하기 위한 것이다. 본 연구는 자동합성장치에 따른 최종 [F-18]FDG 바이알에 잔류하는 유기용매의 종류를 파악하고, 잔류량을 측정하고자 하였다. 불꽃이온화 검출기(Flame Ionization Detector)가 장착된 기체크로마토그래프(Agilent Technologies 7890A)를 이용하여 제조 후 일주일 이내의 밀봉 바이알에 보관한 [F-18]FDG를 기체크로마토그래프에 $1.0{\mu}L$ 씩 주입한 후 각 피크영역을 구하였다. FASTlab은 평균이 에탄올 72 ppm, 아세토니트릴 54 ppm, 초산 1030 ppm으로 나타났으며, TRACERlab MX는 평균이 에탄올 439 ppm 및 아세토니트릴 79 ppm이 검출되어 모두 의약품 잔류용매기준의 허용량 이내에 있었다. [F-18]FDG 주사액에 있는 잔류용매는 모두 허용량 이내로 환자검사에 사용하는데 적합하였다. 또한 최종 [F-18]FDG 바이알에 있을 수 있는 초산의 최대 이론량은 1167 ppm으로 따로 검량을 하지 않아도 되는 것으로 나타났다. 이 결과에서는 자동합성장치에 따라 방사성의약품의 잔류용매의 종류 및 양이 다를 수 있음을 보였다.

• 한국안전학회지
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• 제29권6호
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• pp.68-75
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• 2014

It is very important to classify explosion hazardous area (EHA) suitably and to use proper explosion-proof electric installations for facilities using flammable gases and liquids. In the past, various examples in the Notification of Ministry of Employment and Labor were referred to in classifying EHA. But, at present, many companies use the hypothetical volume in Korean Standards (KS). This study reviews the validity of EHA classification based on the hypothetical volume by comparing the calculated radii of EHA with those obtained by a consequence analysis program called PHAST and a mathematical approach in British Standards (BS). The radii of EHA by the hypothetical volume were found to be slightly larger than those by the other two methods. This was attributed to rather conservative uses of a safety factor(k) and a correction factor(f) for availability of ventilation in calculating the hypothetical volume. Since the differences are not so conspicuous, however, it is concluded that the hypothetical volume in KS is a valid means for the classification of EHA. This study also presents a table of the radii of EHA for easy reference by small-scale companies using city gas, C3-LPG and flammable liquid(toluene), respectively. The table consists of 25 leakage scenarios corresponding to combinations of 5 pipe(nozzle) sizes and 5 operating conditions for each flammable gas and liquid.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.18-26
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• 1999

In this study, the undoped amorphous layers and phosphorus doped amorphous layers are fabricated using LPCVD at 531$^{\circ}C$ with SiH$_4$ gas or at same temperature with PH$_3$ gas during deposition, respectively. The thickness of deposited amorphous layer from this experiments was 5000 ${\AA}$. In this experiments, undoped amorphous layers are deposited with SiH$_4$and Si$_2$H$\_$6/ gas in a low pressure reactor using LPCVD. These amorphous layers can be doped for poly-silicon by phosphorus ion implantation. The experiments of this study are carried out by phosphorus ion implantation with energy 40 keV into P doped and undoped amorphous silicon layers. The distribution of phosphorus profiles are measured by SIMS(Cameca 6f). Recoiling effects and two dimensional profiles are also explained by comparisions of experimental and simulated data. Finally range moments of SIMS profiles are calculated and compared with simulation results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 한국진공학회지
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• 제12권S1호
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• pp.1-6
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• 2003

SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23\times10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1\times10^{18}$ ions/$\textrm{cm}^2$. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.

• 분석과학
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• 제21권6호
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• pp.543-552
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• 2008

식품 중 클로로프로판올 화합물인 3-MCPD (3-monochloropropane-1,2-diol, $C_3H_7ClO_2$, MW. 110) 및 1,3-DCP (1,3-dichloropropan-2-ol, $C_3H_6Cl_2O$, MW. 128)를 분석하는 효과적인 방법을 확립하였다. 시료를 5M NaCl용액으로 균질화 한 후 알루미늄옥사이드와 섞어 유리컬럼에 충진하고 디클로로메탄으로 시료 중 클로로프로판올 화합물을 용출하였다. 용출된 클로로프로판올 화합물은 감압증류장치와 질소가스로 농축한 뒤 HFBA (Heptafluorobutyric anhydride, $C_8F_{14}O_3$, MW. 410)로 유도체화하여 GC/MS로 분석하였다. 3-MCPD-HFBA 유도체화 화합물(MW. 502)은 m/z 253, 275, 289, 291, 453를 선택이온으로 하고 1,3-DCP-HFBA 유도체화 화합물(MW. 325)은 110, 275, 277를 선택이온으로 설정하여 정성 정량 하였다. 확립된 분석법의 정량한계는 3-MCPD 및 1,3-DCP 모두 0.01 mg/kg이었고, 0.01~1.00 mg/kg의 농도범위에서 직선성($R^2{\geq}0.999$)이 좋았으며 평균회수율은 약 97%내외였다. 확립된 분석법을 이용하여 다양한 식품 중 클로로프로판올 화합물을 조사한 결과, 0.0~0.3 mg/kg (n=56/157) 수준으로 3-MCPD로 검출되었다.

• 대한금속재료학회지
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• 제48권11호
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.