• 한국수소및신에너지학회논문집
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• 제26권5호
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• pp.402-408
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• 2015

In D-T fusion reaction, $D_2$ (duterium) and $T_2$(tritium) are used as fuel gas. The exhaust gas of nuclear fusion includes hydrogen isotopes $Q_2$ (Q means H, D or T), tritiated components ($CQ_4$ and $Q_2O$), CO, $CO_2$, etc. All of hydrogen isotopes should be recovered before released to the atmosphere. This study focused on the recovery of hydrogen isotopes from $CQ_4$ and $Q_2O$. Two kinds of experiments were conducted to investigate the catalytic reaction characteristics of SMR (Steam Methane Reforming) and WGS (Water Gas Shift) reactions using Pt catalyst. First test was performed to convert $CH_4$ into $H_2$ using 6% $CH_4$, 6% CO/Ar feed gas. In the other test, 100% CO gas was used to convert $H_2O$ into $H_2$ at various reaction conditions (reaction temperature, S/C ratio, GHSV). As a result of the first test, $CH_4$ and CO conversion were 41.6%, 57.8% respectively at $600^{\circ}C$, S/C ratio 3, GHSV $2000hr^{-1}$. And CO conversion was 72% at $400^{\circ}C$, S/C ratio 0.95, GHSV $333hr^{-1}$ in the second test.

• 한국재료학회지
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• 제19권2호
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• 자연과학논문집
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• 제5권1호
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• pp.67-75
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• 1992

결정성 aluminosilicate 광물의 일종인 천연 zeolite는 광물학적 특성과 화학적 표면활성으로 인하여 다방면의 공업화학적 이용가치가 매우 높고 광물중 특히 가장 높은 양이온교환능을 가지고 있어 기체분자에 대한 선택적 흡착력이 큰 molecular sieve로써 흡착분리제로는 물론, 건조제, 흡습제, 이온교환체, 촉매, 증량제 그리고 폐수처리제, 경수의 연화제등으로 이용도가 날로 증가하고 있다. 국내산 천연 zeolite를 IN HCL용액과 NaCl용액으로 화학처리하여 다공성을 증가시켜 column충전제로 사용한 결과, 혼합기체 Ar, $N_2$ CO및 $CH_4$의 분리특성에 관해서 HCL용액으로 처리한 mordenite 시료는 활성화온도가 $300^{\circ}C$일 경우, CO와 $CH_4$의 분리는 곤란하나 $350^{\circ}C$에서는 분리가 용이하였고 NaCl용액으로 처리한 시료는 미처리한 것과 거의 유사하였다. Ar과 $N_2$와의 분리에는 산 또는 알칼리로 화학처리한 시료에도 별로 효과가 없었으나 HCL용액과 NaCl용액을 연속적으로 처리한 천연 zeolite는 합성 zeolite의 특성에 견줄만한 정도로 기체분리효과와 HETP값을 보여주었다. 한편 시료의 화학처리에 의한 Ar과 CO의 흡착열의 변화는 극성기체인 CO의 경우, 별로 변화가 없지만 무극성기체인 Ar은 영향을 받기가 용이하였다. 또한 carrier gas He의 유속이 대략 20~30ml min범위일때 최소의 HETP값을 가지며 column의 효능이 좋았다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• 한국결정성장학회지
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• 제13권1호
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• pp.36-40
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• 2003

$CH_4/(C_2H_5O)_4Si/H_2$/Ar가스 혼합물을 출발 반응원료로 하여 플라즈마 화학기상증착법으로 Si 기판 위에 유사 다이아몬드 나노복합체(diamond-like nanocomposite, DLN) 박막을 증착하였다. 성장된 막의 화학구조와 미세구조를 확인하였으며 막의 마모특성을 평가하였다. 증착된 DLN 막은 다이아몬드와 유사한 a-C:H 구조와 실리카와 유사한 a-Si:O 구조가 네트워크 형태로 구성되어 있음을 확인하였으며 극도로 낮은 마모계수와 마모속도를 나타내어 내마모 코팅용 보호막으로 의 응용에 적합한 것으로 나타났다.

• 한국결정성장학회지
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• 제22권4호
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• pp.190-193
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• 2012

RF-PECVD(radio frequency plasma enhanced chemical vapor deposition)법을 이용하여 $CH_4+SiH_4+Ar$ 혼합 가스로부터 유리 기판 위에 투명 다이아몬드상 카본(diamond-like carbon, DLC)을 합성하였다. 공정압력과 rf-파워, $CH_4/SiH_4/Ar$ 혼합비, 그리고 증착 시간은 각각 0.1 torr, 100W, 20 : 1 : 1, 20분이었다. DLC가 증착된 유리와 증착되지 않은 유리의 투과도를 가시광선 영역에서 비교하였고, DLC가 증착된 유리의 경도, 표면 조도와 두께를 nanoindenter와 AFM으로 측정하였다. DLC가 증착된 유리의 투과도는 증착되지 않은 유리와 비교할 때 380 nm 파장에서 약 83 %, 500 nm 이상의 파장에서는 95 % 이상 수준이었다. DLC가 증착된 유리의 경도는 증착되지 않은 유리의 약 2.5배이었다. 증착된 DLC 박막은 매우 고른 표면을 보였으며 20분 증착 후 두께는 150 nm 이상으로 나타났다.

• 한국표면공학회지
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• 제44권2호
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• pp.60-67
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• 2011

Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.

• 한국세라믹학회지
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• 제32권6호
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.194-198
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• 2002

Energy Distribution Function in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-tenn approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4-Ar$ mixtures shows the Maxwellian distribution for energy. That is, f(${\varepsilon}$) has the symmetrical shape whose axis of symmetry is a most probably energy

• 한국재료학회지
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• 제19권10호
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.