• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.373-375
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• 2006

$CF_4$ gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of $CF_4$ gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other $CF_x$ radicals, such as $CF_2$ and $CF_3$, were not seen in this experiment whereas strong C and $C_2$ emissions, dissociation products of $CF_4$ gas, were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.141-144
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• 2001

An accurate cross sections set are necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method. we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. In previous paper, we calculated the electron transport coefficients in pure $CF_4$ molecular gas by using two-term approximation of the Boltzmann equation. And by using this simulation method. we confirmed erroneous calculated results of transport coefficients for $CF_{4}$ molecule treated in this paper having 'C2v symmetry' as $C_{3}H_{8}$ and $C_{3}F_{8}$ which have large vibrational excitation cross sections which may exceed elastic momentum transfer cross section. Therefore, in this paper, we calculated the electron transport coefficients(W and $ND_L$) in pure $CF_4$ gas by using multi-term approximation of the Boltzmann equation by Robson and Ness which was developed at lames-Cook university, and discussed an application and/or validity of the calculation method by comparing the calculated results by two-term and multi-term approximation code.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.141-144
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• 2001

An accurate cross sections set are necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method, we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. In previous paper, we calculated the electron transport coefficients in pure CF$_4$ molecular gas by using two-term approximation of the Boltzmann equation. And by using this simulation method, we confirmed erroneous calculated results of transport coefficients for CF$_4$ molecule treated in this paper having 'C2v symmetry'as C$_3$H$_{8}$ and C$_3$F$_{8}$ which have large vibrational excitation cross sections which may exceed elastic momentum transfer cross section. Therefore, in this paper, we calculated the electron transport coefficients(W and ND$_{L}$) in pure CF$_4$ gas by using multi-term approximation of the Boltzmann equation by Robson and Ness which was developed at James-Cook university, and discussed an application and/or validity of the calculation method by comparing the calculated results by two-term and multi-term approximation code.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.628-631
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• 2004

A tetrafluoromethane$(CF_4)$ is most useful gas in plasma dry etching, because it has a electron attachment cross-section. therefor it is important to calculate transport coefficients like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient. and critical E/N. The aim of this study is to get these transport coefficients for information of the insulation strength and efficiency of etching process. Electron transport coefficients in $CF_4+Ar$ gas mixture are simulated in range of E/N values from 1 to 250 [Td] at 300[K} and 1 [Torr] by using Boltzmann equation method. The results of this method can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas. and is presented in this paper for various mixture ratios of $CF_4+Ar$ gas mixture.

• Membrane Journal
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• v.26 no.3
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• pp.220-228
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• 2016

Carbon molecular sieve (CMS) hollow fiber membranes were prepared by carbonizing a polyimide precursor manufactured by non-solvent induced phase separation process. Gas separation performance of CMS hollow fiber membrane was investigated on the effect of three carbonization conditions. CMS membrane with the highest gas separation performance was obtained at the pyrolysis temperature of $250-450^{\circ}C$: $N_2$, $SF_6$, and $CF_4$ permeance were 20, 0.32, 0.48 GPU, respectively, and $N_2/SF_6$ and $N_2/CF_4$ selectivities were 62 and 42, respectively. In the $SF_6/CF_4/N_2$ mixture gas test, when the stage cut was 0.2, the recovery ratio of $SF_6$ and $CF_4$ was over 99% and 98%. $SF_6$ concentration ratio was 4.5 times higher than the $SF_6$ concentration at the feed side. From the results, it was concluded that CMS membrane was one of the promising membranes for recovery Perfluorocompound gases process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1179-1182
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.29-32
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• 2001

We measured the electron transport coefficients(the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_L$) in pure $CF_4$ over the E/N range from 0.04 Td to 250 Td by the double shutter drift tube. And these electron transport coefficients in pure $CF_4$ were calculated over the E/N range from 0.01 to 250 Td at 1 Torr by using the two-term approximation of the Boltzmann equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• Bulletin of the Korean Chemical Society
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• v.8 no.3
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• pp.174-179
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• 1987

The results of an ab initio (6-31G) molecular orbital calculations of the dipole moment derivatives and gas phase IR intensities in $CH_3F$ and $CF_4$ are reported. The results are compared with corresponding values obtained from a CNDO calculation. We have also analyzed the theoretical polar tensors into the charge, charge flux, and overlap contributions. The effective term charges of hydrogen atom appeared to be transferable among the fluoromethane molecules.