• 호남수학학술지
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• 제36권3호
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• pp.555-568
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• 2014

On the basis of the theory of a falling shadow and fuzzy sets, the notion of a falling fuzzy BCI-commutative ideal of a BCI-algebra is introduced. Relations between falling fuzzy BCI-commutative ideals and falling fuzzy ideals are given. Relations between fuzzy BCI-commutative ideals and falling fuzzy BCI-commutative ideals are provided. Characterizations of a falling fuzzy BCI-commutative ideal are established, and conditions for a falling fuzzy (closed) ideal to be a falling fuzzy BCI-commutative ideal are considered.

• 한국재료학회지
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• 제10권3호
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• pp.179-183
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• 2000

$BCI_3/H_2/Ar$ ICP(Inductively Coupled Plasma)를 이용한 GaN이 건식식각에 있어서 공정변수들이 식각 특성에 미치는 영향을 분석하고 적정조건을 도출하였다. 연구 결과 식각속도와 측벽수직도 공히 ICP 전력, bias 전압과 $BCI_3$ 조성의 증가, 공정압력의 감소에 의해 현저히 증가하며, 온도의 증가에 따라 다소간 증가하였고, 온도의 증가에 따라 다소간 증가하였고, $BCI_3$조성이 가장 큰 영향을 미쳤다. 표면거칠기는 bias 전압 증가에 의해 크게 향상, $BCI_3$ 조성의 감소에 따라 향상되었으며 다른 변수는 큰 영향을 미치지 않았다. 결과적으로 ICP 전력 900W, bias 전압 400V, $BCI_3$ 조성 60%, 공정압력 4mTorr의 조건에서 175nm/min 정도의 $CI_2$ 사용 시와 유사한 높은 식각속도와 평탄한 표면이 얻어졌다. Bias 전압이 낮은 경우 식각 후 시료 표면에 $GaC_x$로 추정되는 식각부산물이 관찰되었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.49-49
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• 1999

In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

• 대한수학회논문집
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• 제9권3호
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• pp.531-538
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• 1994

This paper is a continuation of [1] and [3]. In [3], the notion of BCI-G parts of BCI-algebras was introduced and various properties were investigated. In this paper, we consider the inverse of [3; Theorem 15], and define a KG-union BCI-algebra and investigate their properties.

• International Journal of Contents
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• 제7권3호
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• pp.6-12
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• 2011

In this paper, we show how such enhancement of Farwell-Donchin BCI enables a fresh, inexperienced user to achieve quickly an accurate BCI control with a high information transfer rate. This paper presents the results of a BCI experiment where the participant, who had no previous BCI experience, obtained, in about 20 min, a highly reliable and fast control over the BCI spelling device based on the Farwell-Donchin paradigm. Offline analysis showed that the high performance of the BCI was, to a high extent, due to the use of the ERP component N1, in addition to component P300, which has been considered the only ERP component important for the prediction of user's choice in the Farwell-Donchin paradigm in many publications.

• 대한수학회논문집
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• 제9권2호
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• pp.265-270
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• 1994

In 1966, Iseki [2] introduced the notion of BCI-algebras which is a generalization of BCK-algebras. Lei and Xi [3] discussed a new class of BCI-algebra, which is called a p-semisimple BCI-algebra. For p-semisimple BCI-algebras, a subalgebra is an ideal. But a subalgebra of an arbitrary BCI/BCK-algebra is not necessarily an ideal. In this note, a BCI/BCK-algebra that every subalgebra is an ideal is called a normal BCI/BCK-algebra, and we give characterizations of normal BCI/BCK-algebras. Moreover we give a positive answer to the problem which is posed in [4].(omitted)

• 대한수학회논문집
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• 제17권3호
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• pp.403-407
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• 2002

In this note We discuss the Uniformity in BCI-algebras using Zhang's congruence relation.

• 대한수학회논문집
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• 제12권3호
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• pp.499-505
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• 1997

This paper is a continuation of [3]. We prove that if A is quasi-associative (resp. an implicative) ideal of a BCI-algebra X then the k-nil radical of A is a quasi-associative (resp. an implicative) ideal of X. We also construct the quotient algebra $X/[Z;k]$ of a BCI-algebra X by the k-nhil radical [A;k], and show that if A and B are closed ideals of BCI-algebras X and Y respectively, then

• 대한수학회논문집
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• 제24권3호
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• pp.321-331
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• 2009

In this paper, we investigate some fundamental properties and establish some results of f-derivations of BCI-algebras. Also, we prove Der(X), the collection of all f-derivations, form a semigroup under certain binary operation.

• 한국전자통신학회논문지
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• 제19권3호
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• pp.583-588
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• 2024

BCI(뇌-컴퓨터 인터페이스) 기술의 등장으로 거울 신경을 분석하는 것이 용이해졌다. 그러나 인간의 생각에 의존하는 BCI 시스템의 정확성을 평가하는 것은 그 질적 특성으로 인해 어려움을 겪는다. BCI의 잠재력을 활용하기 위해 우리는 움직임의 궁극적인 목표에 따라 발화 속도가 영향을 받는 인간의 거울 신경의 특성을 기반으로 정확도를 측정하는 새로운 접근법을 제안한다. 본 논문에 2장에서는 거울 신경을 소개한다. 또한, 거울 신경을 위한 인간 자세 추정에 대한 설명을 제시한다. 3장에서는 인간 자세 추정 기법을 활용하여 실시간 동적 환경에 적합한 강력한 포즈 추정 방법을 소개한다. 이어서 이러한 로봇 환경을 이용한 BCI의 정확성을 분석하는 방법을 제시한다.