• Title/Summary/Keyword: $BCI_3$

Search Result 93, Processing Time 0.029 seconds

FALLING FUZZY BCI-COMMUTATIVE IDEALS

  • Jun, Young Bae;Song, Seok-Zun
    • Honam Mathematical Journal
    • /
    • v.36 no.3
    • /
    • pp.555-568
    • /
    • 2014
  • On the basis of the theory of a falling shadow and fuzzy sets, the notion of a falling fuzzy BCI-commutative ideal of a BCI-algebra is introduced. Relations between falling fuzzy BCI-commutative ideals and falling fuzzy ideals are given. Relations between fuzzy BCI-commutative ideals and falling fuzzy BCI-commutative ideals are provided. Characterizations of a falling fuzzy BCI-commutative ideal are established, and conditions for a falling fuzzy (closed) ideal to be a falling fuzzy BCI-commutative ideal are considered.

Reactive Ion Etching of GaN Using $BCI_3/H_2/Ar$ Inductively Coupled Plasma ($BCI_3/H_2/Ar$ 유도결합 플라즈마를 이용한 GaN의 건식 식각에 관한 연구)

  • Kim, Sung-Dae;Jung, Seog-Yong;Lee, Byung-Taek;Huh, Jeung-Soo
    • Korean Journal of Materials Research
    • /
    • v.10 no.3
    • /
    • pp.179-183
    • /
    • 2000
  • The reactive ion etching process of GaN using $BCI_3/H_2/Ar$ high density inductively coupled plasma was investigated. Results showed that both of the etch rate and the sidewall verticality significantly increased as the ICP power, bias voltage, and the $BCI_3$ ratio were increased whereas effects of the other variables were minimal. The maximum etch rate of about 175nm/min was obtained at the condition of ICP power 900W, bias voltage 400V, 4mTorr, and 60% $BCI_3$, which resulted in reasonably smooth etched surface. Etch residues were observed in the case of samples etched at the low bias conditions, which were proposed to be as the $GaCI_x$ compounds.

  • PDF

Magnetized inductively coupled plasma etching of GaN in $Cl_2/BCl_3$ plasmas

  • Lee, Y.H.;Sung, Y.J.;Yeom, G.Y.
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 1999.10a
    • /
    • pp.49-49
    • /
    • 1999
  • In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

  • PDF

ON THE BCI-G PART OF BCI-ALGEBRAS (III)

  • Jun, Y.B.;Hong, S.M.;Roh, E.H.;Meng, J.
    • Communications of the Korean Mathematical Society
    • /
    • v.9 no.3
    • /
    • pp.531-538
    • /
    • 1994
  • This paper is a continuation of [1] and [3]. In [3], the notion of BCI-G parts of BCI-algebras was introduced and various properties were investigated. In this paper, we consider the inverse of [3; Theorem 15], and define a KG-union BCI-algebra and investigate their properties.

  • PDF

The letter recognition using BCI system

  • Kaplan, Alexander Ya;Song, Young-Jun;Kim, Nam
    • International Journal of Contents
    • /
    • v.7 no.3
    • /
    • pp.6-12
    • /
    • 2011
  • In this paper, we show how such enhancement of Farwell-Donchin BCI enables a fresh, inexperienced user to achieve quickly an accurate BCI control with a high information transfer rate. This paper presents the results of a BCI experiment where the participant, who had no previous BCI experience, obtained, in about 20 min, a highly reliable and fast control over the BCI spelling device based on the Farwell-Donchin paradigm. Offline analysis showed that the high performance of the BCI was, to a high extent, due to the use of the ERP component N1, in addition to component P300, which has been considered the only ERP component important for the prediction of user's choice in the Farwell-Donchin paradigm in many publications.

NORMAL BCI/BCK-ALGEBRAS

  • Meng, Jie;Wei, Shi-Ming;Jun, Young-Bae
    • Communications of the Korean Mathematical Society
    • /
    • v.9 no.2
    • /
    • pp.265-270
    • /
    • 1994
  • In 1966, Iseki [2] introduced the notion of BCI-algebras which is a generalization of BCK-algebras. Lei and Xi [3] discussed a new class of BCI-algebra, which is called a p-semisimple BCI-algebra. For p-semisimple BCI-algebras, a subalgebra is an ideal. But a subalgebra of an arbitrary BCI/BCK-algebra is not necessarily an ideal. In this note, a BCI/BCK-algebra that every subalgebra is an ideal is called a normal BCI/BCK-algebra, and we give characterizations of normal BCI/BCK-algebras. Moreover we give a positive answer to the problem which is posed in [4].(omitted)

  • PDF

k-NIL RADICAL IN BCI-ALGEBRAS II

  • Jun, Y.B;Hong, S.M
    • Communications of the Korean Mathematical Society
    • /
    • v.12 no.3
    • /
    • pp.499-505
    • /
    • 1997
  • This paper is a continuation of [3]. We prove that if A is quasi-associative (resp. an implicative) ideal of a BCI-algebra X then the k-nil radical of A is a quasi-associative (resp. an implicative) ideal of X. We also construct the quotient algebra $X/[Z;k]$ of a BCI-algebra X by the k-nhil radical [A;k], and show that if A and B are closed ideals of BCI-algebras X and Y respectively, then

  • PDF

Robust Real-time Pose Estimation to Dynamic Environments for Modeling Mirror Neuron System (거울 신경 체계 모델링을 위한 동적 환경에 강인한 실시간 자세추정)

  • Jun-Ho Choi;Seung-Min Park
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.19 no.3
    • /
    • pp.583-588
    • /
    • 2024
  • With the emergence of Brain-Computer Interface (BCI) technology, analyzing mirror neurons has become more feasible. However, evaluating the accuracy of BCI systems that rely on human thoughts poses challenges due to their qualitative nature. To harness the potential of BCI, we propose a new approach to measure accuracy based on the characteristics of mirror neurons in the human brain that are influenced by speech speed, depending on the ultimate goal of movement. In Chapter 2 of this paper, we introduce mirror neurons and provide an explanation of human posture estimation for mirror neurons. In Chapter 3, we present a powerful pose estimation method suitable for real-time dynamic environments using the technique of human posture estimation. Furthermore, we propose a method to analyze the accuracy of BCI using this robotic environment.