• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.457-457
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• 2010

Flexible organic light emitting diodes (F-OLEDs) requires excellent moisture permeation barriers to minimize the degradation of the F-OLEDs device. Specifically, F-OLEDs device need a barrier layer that transmits less than $10^{-6}g/m^2/day$ of water and $10^{-5}g/m^2/day$ of oxygen. To increase the life time of F-OLEDs, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. Thus, $Al_2O_3/TiO_2$ multi-layer was deposited onto the polyethersulfon (PES) substrate by electron cyclotron resonance atomic layer deposition (ECR-ALD), and the water vapor transmission rates (WVTR) were measured. WVTR of moisture permeation barriers is dependent upon density of films and initial state of polymer surface. A significant reduction of WVTR was achieved by increasing density of films and by applying low plasma induced interlayer on the PES substrate. In order to minimize damage of polymer surface, a 10 nm thick $TiO_2$ was deposited on PES prior to a $Al_2O_3$ ECR-ALD process. High quality barriers were developed from $Al_2O_3$ barriers on the $TiO_2$ interlayer. WVTR of $Al_2O_3$ by introducing $TiO_2$ interlayer was recorded in the range of $10^{-3}g/m^2.day$ at $38^{\circ}C$ and 100% relative humidity using a MOCON instrument. The WVTR was two orders of magnitude smaller than $Al_2O_3$ barriers directly grown on PES substrate without the $TiO_2$ interlayer. Thus, we can consider that the $Al_2O_3/TiO_2$ multi-layer passivation can be one of the most suitable F-OLEDs passivation films.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.105-105
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• 2016

Recently, high power impulse magnetron sputtering (HIPIMS) has attracted considerable attentions due to its high potential for industrial applications. By pulsing the sputtering target with high power density and short duration pulses, a high plasma density and high ionization of the sputtered species can be obtained. HIPIMS has exhibited several merits such as increased coating density, good adhesion, microparticle-free and smooth surface, which make the HIPIMS technique desirable for synthesizing hard coatings. However, hard coatings present intrinsic defects (columnar structures, pinholes, pores, discontinuities) which can affect the corrosion behavior, especially when substrates are active alloys like steel or in a wear-corrosion process. Atomic layer deposition (ALD), a CVD derived method with a broad spectrum of applications, has shown great potential for corrosion protection of high-precision metallic parts or systems. In ALD deposition, the growth proceeds through cyclic repetition of self-limiting surface reactions, which leads to the thin films possess high quality, low defect density, uniformity, low-temperature processing and exquisite thickness control. These merits make ALD an ideal candidate for the fabrication of excellent oxide barrier layer which can block the pinhole and other defects left in the coating structure to improve the corrosion protection of hard coatings. In this work, CrN/Al2O3/CrN multilayered coatings were synthesized by a hybrid process of HIPIMS and ALD techniques, aiming to improve the CrN hard coating properties. The influence of the Al2O3 interlayer addition, the thickness and intercalation position of the Al2O3 layer in the coatings on the microstructure, surface roughness, mechanical properties and corrosion behaviors were investigated. The results indicated that the dense Al2O3 interlayer addition by ALD lead to a significant decrease of the average grain size and surface roughness and greatly improved the mechanical properties and corrosion resistance of the CrN coatings. The thickness increase of the Al2O3 layer and intercalation position change to near the coating surface resulted in improved mechanical properties and corrosion resistance. The mechanism can be explained by that the dense Al2O3 interlayer acted as an excellent barrier for dislocation motion and diffusion of the corrosive substance.

• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.230-236
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• 2021

Ionic conduction mechanism of Mg-Al layered double hydroxides (LDHs) intercalated with CO₃^2- (Mg-Al CO₃^2- LDH) was studied. The electromotive force for the water vapor concentration cell using Mg-Al CO₃^2- LDH as electrolyte showed water vapor partial pressure dependence and obeyed the Nernst equation, indicating that the hydroxide ion transport number of Mg-Al CO₃^2- LDH is almost unity. The ionic conductivity of Mg(OH)₂, MgCO₃ and Al₂(CO₃)₃ was also examined. Only Al₂(CO₃)₃ showed high hydroxide ion conductivity of the order of 10^-4 S cm^-1 under 80% relative humidity, suggesting that Al₂(CO₃)₃ is an ion conducting material and related to the generation of carrier by interaction with water. To discuss the ionic conduction mechanism, Mg-Al CO₃^2- LDH having deuterium water as interlayer water (Mg-Al CO₃^2- LDH(D₂O)) was prepared. After the adsorbed water molecules on the surface of Mg-Al CO₃^2- LDH(D₂O) were removed by drying, DC polarization test for dried Mg-Al CO₃^2- LDH(D₂O) was examined. The absorbance attributed to O-D-stretching band for Mg-Al CO₃^2- LDH(D₂O) powder at around the positively charged electrode is larger than that before polarization, indicating that the interlayer in Mg-Al CO₃^2- LDH is a hydroxide ion conduction channel.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.55-55
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• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.63.1-63
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• 2002

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.267-270
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• 2011

In the process of inkjet-printed zinc tin oxide thin-film transistor, the effect of metallic interlayer underneath of source and drain electrode was investigated. The reason for the improved electrical properties with thin molybdenum oxide ($MoO_3$) layer was due to the chemically intermixed state of metallic interlayer, aluminum source and drain, and oxide semiconductor together. The atomic configuration of three Mo $3d_3$ and $3d_5$ doublets, three different Al 2p core levels, two Sn $3d_5$, and four different types of oxygen O 1s in the interfaces among those layers was confirmed by X-ray photospectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.420-423
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• 2008

The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

• Journal of Magnetics
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• v.8 no.1
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• pp.13-17
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• 2003

The longitudinal magnetooptical Kerr effect was used to analyse magnetic domains in soft magnetic ${(Fe_{97}A1_3)}_{85}N_{15}$/$Al_{2}O_{3}$ multilayers in order to get microscopic understanding of interlayer exchange coupling. The measuring system consists of a Kerr microscope, a CCIR camera (with an 8-bit framegrabber), 16 bit digital camera and computer system for real-time image processing and to control external magnetic field and cameras. The strength of ferromagnetic (EM) coupling as a function of the spacer thickness of $Al_2O_3$ was investigated. It was found that strong FM-coupling, strong uniaxial anisotropy and coherent rotation of the magnetization have been observed for the spacer thickness in the range of 0.2 nm $\leq$ t $\leq$ 1 m, however, weak FM-coupling, patch domains and $360^{\circ}$-walls occur for the spacer thickness of t = 2.5 nm. At a spacer thickness of t $\geq$ 5 nm transition takes place from weak FM-coupling to the decoupled state where complex interlayer interactions and different types of the domain walls were observed.

• Journal of Welding and Joining
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• v.11 no.1
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• pp.62-72
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• 1993

Recently there is an increased interest in joining of ceramics to metals and brazing now an accepted method of joining for a wide variety of ceramic to metal combination. The present research work is aimed at establishing the basis of the metal-ceramic joining of $Al_{2}$O$_{3}$ to STS 304 with using Cu-7.5wt% Zr insert metals. Also the microstructures of the brazed joints were observed by using optical microscope and SEM and the reaction products were analyzed by using EDX, WDX and XRD. As a result, the following findings were obtained. The reaction layers of the brazed joints of $Al_{2}$O$_{3}$ to STS 304 are composed of four layers at the bonded interlayer. Double reaction layers are formed at the interface of $Al_{2}$O$_{3}$ insert metal. Layer I was composed of ZrO$_{2}$ particles, Fe-Cr-Ni compounds in Cu matrix, while layer II ZrO$_{2}$ band phase containing Fe-Cr-Ni compounds.