• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.499-504
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• 1998

ZnO varistors having a composition of 98.0 mol% ZnO 1.0 mol% $Bi_2O_3$ 0.5 mol% $MnO_2$ were prepared by the Pechini process and the sintering behavior and electrical characteristics were studied. ZnO varis-색 powder with $1.5\mu\textrm{m}$ mean diameter and narow particle size distribution was obtained using the Pechni pro-cess. Typical intermediate stage grain growth of liquid phase sintering was observed by sintering at $1100^{\circ}C$ At this temperature ZnO varistors having uniform grain size and Bi-rich liquid phase distributed uniformly along grain boundaries were prepared. The nonlinear coefficients of the ZnO varistors were in the range of 40-60 The breakdown voltages of the varistors were nearly inversely propeortional to the grain size which reflects that ZnO varistors prepared by the Pechini process have uniform distribution of Bi-rich liquid phase along grain boundaries It is believed that the microstructures of ZnO varistors can be controlled effectively by using the Pechini process which makes the control of the electrical properties of ZnO varistors possible.

• Journal of Powder Materials
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• v.14 no.5
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• pp.327-332
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• 2007

In a view point of environment, the advanced electric contact material without environmental load element such as cadmium has to be developed. Extensive studies have been carried out on $Ag-SnO_2$ electric contact material as a substitute of Ag-CdO contact materials. In the present study, powder metallurgy including compaction and sintering is introduced to solve the incomplete oxidation problems in manufacturing process of $Ag-SnO_2$ electrical contact material. The $Ag-SnO_2$ contact material, fabricated in this study, was actually set in an electric switchgear of which working voltage is 462V and current is between 25 and 40A, for the purpose of testing its performance. As a result, it exceeded the existing Ag-CdO contact materials in terminal-temperature ascent and main contact resistance.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.370-373
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• 2010

In fabricating plasma display panels, the photolithographic process is used to form patterns of barrier ribs with high accuracy and high aspect ratio. It is important in the photolithographic process to control the refractive index of the photosensitive paste. The composition of this paste for photolithography is based on the $B_2O_3-SiO_2-Al_2O_3$ glass system, including additives of alkali oxides and rare earth oxides. In this work, we investigated the density, structure and refractive index of glasses based on the $B_2O_3-SiO_2-Al_2O_3$ system with the addition of $Li_2O$, $K_2O$, $Na_2O$, CaO, SrO, and MgO. The refractive index of the glasses containing K2O, Na2O and CaO was similar to that of the [BO3] fraction while that of the SrO, MgO and Li2O containing glasses were not correlated with the coordination fraction. The coordination number of the boron atoms was measured by MAS NMR. The refractive index increased with a decrease of molar volume due to the increase in the number of non-bridging oxygen atoms and the polarizability. The lowest refractive index (1.485) in this study was that of the $B_2O_3-SiO_2-Al_2O_3-K_2O$ glass system due to the larger ionic radius of $K^+$. Based on our results, it has been determined that the refractive index of the $B_2O_3-SiO_2-Al_2O_3$ system should be controlled by the addition of alkali oxides and alkali earth oxides for proper formation of the photosensitive paste.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.40-45
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• 2008

We developed small molecular organic nonvolatile $4F^2$ memory cells using metal layer evaporation followed by $O_2$ plasma oxidation. Our memory cells sandwich an upper ${\alpha}$-NPD layer, Al nanocrystals surrounded by $Al_2O_3$, and a bottom ${\alpha}$-NPD layer between top and bottom electrodes. Their nonvolatile memory characteristics are excellent: the $V_{th},\;V_p$ (program), $V_e$ (erase), memory margin ($I_{on}/I_{off}$), data retention time, and erase and program endurance were 2.6 V, 5.3 V, 8.5 V, ${\approx}1.5{\times}10^2,\;1{\times}10^5s$, and $1{\times}10^3$ cycles, respectively. They also demonstrated symmetrical current versus voltage characteristics and a reversible erase and program process, indicating potential for terabit-level nonvolatile memory.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.12
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• pp.1281-1286
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• 2008

Nitrous oxide(N$_2$O) is well known as a greenhouse gas that contributes to the global warming (310 times more per molecule than carbon dioxide) and to the destruction of the ozone layer. The objective of this study is to estimate N$_2$O emission factor using an emission isolation flux chamber from municipal wastewater treatment plants. N$_2$O gas was analysed by GC/ECD with 6 port gas sampling valve. The results of this study were as follows. N$_2$O emission factor of 5-Stage process from Y wastewater treatment plants was lowest as 0.94 g-N$_2$O/kg-TN. And that of other processes were 2.65 g-N$_2$O/kg-TN for Activated sludge process, 9.30 g-N$_2$O/kg-TN for Denipho process, and 26.73 g-N$_2$O/kg-TN for Sequencing Batch Reactor process. We have known that 5-Stage process is most appropriate process to reduce greenhouse for municipal wastewater treatment plants.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.129-135
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• 2005

In this study, we have analyzed the removal efficiencies of $SO_2$ and $SO_2/NO$ by the pulsed corona discharge process and investigated the effects of several process variables on those removal efficiencies systematically. The effects of process variables such as applied voltage, pulse frequency, residence time, and initial concentrations of reactants (NO, $SO_2$, $NH_3$, $H_2O$, and $O_2$) on the removal efficiency were analyzed. As the applied voltage, the pulse frequency or the residence time increases or as the $O_2$ or the $H_2O$ or the $NH_3$ concentration in the inlet feed gas stream increases, the $SO_2$ removal efficiencies and the simultaneous removal efficiencies of $SO_2/NO$ also increase. These experimental results can be used as a basis to design the pulsed corona discharge process to remove $NO_x$ and $SO_x$.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.202-205
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• 2010

In this study, the etch properties of $Al_2O_3$ thin films deposited by atomic layer deposition were investigated as a function of the $O_2$ content in $BCl_3$/Ar inductively coupled plasma. The experiments were performed by comparing the etch rates and selectivity of $Al_2O_3$ over the hard mask materials as functions of the input plasma parameters, such as the gas mixing ratio, DC-bias voltage, ratio-frequency (RF) power and process pressure. The highest obtained etch rate was 477 nm/min at an RF power of 700 W, $O_2$ to $BCl_3$/Ar gas ratio of 15%, DC-bias voltage of -100 V and process pressure of 15 mTorr. The deposition occurred on the surfaces when the amount of $O_2$ added to the $BCl_3$/Ar gas was too high at a low DC-bias voltage or high process pressure. X-ray photoelectron spectroscopy was used to investigate the chemical reactions on the etched surface.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.1
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• pp.7-14
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• 2010

AE(acoustic emission) sensor has been used for a state monitoring and observation during a ultra-precision machining because AE signal, which has high frequency range, is sensitive enough. In case of ceramic fabrication, a monitoring of machining state is important because of its hard and brittle nature. A machining characteristic of ceramic is susceptibly different in accordance with variable machining conditions. In this study, Yttria($Y_2O_3$) ceramic was fabricated using the ultra-precision lapping process with in-process electrolytic dressing(IED) method. And the surface machining characteristic and AE sensor signal were compared and analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.7-11
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• 2000

The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.21-26
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• 2004

Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{\circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{\circ}C$. while the c-axis growth became dominant above 83$0^{\circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.