• Journal of Welding and Joining
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• v.26 no.1
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• pp.56-62
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• 2008

In this paper, elastic and plastic adhesion index was very important in deciding adhesive characteristics and varying elastic and plastic index, dimensionless load and pull-off force were analyzed and simulated. Finally, using AFM, experimental surface roughness parameters of substrates and pull-off force between tip and substrates were produced. Using these values, pull-off forces were calculated and were compared with experimental pull-off forces. Through simulation and experiment, it was found that interaction of asperity also had very important influence on adhesive contact.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.450-455
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• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.34-36
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• 2015

Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

• Bulletin of the Korean Chemical Society
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• v.26 no.1
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• pp.127-130
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• 2005

The early stage of the self assembly for octadecyltrichlorosilane (OTS)-based monolayers is investigated using atomic force microscopy (AFM). Height measurements using AFM prove that the island height of the monolayers gradually increases with increasing the island size, and is close to the limiting value (h = $\sim$25 $\AA$) after d = $\sim$600 nm in size. Since the theoretical length of a covalently bound OTS molecule is 26.2 Å, the limiting value of the island height means that the islands with d ${\geq}$ 600 nm consist of close-packed, fully extended chains. The heights for the islands with d < 600 nm are lower than the limiting value and decrease with decreasing the island sizes. This observation indicates that the OTS molecules in the small islands are less densely packed, and that the packing densities of the islands increase as the islands grow in size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.824-828
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• 2016

In this study, effects of ICP (inductively coupled plasma) treatment on PAR thin film have been investigated. A maximum etch rate of the PAR thin films and the selectivity of PAR to PR were obtained as 110 nm/minand 1.1 in the $CF_4/O_2$ (5:15 sccm) gas mixture. We present the surface properties of PAR thin film with various treatment conditions. The surface morphology and cross section of the PAR thin film was observed by AFM (atomic force microscopy) and FE-SEM (filed emission scanning electron microscopy).

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.1-7
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• 2002

The developed patterns by direct writing of electron beam are measured by AFM, FESEM and optical profiler of WYKO NT3300. From different measurement methods, the measured linewidths of the patterns are shown a little bit wider than designed pattern size due to electrons scattering effect during direct writing of electron beam. The optimized conditions of these experiments are suggested and explained for the forming of structures below 0.1 ㎛ dimension size. Because of electron scattering effects from the different under layers such as Si, Si$_3$N$_4$ and aluminum, the developed pattern size is also influenced by the accelerated energy of electrons, dose, resist and soft and hard bake conditions in PMMA. The distributions of electron beam and calculations of backscattering coefficient are demonstrated by Monte Carlo simulation. From the measured results, the developed linewidth of PMMA/Al /silicon is shown a little bit wider than that of PMMA/Si$_3$N$_4$/silicon structure due to the backscattering effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.9
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• pp.598-601
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• 2015

The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.

• Applied Microscopy
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• v.50
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• pp.28.1-28.6
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• 2020

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

• The Journal of Korean Academy of Prosthodontics
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• v.39 no.2
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• pp.208-219
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• 2001

To study the effect of dentin permeability on a tooth with wear from tooth brushing after application of desensitizing agent, extracted teeth free from caries were chosen. Coronal dentin discs with thickness of 1mm were prepared. Using the split chamber device developed by Pashely, hydraulic conductance, scanning electron microscope images(SEM) and atomic force microscope images(AFM) were compared and contrasted before and immediately after the application of desensitizing agent and after equivalent tooth brushing of 1 week, 2 weeks, and 6 weeks. Four commercially available desensitizing agents were used in this study ; they were Gluma, Seal & Protect, All-Bond 2 and MS Coat. The results of this study are as follows. 1. On all specimens, the hydraulic conductance decreased after the application of tooth desensitizing agent. 2. Except the specimens treated with MS Coat, the remaining specimens had an increase in dentin permeability after tooth brushing for 1 and 2 weeks but a decrease after 6 weeks. 3. The specimens treated with MS Coat had statistically significant increase in the dentin permeability regardless with the duration of tooth brushing. 4. On examination of SEM and AFM, the dentinal tubule diameter had decreased after treatment of desensitizing agents. The specimens other than those treated with MS Coat, smear layers were noted after tooth brushing. It is not always consistant but the hydraulic conductance correlated with the images from SEM and AFM.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.591-596
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• 2006

Topology and molecular ordering of NPD(4,4'-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl) thin films deposited under magnetic field with post-deposition annealing were investigated. NPD was deposited onto ITO glass substrates via thermal evaporation process in vacuum. It is of great importance for highly oriented organic/metal films to have improved device performances such as higher current density and luminance efficiency. AFM (Atomic Force Microscope) and XRD (X-Ray Diffraction) analyses were used to characterize the topology and structure of oriented NPD films. The multi-source meter was used to observe the current-voltage characteristics of the ITO (Indium-Tin Oxide) / NPD (4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl) / Al (Aluminum) device. While NPD thin films deposited under magnetic field were not molecularly well aligned according to the XRD results, the films after post-deposition annealing at $130^{\circ}C$ were well-oriented. AFM images show that NPD thin films deposited under magnetic field had a smoother surface than those deposited without magnetic field. The current-voltage performance of NPD thin films was improved due to the enhanced electron mobility in the well-aligned NPD films.