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http://dx.doi.org/10.4313/TEEM.2015.16.1.34

Influence of Wet Annealing on the Performance of SiZnSnO Thin Film Transistors  

Han, Sangmin (Department of Semiconductor Engineering, Cheongju University)
Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.1, 2015 , pp. 34-36 More about this Journal
Abstract
Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.
Keywords
Wet annealing; SZTO TFT; XRD; AFM; XPS;
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