• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.33-37
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• 2007

This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using vertical shunt symmetric inductor. We applied a vertical shunt symmetric inductor to match the input and output in 3 GHz CMOS LNA to reduce the circuit area. This size efficient amplifier has been designed in a $0.18\;{\mu}m$ digital logic CMOS process. In this paper, the case of conventional asymmetric inductor, and vertical shunt symmetrical inductor with a relatively higher number of turns have been compared in order to efficient a size efficient CMOS LNA design method while still retaining the circuit operation characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.143-149
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• 2008

A novel compact model for a five-port transformer balun is proposed for the efficient circuit design of hybrid balun. Compared to the conventional model, the proposed model provides much faster computation time and more reasonable values for the extracted parameters. The hybrid balun, realized in $0.18\;{\mu}m$ CMOS, achieves 2.8 dB higher gain and 1.9 dB lower noise figure than its passive counterpart only at a current consumption of 0.67 mA from 1.2 V supply. By employing the hybrid balun, a differential zero-IF receiver is designed in $0.18\;{\mu}m$ CMOS for IEEE 802.15.4 ZigBee applications. It is composed of a differential cascode LNA, passive mixers, and active RC filters. Comparative investigations on the three receiver designs, each employing the hybrid balun, a simple transformer balun, and an ideal balun, clearly demonstrate the advantages of the hybrid balun in fully differential CMOS RF receivers. The simulated results of the receiver with the hybrid balun show 33 dB of conversion gain, 4.2 dB of noise figure with 20 kHz of 1/f noise corner frequency, and -17.5 dBm of IIP3 at a current consumption of 5 mA from 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.16-23
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• 2010

This paper presents 6bit 250MS/s flash A/D converter which can be applied to wireless communication system. To solve the problem of large power consumption in flash A/D converter, control algorithm by input signal level is used in comparator stage. Also, input voltage range detector circuit is used in reference resistor array to minimize the dynamic power consumption in the comparator. Compared with the conventional A/D converter, the proposed A/D converter shows 4.3% increase of power consumption in analog and a seventh power consumption in digital, which leads to a half of power consumption in total. The A/D converter is implemented in a $0.18{\mu}m$ CMOS 1-poly 6-metal technology. The measured results show 106mW power dissipation with 1.8V supply voltage. It shows 4.1bit ENOB at sampling frequency 250MHz and 30.27MHz input frequency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.789-796
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• 2014

A CMOS photo detection bias quenching circuit is developed to be used with single photon avalanche photodiodes (SPADs) operating in Geiger mode for the detection of weak optical signals. The proposed bias quenching circuits for the performance improvement reduce the circuit size as well as improve the performance of the quenching operation. They are fabricated in a $0.18-{\mu}m$ standard CMOS technology to verify the effectiveness of this technique with the chip area of only $300{\mu}m^2$, which is about 60 % of the previous reported circuit. Two types of proposed circuits with resistive and capacitive load demonstrated improved performance of reduced quenching time. With a commercial APD by HAMAMATSU, the dead time can be adjusted as small as 50 ns.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.8
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• pp.1544-1551
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• 2007

A start-up circuit of the bandgap reference voltage generator of cascode current mirror type with wide operating voltage range and enhanced power-up characteristics is proposed in the paper. It is confirmed by simulation that the newly proposed start-up circuit does not affect the operation of the bandgap reference voltage generatory even though the supply voltage(VDDA) is higher and has more stable power-up characteristic than the conventional start-up circuit. Test chips are designed and fabricated with $0.18{\mu}m$ tripple well CMOS process and their test has been completed. The mean value of measured the reference voltage(Vref) is 738mV and The three sigma value($3{\sigma}$) is 29.88mV.

• ETRI Journal
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• v.29 no.4
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• pp.463-469
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• 2007

A phase-locked loop (PLL) is described which is operable from 0.4 GHz to 1.2 GHz. The PLL has basically the same architecture as the conventional analog PLL except the locking information is stored as digital code. An analog-to-digital converter is embedded in the PLL, converting the analog loop filter output to digital code. Because the locking information is stored as digital code, the PLL can be turned off during power-down mode while avoiding long wake-up time. The PLL implemented in a 0.18 ${\mu}m$ CMOS process occupies 0.35 $mm^2$ active area. From a 1.8 V supply, it consumes 59 mW and 984 ${\mu}W$ during the normal and power-down modes, respectively. The measured rms jitter of the output clock is 16.8 ps at 1.2 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.193-197
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• 2013

This paper presents a 5-bit true time delay circuit using a standard 0.18 ${\mu}m$ CMOS process for the broadband phased array antenna without the beam squint. The maximum time delay of ~106 ps with the delay step of ~3.3 ps is achieved at 5-20 GHz. The RMS group delay and amplitude errors are < 1 ps and <2 dB, respectively. The measured insertion loss is <27 dB and the input and output return losses are <12 dB at 5-15 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is $1.04{\times}0.85\;mm^2$ including pads.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.1-10
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• 2006

In this paper, an 1.8V 8-bit 500MSPS CMOS A/D Converter is proposed. In order to obtain the resolution of 8bits and high-speed operation, a Cascaded-Folding Cascaded-Interpolation type architecture is chosen. For the purpose of improving SNR, Cascaded-folding Cascaded-interpolation technique, distributed track and hold are included [1]. A novel folding circuit, a novel Digital Encoder, a circuit to reduce the Reference Fluctuation are proposed. The chip has been fabricated with a $0.18{\mu}m$ 1-poly 5-metal n-well CMOS technology. The effective chip area is $1050{\mu}m{\times}820{\mu}m$ and it dissipates about 146mW at 1.8V power supply. The INL and DNL are within ${\pm}1LSB$, respectively. The SNDR is about 43.72dB at 500MHz sampling frequency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.160-165
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• 2009

A 12b 2 MS/s cyclic ADC processing 3.3 Vpp single-ended rail-to-rail input signals is presented. The proposed ADC demonstrates an offset voltage less than 1 mV without well-known calibration and trimming techniques although power supplies are directly employed as voltage references. The SHA-free input sampling scheme and the two-stage switched op-amp discussed in this work reduce power dissipation, while the comparators based on capacitor-divided voltage references show a matched full-scale performance between two flash sub ADCs. The prototype ADC in a $0.18{\mu}m$ 1P6M CMOS demonstrates the effective number of bits of 11.48 for a 100 kHz full-scale input at 2 MS/s. The ADC with an active die area of $0.12\;mm^2$ consumes 3.6 m W at 2 MS/s and 3.3 V (analog)/1.8 V (digital).

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.98-104
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• 2013

This paper presents a WBAN UWB receiver circuit for RTLS(real time location system) and wireless data communication. The UWB receiver is designed to OOK modulation for energy detection. The UWB receiver is designed for sub-sampling techniques using 4bit ADC and DLL.The proposed UWB receiver is designed in $0.18{\mu}m$ CMOS and consumes 61mA with a 1.8V supply voltage. The UWB receiver achieves a sensitivity of -85.7 dBm, a RF front-end gain of 42.1 dB, a noise figure of 3.88 dB and maximum sensing range of 4 meter.