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Size-Efficient 3 GHz CMOS LNA  

Jhon, Hee-Sauk (Seoul National Univ. Electrical Engineering, ISRC)
Yoon, Yeo-Nam (Seoul National Univ. Electrical Engineering, ISRC)
Song, Ick-Hyun (Seoul National Univ. Electrical Engineering, ISRC)
Shin, Hyung-Cheol (Seoul National Univ. Electrical Engineering, ISRC)
Publication Information
Abstract
This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using vertical shunt symmetric inductor. We applied a vertical shunt symmetric inductor to match the input and output in 3 GHz CMOS LNA to reduce the circuit area. This size efficient amplifier has been designed in a $0.18\;{\mu}m$ digital logic CMOS process. In this paper, the case of conventional asymmetric inductor, and vertical shunt symmetrical inductor with a relatively higher number of turns have been compared in order to efficient a size efficient CMOS LNA design method while still retaining the circuit operation characteristics.
Keywords
CMOS; Low Noise Amplifier (LNA); vertical shunt inductor; thin metal CMOS process;
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