• Membrane Journal
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• v.18 no.2
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• pp.176-184
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• 2008

Nano-porous ceramic membranes was synthesized by the sol-gel method. Gas permeation of hydrogen and nitrogen was determined by single composition gas. Pore size $0.1{\mu}m$ and porosity 32% of flat type ${\alpha}-Al_2O_3$ substrate was manufactured. An intermediate ${\gamma}-Al_2O_3$ layer with pore size of 4 nm was formed by dip-coating. Polymeric silica sol was synthesized by acid catalyzed hydrolysis and condensation of tetra-ethyl-ortho-silicate. Supported membranes on alumina were prepared by dipping and calcining. He, $N_2$ permeation experiments with nanoporous sol-gel modified supported ceramic membranes were peformed to determine the gas transport characteristics. $He/N_2$ permselectivity around $100{\sim}160$ and helium permeation in the order of $10^{-7}mol/m^2{\cdot}s{\cdot}Pa$ were measured in the temperature range of $303{\sim}363K$.

• Journal of Information Display
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• v.12 no.4
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• pp.209-212
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• 2011

The threshold voltage shift (${\Delta}V_{th}$) under positive-voltage bias stress (PBS) of InGaZnO (IGZO) thin-film transistors (TFTs) annealed at different temperatures in air was investigated. The dramatic degradation of the electrical performance was observed at the sample that was annealed at $700^{\circ}C$. The degradation of the saturation mobility (${\mu}_{sat}$) resulted from the diffusion of indium atoms into the interface of the IGZO/gate insulator after crystallization, and the degradation of the subthreshold slope (S-factor) was due to the increase in the interfacial and bulk trap density. In spite of the degradation of the electrical performance of the sample that was annealed at $700^{\circ}C$, it showed a smaller ${\Delta}V_{th}$ under PBS conditions for $10^4$ s than the samples that were annealed at $500^{\circ}C$, which is attributed to the nanocrystal-embedded structure. The sample that was annealed at $600^{\circ}C$ showed the best performance and the smallest ${\Delta}V_{th}$ among the fabricated samples with a ${\mu}_{sat}$ of $9.38cm^2/V$ s, an S-factor of 0.46V/decade, and a ${\Delta}V_{th}$ of 0.009V, which is due to the passivation of the defects by high thermal annealing without structural change.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.220-223
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• 2016

This letter proposes a low noise amplifier which has low noise figure and high linearity simultaneously using a cascode structure with an additional transistor. The proposed structure minimizes the noise source by using optimizing transistor sizes and also improves linearity from the current bleeding technique. The device was fabricated in a $0.5{\mu}m$ GaAs pHEMT process and has noise figure of 1.1 dB, a voltage gain of 15.0 dB, an $OIP_3$ of 30.8 dBm and an input/output return loss of 11.6 dB/10.4 dB from 1.8 to 2.6 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.271-274
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• 2002

In this study, we fabricated the semiconductor laser for optical sensor with 1.55${\mu}{\textrm}{m}$wavelength region. In order to suppress lasing oscillation and to reduce the reflectivity, the devices of bending type were designed and fabricated. Their output power were 1.6㎽ at a pulse drive current of 100㎃. When the fabricated device was applied to optical fiber gyroscope, the output power of optical fiber was 540㎻ at a CW drive current of 100㎃, the full width at half maximum spectral width was 53nm. And the random-walk coefficient was measured to be 2.5$\times$10­$^3$deg/√hr, the gyro output drift was also found to be 0.3 deg/hr. So we confirmed the possibility of application to use for light source of optical fiber gyroscope.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.752-757
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• 2011

The effects of reaction temperature, reactant concentration, pH of solution and mixing order of reactants on the particle shape and size distribution of zinc oxide were investigated in the preparation of zinc oxide from ammonium hydroxide and zinc acetate by the method of aqueous hydrothermal precipitation method, and the photocatalytic ability of zinc oxide synthesized was measured from the degradation of tartrazine under UV irradiation. The average particle size was increased with pH of solution but decreased with zinc acetate concentration and reaction temperature. The optimum condition for the synthesis of minimum sized zinc oxide was pH 11.2, concentration of zinc acetate 0.6 M and reaction temperature $90^{\circ}C$, and its average particle size was 3.133 ${\mu}$m. 97% of tartrazine was degraded by zinc oxide in sixty minutes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.161-168
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• 1998

Reactive ion etching process for InGaAs/InP using the CH4/H2 high density inductively coupled plasma was investigated. The experimental design method proposed by Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power mainly affects surface roughness and verticality of the sidewall, bias power does etch rate and verticality, CH4 gas concentraion does the verticality and etch rate, and the distance between the induction coil and specimen mostly affects the surface roughness. It was also observed that the chamber pressure is the dominant parameter for the etch rate and verticality of the sidewall. The optimum condition was ICP power 700W, bias power 150 W, 15% $CH_4$, 7.5 mTorr, and 14 cm distance, resulting in about 3 $\mu\textrm{m}$/hr etch rate with smooth surfaces and vertical mesa sidewalls.

• Korean Journal of Remote Sensing
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• v.25 no.2
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• pp.193-203
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• 2009

Snow cover is one of the important parameters since it determines surface energy balance and its variation. To classify snow and cloud from satellite data is very important process when inferring land surface information. Generally, misclassified cloud and snow pixel can lead directly to error factor for retrieval of surface products from satellite data. Therefore, in this study, we perform algorithm for detecting snow cover area with remote sensing data. We just utilize visible reflectance, and infrared channels rather than using NDSI (Normalized Difference Snow Index) which is one of optimized methods to detect snow cover. Because COMS MI (Meteorological Imager) channels doesn't include near infra-red, which is used to produce NDSI. Detecting snow cover with visible channel is well performed over clear sky area, but it is difficult to discriminate snow cover from mixed cloudy pixels. To improve those detecting abilities, brightness temperature difference (BTD) between 11 and 3.7 is used for snow detection. BTD method shows improved results than using only visible channel.

• The Korean Journal of Pain
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• v.32 no.4
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• pp.286-291
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• 2019

Background: Breast cancer is complicated by a high incidence of chronic postoperative pain (25%-60%). Regional anesthesia might play an important role in lowering the incidence of chronic pain; however it is not known if the pectoral nerve block (PECS block), which is commonly used for breast surgery, is able to prevent this complication. Our main objective was therefore to detect any association between the PECS block and chronic pain at 3, 6, 9, and 12 months in patients undergoing breast surgery. Methods: We conducted a prospective, monocentric, observational study. We enrolled 140 consecutive patients undergoing breast surgery and divided them in patients receiving a PECS block and general anesthesia (PECS group) and patients receiving only general anesthesia (GA group). Then we considered both intraoperative variables (intravenous opioids administration), postoperative data (pain suffered by the patients during the first 24 postoperative hours and the need for additional analgesic administration) and development and persistence of chronic pain (at 3, 6, 9, and 12 mo). Results: The PECS group had a lower incidence of chronic pain at 3 months (14.9% vs. 31.8%, P = 0.039), needed less intraoperative opioids (fentanyl $1.61{\mu}g/kg/hr$ vs. $3.3{\mu}g/kg/hr$, P < 0.001) and had less postoperative pain (3 vs. 4, P = 0.017). Conclusions: The PECS block might play an important role in lowering incidence of chronic pain, but further studies are needed.