• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.173-178
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• 2019

In this study, we demonstrated a characterization of ${\alpha}-Ga_2O_3$ grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An ${\alpha}-Ga_2O_3$ was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of ${\alpha}-Ga_2O_3$ was gradually increased to confirm growth mechanism of ${\alpha}-Ga_2O_3$ grown on the PSS. A growth temperature was changed to $470-550^{\circ}C$. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of ${\alpha}-Ga_2O_3$, due to lateral growth that occurs during the growth process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.149-156
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• 2002

Europium-activated $Ga_2O_3$ phosphor powders were prepared by homogeneous precipitation method. The resulting powders were characterized by means of TG/DTA, XRD, FT-IR and SEM, Two kinds of powders formed were the crystalline GaOOH and the amorphous-like $\gamma$-$Ga_2O_3$ phases. When the urea concentration was below 0,5 M, rod-like micrometer-sized GaOOH powders were formed. They were transformed via $\alpha$-$Ga_2O_3$ to $\beta$-$Ga_2O_3$ phases under heat treatment. On the other hand, the nanometer-sized $\gamma$-$Ga_2O_3$ powders were formed with urea concentrations higher than 1.0 M, and they were directly changed into $\beta$-$Ga_2O_3$.Photoluminescence (PL) spectra were observed at room temperature, and PL intensities of nanometer-sized $Ga_2O_3$ : $Eu^{3+}$ powders around 610 nm were higher than those of micrometer-sized ones.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.25-29
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• 2021

This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga₂O₃ crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga₂O₃ epitaxial layer increased from a Ni electroless plating time of 40 s to 11 ㎛ after growth. In addition, the surface morphologies of the α-Ga₂O₃ epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the ($10{\bar{1}}4$) diffraction patterns decreased with increasing nominal thickness.

• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.10 no.1
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• pp.11-19
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• 2007

Purpose: Henoch-Sch$\"{o}$nlein purpura (HSP) is a systemic vasculitis involving the skin, joints, gastrointestinal tract, and kidney. Although the pathogenesis of HSP is still unclear, tumor necrosis factor (TNF-${\alpha}$) is regarded as an important cytokine contributing to the disease. The goal of this study was to determine the role of TNF-${\alpha}$ in the pathogenesis of HSP, and to evaluate the TNF-${\alpha}$ polymorphism for genetic susceptibility to HSP. Methods: From March 2004 to November 2005, 40 children with HSP and 32 healthy controls were included. Serum TNF-${\alpha}$ levels were measured using the ELISA method during the acute and convalescent phase of HSP. The genotypic and allelic frequencies of the TNF-${\alpha}$ gene polymorphisms at positions -308 and -238 were evaluated in patients and controls. Results: Serum TNF-${\alpha}$ levels were $23.17{\pm}11.31$ pg/mL in the acute phase of children with HSP and $10.56{\pm}5.59$ pg/mL in the convalescent phase (p=0.000). There was no significant correlation between the serum TNF-${\alpha}$ levels and the clinical scores of HSP (r=0.310, p=0.070). The genotypic frequency of the TNF-${\alpha}$ -308 polymorphism in children with HSP was not significantly different compared to healthy controls (GG 80%, GA 20% vs. GG 93.8%, GA 6.2%; p=0.094). The genotypic frequency of the TNF-${\alpha}$ -238 polymorphism in children with HSP was not significantly different (GG 97.5%, GA 2.5% vs. GG 93.8%, GA 6.3%; p=0.429). Conclusion: TNF-${\alpha}$ is assumed to be the main cytokine associated with the pathogenesis of HSP during the acute phase. However, the presence of TNF-${\alpha}$ gene polymorphisms at positions -308 and -238 did not distinguish children with HSP from normal controls.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Natural Product Sciences
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• v.8 no.3
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• pp.77-82
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• 2002

An investigation of the methanolic extract of Maesa lanceolata leaves has led to the isolation of four novel flavonol glycosides characterised as myricetin 3-0-2', 3', 4'-triacetylxylopyranoside (1), quercetin $3-O-{\beta}-3'$, $6'-diacetylglucopyranosyl-(1{\longrightarrow}4)-{\alpha}-2'$, 3'-diacetylrhamnopyranoside (2), myricetin $3-O-xylopyranosyl-(1{\to}3)-{\alpha}-rhamnopyranoside$ (3) and quercetin $3-O-{\beta}-ga1actopyranosyl-(1{\to}4)-{\alpha}-rhamnopyranoside-7-O-{\beta}-galactopyranoside$ (4). Also isolated from the same extract were known flavonols; quercetin (5), myricetin (6), quercetin 3-O-xylopyranoside (7), quercetin $3-O-{\alpha}-rhamnopyranoside$ (8), myricetin $3-O-{\alpha}-rhamnopyranoside$ (9), myricetin $3-O-{\beta}-galactopyranoside$ (10) and quercetin 3-O-rutinoside (11).

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.575-580
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• 2012

The purpose of this study is to investigate the crystalline structure and optical properties of (GaZn)(NO) powders prepared by solid-state reaction between GaOOH and ZnO mixture under $NH_3$ gas flow. While ammoniation of the GaOOH and ZnO mixture successfully produces the single phase of (GaZn)(NO) solid solution within a GaOOH rich composition of under 50 mol% of ZnO content, this process also produces a powder with coexisting (GaZn)(NO) and ZnO in a ZnO rich composition over 50 mol%. The GaOOH in the starting material was phase-transformed to ${\alpha}$-, ${\beta}-Ga_2O_3$ in the $NH_3$ environment; it was then reacted with ZnO to produce $ZnGa_2O_4$. Finally, the exchange reaction between nitrogen and oxygen atoms at the $ZnGa_2O_4$ powder surface forms a (GaZn)(NO) solid solution. Photoluminescence spectra from the (GaZn)(NO) solid solution consisted of oxygen-related red-emission bands and yellow-, green- and blue-emission bands from the Zn acceptor energy levels in the energy bandgap of the (GaZn)(NO) solid solutions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.40-44
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• 2022

Wet etching of α-Ga₂O₃ epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga₂O₃ etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75℃, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga₂O₃ in the 35 % HCl solution was dominated by the reaction-limited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.