• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.53-57
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• 2006

This paper describes a novel processing technique for fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for super-temperature MEMS applications. PDMS (polydimethylsiloxane) mold is fabricated on SU-8 photoresist using standard UV photolithographic process. Liquid precursor is injected into the PDMS mold. Finally, solid polymer structure is cross-linked using HIP (hot isostatic pressure) at $400^{\circ}C$, 205 bar. Optimum pyrolysis and annealing conditions are determined to form a ceramic microstructure capable of withstanding over $1400^{\circ}C$. The fabricated SiCN ceramic microstructure has excellent characteristics, such as shear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}{\Omega}$) and BDV (min. 1.2 kV) under optimum process condition. These fabricated SiCN ceramic microstructures have greater electric and physical characteristics than bulk Si wafer. The fabricated SiCN microstructures would be applied for supertemperature MEMS applications such as heat exchanger and combustion chamber.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1055-1061
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• 2003

A study has been made of surface modification of various organic materials by ion implantation to increase the surface electrical properties. The substrate used were PP(polypropylene), PET(polyethylene teraphthalate), ECOP(ethylene copolyester), PS(polystyrene). N$_2$, Ar ion implantation was performed at energies of 40 and 50keV with fluences from 5${\times}$ 10$\^$15/ to 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$ with and without H$_2$O gas environment. Surface resistance decrease of implanted polymers was affected by ion implantation energy, ion species, atmosphere of chamber and kind of polymer. In result, surface conductivity of polymers irradiated with atmosphere gas H$_2$O was 10 times more higher than normal vacuum atmosphere, but after 90 hours, surface conductivity returned to the without H$_2$O gas atmosphere condition caused by aging effect. After vacuum forming, surface resistance value was changed to over 10$\^$16/$\Omega$/$\square$, because creation of surface cracks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.10-14
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• 2005

Zinc Oxide(ZnO) thin films on Si (100) substrates were deposited by RF magnetron reactive sputtering. The characteristics of zinc oxide thin films with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance were investigated. To analyze a crystallographic properties of the films, $\theta/2{\theta}$ mode X -ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on Ar/$O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7\;{\Omega}cm$ was obtained at a working pressure of 10 mTorr with Ar/$O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/$O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.124-130
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity. and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Journal of Mechanical Science and Technology
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• v.20 no.2
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• pp.286-294
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• 2006

Flows in a ramjet inlet is simulated for the study of the rocket-ramjet transition. The flow is unsteady, two-dimensional axisymmetric, compressible and turbulent. Double time marching method is used for the unsteady calculation and HLLC method is used as a higher order MUSCL method. As for turbulent calculation, $\kappa-\omega$ SST model is used for more accurate viscous calculations. Sinusoidal pressure perturbation is given at the exit and the flow fields at the inlet is studied. The cruise condition as well as the ground test condition are considered. The pressure level for the ground test condition is relatively low and the effect of the pressure perturbation at the combustion chamber is small. The normal shock at the cruise condition is very sensitive to the pressure perturbation and can be easily detached from the cowl when the exit pressure is relatively high. The sudden decrease in the mass flux is observed when the inlet flow becomes subcritical, which can make the inlet incapable. The amplitude of travelling pressure waves becomes larger as the downstream pressure increases, and the wavelength becomes shorter as Mach number increases. The phase difference of the travelling perturbed pressure wave in space is 180 degree.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.228-238
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• 1992

An investigation on the step-coverage of PECVD and $O_3$ ThCVD oxides was undertaken to implement into the void-free inter metal dielectric planarization using multi-chamber system for the submicron double level metallization. At various initial aspect ratios the instantaneous aspect ratios were measured through modelling and experiment by depositing the oxides up to $0.9{\mu}m$ in thickness in order to monitor the onset of void formation. The modelling was found to be in a good agreement with the observed instantaneous aspect ratio of TEOS-based PECVD oxide whose re-entrant angle was less than $5^{\circ}$. It is demonstrated that either keeping the instantaneous aspect ratio of PECVD oxide as a first layer less than a factor of 0.8 or employing Ar sputter etch to create sloped oxide edge ensures the void-free planarization after$O_3$ ThCVD oxide deposition whose step-coverage is superior to PECVD oxide. It has been observed that $O_3$ ThCVD oxide etchback scheme has shown higher yield of via contact chain than non etchback process, with resistance per via contact of $0.1~0.3{\Omega}/{\mu}m^2$.

• Journal of IKEEE
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• v.11 no.4
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• pp.152-157
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• 2007

AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

• Journal of the Korea Organic Resources Recycling Association
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• v.20 no.1
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• pp.41-49
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• 2012

The effects of operating temperature and electrode gap distance on electricity generation were investigated in two-chamber type MFCs. Voltages across the external resistor $(100\;{\Omega})$ were enhanced approximately 1.4 times by the increase of operating temperature from $30^{\circ}C$ to $34^{\circ}C$. The open circuit voltages (OCVs) were increased by the increase of temperature and the maximum power of MFC was obtained at higher current condition by increasing temperature and reducing electrode gap distance. The maximum power densities were enhanced from 1.9 to 2.4 times according to the experimented electrode gap distances by increasing temperature of $4^{\circ}C$. The electricity generation was increased with the decrease of electrode gap distance. The effects of operating temperature and electrode gap distance were closely connected with the internal resistance of MFC system. That is, the increase of temperature and decrease of electrode gap distance reduced the internal resistance of MFC, resulting in the enhancement of electricity generation of MFC.

• Journal of the Korea Society for Simulation
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• v.28 no.2
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• pp.1-14
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• 2019

A full scale hydrodynamic simulation that requires an accurate reproduction of shock-induced detonation was conducted for design of an energetic component system. A detailed hydrodynamic analysis SW was developed to validate the reactive flow model for predicting the shock propagation in a train configuration and to quantify the shock sensitivity of the energetic materials. The pyrotechnic device is composed of four main components, namely a donor unit (HNS+HMX), a bulkhead (STS), an acceptor explosive (RDX), and a propellant (BPN) for gas generation. The pressurized gases generated from the burning propellant were purged into a 10 cc release chamber for study of the inherent oscillatory flow induced by the interferences between shock and rarefaction waves. The pressure fluctuations measured from experiment and calculation were investigated to further validate the peculiar peak at specific characteristic frequency (${\omega}_c=8.3kHz$). In this paper, a step-by-step numerical description of detonation of high explosive components, deflagration of propellant component, and deformation of metal component is given in order to facilitate the proper implementation of the outlined formulation into a shock physics code for a full scale hydrodynamic simulation of the energetic component system.