• Title/Summary/Keyword: $\alpha$-$Al_2$$O_3$

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Effect of TiB$_2$on Properties of SiC Electroconductive Ceramic Composites (SiC 전도성 세라믹 복합체의 특성에 미치는 TiB$_2$의 영향)

  • Sin, Yong-Deok;Park, Mi-Rim;So, Byeong-Mun;Lee, Dong-Mun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.4
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    • pp.141-146
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    • 2002
  • The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.

The Growth and Characterization of GaN Films by Direct reaction of Ga and $NH_3$ (금속 갈륨과 암모니아의 직접반응에 의한 GaN 후막성장과 특성 연구)

  • Yang, Seung-Hyeon;Nam, Gi-Seok;Im, Gi-Yeong;Yang, Yeong-Seok
    • Korean Journal of Materials Research
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    • v.10 no.3
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    • pp.241-245
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    • 2000
  • Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

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Influence of surface modification techniques on shear bond strength between different zirconia cores and veneering ceramics

  • Mosharraf, Ramin;Rismanchian, Mansour;Savabi, Omid;Ashtiani, Alireza Hashemi
    • The Journal of Advanced Prosthodontics
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    • v.3 no.4
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    • pp.221-228
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    • 2011
  • PURPOSE. Veneering porcelain might be delaminated from underlying zirconia-based ceramics. The aim of this study was the evaluation of the effect of different surface treatments and type of zirconia (white or colored) on shear bond strength (SBS) of zirconia core and its veneering porcelain. MATERIALS AND METHODS. Eighty zirconia disks (40 white and 40 colored; 10 mm in diameter and 4 mm thick) were treated with three different mechanical surface conditioning methods (Sandblasting with $110{\mu}m$ $Al_2O_3$ particle, grinding, sandblasting and liner application). One group had received no treatment. These disks were veneered with 3 mm thick and 5 mm diameter Cercon Ceram Kiss porcelain and SBS test was conducted (cross-head speed = 1 mm/min). Two and one way ANOVA, Tukey's HSD Past hoc, and T- test were selected to analyzed the data (${\alpha}=0.05$). RESULTS. In this study, the factor of different types of zirconia ceramics (P=.462) had no significant effect on SBS, but the factors of different surface modification techniques (P=.005) and interaction effect (P=.018) had a significant effect on SBS. Within colored zirconia group, there were no significant differences in mean SBS among the four surface treatment subgroups (P=0.183). Within white zirconia group, "Ground group" exhibited a significantly lower SBS value than "as milled" or control (P=0.001) and liner (P=.05) groups. CONCLUSION. Type of zirconia did not have any effect on bond strength between zirconia core and veneer ceramic. Surface treatment had different effects on the SBS of the different zirconia types and grinding dramatically decreased the SBS of white zirconia- porcelain.

Zeolite Membrane for High Temperature Gas Separation

  • Li, G.;Kikuchi, E.;Matsukata, M.
    • Proceedings of the Membrane Society of Korea Conference
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    • 2004.05a
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    • pp.86-89
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    • 2004
  • The present study reports the preparation of a compact ZSM-5 membrane showing high thermal stability and high separation factors, especially n-/i-butane isomers at high temperatures. ZSM-5 membrane was prepared on a porous $\alpha$-Al$_2$O$_3$ tube (an average pore diameter, ca. 100 nm) at 18$0^{\circ}C$ by the seed-assisted crystallization method. The XRD and SEM results showed that a thin zeolite layer (ca. 1 ${\mu}{\textrm}{m}$) was formed on the support surface. The single gas permeances of $N_2$, H$_2$, SF$_{6}$, n-butane, and i-butane were taken at 27$0^{\circ}C$. i-Butane permeance hardly changed after repeated thermal treatments up to 40$0^{\circ}C$, indicating the membrane is thermally stable. On the other hand, other single gas permeances increased when the membrane was further dried at 40$0^{\circ}C$, indicating thermal pretreatment at 27$0^{\circ}C$ could not remove all the adsorbed species in the membrane. i-Butane and SF$_{6}$ permeances were significantly lower than the permeances of smaller molecules, indicating that the membrane has a low concentration of defects. The ideal selectivities at 27$0^{\circ}C$ were 61 for $H_2$/i-butane and 47 for $H_2$/SF$_{6}$. The temperature dependency of n/i-butane ideal selectivities and separation factors for an equimolar n/i-butane mixture was studied. The ideal selectivity showed a maximum of 36 at 30$0^{\circ}C$. The separation factors increased with temperature and reached around 12 at 300-40$0^{\circ}C$, which were much higher than those reported in the literature.ature.

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Evaluation of shear-bond strength between different self-adhesive resin cements with phosphate monomer and zirconia ceramic before and after thermocycling (인산염계 기능성 단량체가 첨가된 수종의 자가 접착 레진시멘트와 지르코니아 세라믹 사이 열순환 전후 전단결합강도 비교)

  • Lee, Ji-Hun;Kim, Min-Kyung;Lee, Jung-Jin;Ahn, Seung-Geun;Park, Ju-Mi;Seo, Jae-Min
    • The Journal of Korean Academy of Prosthodontics
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    • v.53 no.4
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    • pp.318-324
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    • 2015
  • Purpose: This study compared shear bond strengths of five self-adhesive cements with phosphate monomer to zirconium oxide ceramic with and without airborn particle abrasion. Materials and methods: One hundred zirconia samples were air-abraded ($50{\mu}mAl_2O_3$). One hundred composite resin cylinders were fabricated. Composite cylinders were bonded to the zirconia samples with either Permacem 2.0 (P), $Clearfil^{TM}$ SA Luting (C), $Multilink^{(R)}$ Speed (M), $RelyX^{TM}$ U200 Automix (R), G-Cem $LinkAce^{TM}$ (G). All bonded specimens were stored in distilled water ($37^{\circ}C$) for 24 h and half of them were additionally aged by thermocycling ($5^{\circ}C$, $55^{\circ}C$, 5,000 times). The bonded specimens were loaded in shear force until fracture (1 mm/min) by using Universal Testing Machine (Model 4201, Instron Co, Canton, MA, USA). The failure sites were inspected under field-emission scanning electron microscopy. The data was analyzed with ANOVA, Tukey HSD post-hoc test and paired samples t-test ($\alpha$=.05). Results: Before and after thermocycling, $Multilink^{(R)}$ Speed (M) revealed higher shear-bond strength than the other cements. G-Cem $LinkAce^{TM}$ (G) showed significantly lower bond strengths after thermocycling than before treatment (P<.05), but the other groups were not significantly different (P>.05). Conclusion: Most self-adhesive cements with phosphate monomer showed high shear bond strength with zirconia ceramic and weren't influenced by thermocycling, so they seem to valuable to zirconia ceramic bonding.

How will surface treatments affect the translucency of porcelain laminate veneers?

  • Turgut, Sedanur;Bagis, Bora;Ayaz, Elif Aydogan;Korkmaz, Fatih Mehmet;Ulusoy, Kivanc Utku;Bagis, Yildirim Hakan
    • The Journal of Advanced Prosthodontics
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    • v.6 no.1
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    • pp.8-13
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    • 2014
  • PURPOSE. The purpose of this study was to evaluate whether surface treatments affect the translucency of laminate veneers with different shades and thicknesses. MATERIALS AND METHODS. A total of 224 disc-shaped ceramic veneers were prepared from A1, A3, HT (High Translucent) and HO (High Opaque) shades of IPS e.max Press (Ivoclar Vivadent) with 0.5 mm and 1.0 mm thicknesses. The ceramics were divided into four groups for surface treatments. Group C: no surface treatments; Group HF: etched with hydrofluoric acid; Group SB: sandblasted with 50-${\mu}m$ $Al_2O_3$; and Group L; irradiated with an Er;YAG laser. A translucent shade of resin cement (Rely X Veneer, 3M ESPE) was chosen for cementation. The color values of the veneers were measured with a colorimeter and translucency parameter (TP) values were calculated. A three-way ANOVA with interactions for TP values was performed and Bonferroni tests were used when appropriate (${\alpha}=0.05$). RESULTS. There were significant interactions between the surface treatments, ceramic shades and thicknesses (P=.001). For the 0.5-mm-thick specimens there were significant differences after the SB and L treatments. There was no significant difference between the HF and C treatments for any shades or thicknesses (P>.05). For the 1-mm-thick ceramics, there was only a significant difference between the L and C treatments for the HT shade ceramics (P=.01). There were also significant differences between the SB and C treatments except not for the HO shades (P=.768). CONCLUSION. The SB and L treatments caused laminate veneers to become more opaque; however, HF treatment did not affect the TP values. When the laminate veneers were thinner, both the shade of the ceramic and the SB and laser treatments had a greater effect on the TP values.

Comparison of Newton's and Euler's Algorithm in a Compound Pendulum (복합진자 모형의 뉴튼.오일러 알고리즘 비교)

  • Hah, Chong-Ku
    • Korean Journal of Applied Biomechanics
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    • v.16 no.3
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    • pp.1-7
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    • 2006
  • The Primary type of swinging motion in human movement is that which is characteristic of a pendulum. The two types of pendulums are identified as simple and compound. A simple pendulum consist of a small body suspended by a relatively long cord. Its total mass is contained within the bob. The cord is not considered to have mass. A compound pendulum, on the other hand, is any pendulum such as the human body swinging by hands from a horizontal bar. Therefore a compound pendulum depicts important motions that are harmonic, periodic, and oscillatory. In this paper one discusses and compares two algorithms of Newton's method(F = m a) and Euler's method (M = $I{\times}{\alpha}$) in compound pendulum. Through exercise model such as human body with weight(m = 50 kg), body length(L = 1.5m), and center of gravity ($L_c$ = 0.4119L) from proximal end swinging by hands from a horizontal bar, one finds kinematic variables(angle displacement / velocity / acceleration), and simulates kinematic variables by changing body lengths and body mass. BSP by Clauser et al.(1969) & Chandler et al.(1975) is used to find moment of inertia of the compound pendulum. The radius of gyration about center of gravity (CoG) is $k_c\;=\;K_c{\times}L$ (단, k= radius of gyration, K= radius of gyration /segment length), and then moment of inertia about center of gravity(CoG) becomes $I_c\;=\;m\;k_c^2$. Finally, moment of inertia about Z-axis by parallel theorem becomes $I_o\;=\;I_c\;+\;m\;k^2$. The two-order ordinary differential equations of models are solved by ND function of numeric analysis method in Mathematica5.1. The results are as follows; First, The complexity of Newton's method is much more complex than that of Euler's method Second, one could be find kinematic variables according to changing body lengths(L = 1.3 / 1.7 m) and periods are increased by body length increment(L = 1.3 / 1.5 / 1.7 m). Third, one could be find that periods are not changing by means of changing mass(m = 50 / 55 / 60 kg). Conclusively, one is intended to meditate the possibility of applying a compound pendulum to sports(balling, golf, gymnastics and so on) necessary swinging motions. Further improvements to the study could be to apply Euler's method to real motions and one would be able to develop the simulator.

자화된 $SF_6$ 유도결합형 플라즈마를 이용한 SiC 식각 특성에 관한 연구

  • 이효영;김동우;박병재;염근영
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.05a
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    • pp.14-14
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    • 2003
  • Silicon carbide (SiC)는 높은 power 영역과 높은 온도영역에서도 작동 가능한 우수한 반도체 물질이다. 또한 우수한 열적 화학적, 안정성을 가지고 있어 가흑한 조건에서의 소자로써도 사용 가능하다. 현재 SiC 적용분야로는 우수한 전기적, 기계적 성질을 이용한 미세소자(MEMS)와 GaN 와 거의 유사한 격자상수를 가지는 것을 이용한 GaN epitaxial 성장의 기판으로도 사용되어진다. 그러나 SiC 는 기존의 습식식각 용매에 대해 화학적 안정성을 가지고 있기 때문에 전자소자의 제작에 있어서 플라즈마를 이용한 건식식각의 중요성이 대두되어지고 있다. 소자제작에 있어 이러한 건식식각시 식각 단면의 제어, 이온에 의한 낮은 손상 정도, 매끄러운 식각 표면, 그리고 고속의 식각 속도둥이 요구되어진다. 본 실험에서는 식각 속도의 증가와 수직한 식각 단면둥을 획득하기 위하여 SF6 플라즈마에서 Source power, dc bias voltage, 그리고 외부에서 인가되는 자속의 세기를 변화시쳐가며 식각 속도, 식각 마스크와의 식각 션택비, 식각 단면둥과 같은 SiC 의 식각 특성을 관찰하였다. 식각 후 식각 단면은 주사전자 현미경(SEM)을 통해 관찰하였다. 본 실험에서의 가장 높은 식각 속도는 분당 1850n 로써 이때의 공정조건은 1400W 의 inductive power, -600V 의 dc bias voltage, 20G 의 외부자속 세기이었다. 또한, 높은 inductive power 조건과 낮은 dc bias voltage 조건에서 Cu는 $SF_6$ 플라즈마 내에서 식각부산물의 증착으로 인해 SiC 와 무한대의 식각선택비를 보였다. 이러한 Cu 마스크를 사용한 SiC 의 식각에서는 식각 후 수직한 식각 단변을 관찰할 수 있었다. 것올 알 수 있다. 따라서, 기존의 pve 보다 세라믹 기판의 경우가 수분 흡수율이 높아 더 오랫동안 전류를 흐르게 하여 방식성이 개선된 것으로 판단된다.을 통해 경도가 증가한 시편의 경우 석출상의 크기가 5nm 이하로 매우 작고 대체로 기지와 연속적인 계면을 형성하나, 열처리가 진행될수록 석 출상의 크기가 커지고 임계크기 이상에 이르면 연속적인 계면은 거의 발견되지 않고, 대부 분 불연속적이고 확연한 계면을 형성함을 관찰 할 수 있었다. 알루미나(${\alpha}-Al_2O_3$) 기판 위에 증착한 $(Ti_{1-x}AI_{x})N$ 피막은 마찬가지로 (200) 우선 방위를 나타내었으나, 그 입자의 크기가 수십 nm로 고속도강위에 증착한 피막에 비해 상당히 크게 형성되었다. 또한 열처리 후에 AIN의 석출이 진행됨에도 불구하고 경도 증가는 나타나지 않고, 열처리가 진행됨에 따라 경도가 감소하는 양상만을 나타내었다. 결국 $(Ti_{1-x}AI_{x})N$ 피막이 열처리 전후에 보아는 기계적 특성의 변화 양상은 열역학적으로 안정한 Wurzite-AlN의 석출에 따른 것으로 AlN 석출상의 크기에 의존하며, 또한 이러한 영향은 $(Ti_{1-x}AI_{x})N$ 피막에 존재하는 AI의 함량이 높고, 초기에 증착된 막의 업자 크기가 작을 수록 클 것으로 여겨진다. 그리고 환경의 의미의 차이에 따라 경관의 미학적 평가가 달라진 것으로 나타났다.corner$적 의도에 의한 경관구성의 일면을 확인할수 있지만 엄밀히 생각하여 보면 이러한 예의 경우도 최락의 총체적인 외형은 마찬가지로 $\ulcorner$순응$\lrcorner$의 범위를 벗어나지 않는다. 그렇기 때문에

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Effects of Chemical Composition and Particle Size of Starting Aluminum Source on the Spheroidization in the Flame Fusion Process (화염용융법에 의한 구상 알루미나 제조에 미치는 초기 알루미나 원료의 화학조성과 입도의 영향)

  • Eom, Sun-Hui;Pee, Jae-Hwan;Lee, Jong-Keun;Hwang, Kwang-Taek;Cho, Woo-Seok;Kim, Kyeong-Ja
    • Journal of Powder Materials
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    • v.16 no.6
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    • pp.431-437
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    • 2009
  • Various inorganic fillers improve the thermal conductivity and physical properties of organic products. Alumina has been used a representative filler in the heat radiation sheet for the heat radiation of electric device. The high filling rate of alumina increases the thermal conductivity and properties of products. We successfully developed the spherical alumina by flame fusion process using the oxygen burner with LPG fuel. In the high temperature flame (2500$\sim$3000$^{\circ}C$) of oxygen burner, sprayed powders were melting and then rotated by carrier gas. This surface melting and rotation process made spherical alumina. Especially effects of chemical composition and particle size of stating materials on the melting behavior of starting materials in the flame and spheroidization ratio were investigated. As a result, spheroidization ratio of boehmite and aluminum hydroxide with endothermic reaction of dehydration process was lower than that of the sintered alumina without dehydration reaction.

Chemical Mechanical Polishing: A Selective Review of R&D Trends in Abrasive Particle Behaviors and Wafer Materials (화학기계적 연마기술 연구개발 동향: 입자 거동과 기판소재를 중심으로)

  • Lee, Hyunseop;Sung, In-Ha
    • Tribology and Lubricants
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    • v.35 no.5
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    • pp.274-285
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    • 2019
  • Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.