First-principles calculations were carried out to investigate the effects of Al impurities on bcc Fe magnetism by considering SOC. No significant solid solution hardening effect was found. Albeit the effects of the SOC by Al on spin magnetic moments were minor, there are sizeable orbital magnetic effects. It is concluded that the orbital magnetism due to the Al impurity is strongly related with the impurity screening of the system as seen in Si impurity case [3], but the effects of Al impurity is stronger than those of Si impurity in terms of orbital magnetism.

First-principles calculations were carried out to investigate the crystal stability and magnetism of $Fe_{16}C_2$ and $Fe_{16}C_2$. Our precise calculations show that the structure of high carbon phase is $Fe_{16}C_2$ and this structure is more stable in the ferromagnetic state than the nonmagnetic state. The Fe atoms induced negative magnetic moment at the C atoms, which interact with the nearest Fe atoms.

A model system allowing the experimental determination of the spin-motive force from the vortex gyration motion in a circular nanodisk is presented. It provide an easy experimental detection of the spin-motive force and thus an important tool to study the relationship between the charge and spin transports in ferromagnetic system.

To summarize, we observed a spatial distribution of damping tensor gives a different simulation result. When we use LLG equation, especially dealing with spatially-varying magnetization texture, it is expected that damping tensor should be considered instead of constant damping.

We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of $125{\pm}5^{\circ}C$ and the MgO matches the Ge with a cell ratio of $\sqrt{2}$:1 which renders MgO rotated by $45^{\circ}$ relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100] || MgO(001)[110] || Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is $1430{\pm}20$ emu/cc, which is comparable to the value of bulk CoFe.

Magnetic and magnetotransport properties of (1-x) $La_{0.7}Sr_{0.3}MnO_3-xRE_2O_3$ (RE=La, Nd) (x = 0.025, 0.05, 0.075, 0.1, 0.2, 0.3) composite polycrystalline samples were systematically studied. Samples were prepared using conventional solid-state reaction. LSMO and $RE_2O_3$ react at high temperature and become chemically compatible. The ferromagnetic-paramagnetic transition temperatures ($T_c$) of the LSMO-$Nd_2O_3$ composite samples were decreased 313K~349K with increasing x, while the $T_c$ values of the LSMO-$La_2O_3$ composite samples were almost unaltered in the range of 355K~358K, representing that the ferromagnetism of LSMO might be more seriously degraded by Nd substitution on the ($La_{0.7}Sr_{0.3}$) site. However, LSMO-$RE_2O_3$ composite samples exhibit greatly enhanced low field magnetoresistance (LFMR) and dMR/dH value without an appreciable increase in its resistivity. Remarkably improved LFMR properties are attributed to LSMO grain boundaries acting as effective spin-dependent scattering centers. The relationship among the $RE_2O_3$ addition, microstructure, magnetic and magnetotransport properties will be discussed in this paper.

We report on the epitaxial growth of tetragonal $DO_{22}$-type Mn3Ga films on GaSb (001) using molecular beam epitaxy and the related structural and magnetic properties. The as-studied $Mn_3Ga$ film was found to exhibit relatively small coercivity around 400 Oe, which differs greatly from the hard magnetic properties of $Mn_3Ga$ bulk specimen or films that are normally reported. This difference was probably attributed to the effects of the GaSb (001) substrate that forced the $Mn_3Ga$ film to be two-dimensionlly stabilized in the (114) orientation and thus led to the modified intrinsic properties of $Mn_3Ga$ films. The growth orientation of the Mn3Ga (114)//GaSb (001) also caused the easy magnetocrystalline direction located in the film plane due to the dominant shape anisotropy in the thin films.

The magnetic properties and structure of FeRh thin film pitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380K. Both M-T curve and d-spacing changes correspond to each other very closely.

A GMI magnetic field sensor working based on time-coded principle has been investigated and designed. The laboratory model has been constructed and tested carefully, demonstrating the sensitivity of $3\;{\mu}s/{\mu}T$ in the field range of ${\pm}100\;{\mu}T$. An amorphous thin wire, $100\;{\mu}m$ in diameter ${\times}50\;mm$ in length, was chosen to be sensing element which was fit into a small field modulation coil of 60 mm in length. The sensor is working based on a time-coded principle that, with the magnetic field modulation was chosen in range of hundreds of Hz, the change in time interval of two adjacent GMI peaks relating to external DC magnetic field is proportional to the intensity of the external field to be measured. This mechanism has made a great improvement to the linearity of the sensor.