An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

BiNbO$_{4}$ ceramics with 0.07wt% V$_{2}$O$_{5}$ and 0.03wt% CuO (BNC3V7) sintered at 900 .deg. C where it is possible for these to be co-fired with ag electronde. Dielectric constant of 44.3 TCF (Thermal Coefficient of resonance Frequency) of 2 ppm/.deg. C and Qxf value 22,000 GHz can be obtained from BNC3V7. the laminatedchip LC filter is indispensible to the minimaturization of PCS (Personal Communication System) terminals. Therefore, multilayer type BPF has been fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at 900.deg. C werecomparedwith the designed ones. for Band Pass Filter widths was similar that ofdesigned ones. For Low Pass Filter (LPF), insertion loss value of band pass widths (2.4 dB) which is a few higher than that of designed (1dB), but characteristization of band pass widths was similar that of designed ones.s.of designed ones.s.

Approximations inherent in the Cohn synthesis theory, which is generally perferree as a convinient design technique for direct-couple waveguide filter, results in considerable devications from the required responses as the design bandwidth increases. In this paper, two main deviations likely to occur in practice are examined using the mode-matching technique. They are a shift in couoff frquencies and large return loss occuring near coutoff frequencyles. Using the power loss ratio, the first effect is corrected to the resulant filter structure from cohn synthesis. In order to show the validity of the intorduced approackes. Ka-band waveguide filter ahs been designed and manufactored. The experimental curve follow the expected curves after corrections fairly closly.

The far-zone magnetic field patterns of a E-plane horn antenna with various edge structures are analyzed using UTD. The ray tracing method is used to lacate the shadow boundaries, and then GO and UTD are utilized to evaluate the incident, reflected, diffracted, surface diffaracted, and the second order diffracted, diffracted-reflected, and diffracted-reflected-diffracted waves existing in each region of interest. By doing this, we analyzed the effects of flanges or caps connected on the edge of a horn antenna on the side lobe and back lobe levels. Also, the validity of this paper is proved by comparing the analytical results with those of measurement and method of moment presented in the reference.

Remez exchange algorithm was applied to realize an IF SAW filter for CDMA cellular phone systems. A SAW filter with withdrawal weighted transducers was simulated and then fabricated on 42.75.deg. ST-cut Quaritz wafer. Excellent agreement wasobtained between calculated andmeasured responses. Fabricated SAWfilterswere mounted on ceramic SMD package for reducing their size and volume. SAW filters were measured under matched circuit. As a result, 5 dB bandwidth of 1.32 MHz, 33dB bandwidth of 1.76 MHz, insertion loss of 13.8 dB and peak to peak ripple at passband of 0.26 dB were obtained. Linear group delay responses at passband were also obtained. These characteristics were good for practical use of IF SAW filter for CDMA system.

Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstald and transmission resonance. We have found taht the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage andthe leakage can be suppreassed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant. These calculation results will be helpful for designing and flip-chip packagaing of high-frequency integrated circuits.

As to power combining system, it is very important to achieve a high combining efficiency in order to minimize theamount of prime power needed and hence the cooling requirements, all of which translate into reduced cost. The combining efficiency is degraded in practice by variation in the amplitude and phase of the signals to be combined. In this paper, the new power combining newtork is proposed and realized which has the automatic gain and phase control system. This control system makes amplituede and phase variation of its all path equal. When the amplitude and phase variations are within 0~5dB and .+-.50.deg., the results show that high combining efficiency is maintained.

The purpose of this paper is to meausre the electrophotographic characteristics of double-layered organic photoreceptor and to evaluate an application for the laser beam printer drum. The characte carrier generation layer(CGL) of double-layered photoreceptor was fabricated with .tau.-H$_{2}$Pc which has high photosensitivity in the near-infrareed region(thickness is about 0.3.mu.m), and Oxadiazole derivative was chosen as a charge carrier transport layer(CTL) because of its high hole mobility. To observe the electrophotographic characteristics of the photoreceptor, we measured the charge acceptance, dark-decay ratio, residual potential after light irradiation. From the result of this study, proper thickness of CTL was about 10.mu.m. Also it's realized that electrophotographic characteristics of the photoreceptor were depend on the thickness of the CTL and the initial surface potential.

The electrical performance of a package is extremely important for high speed digital system operations. CSP(chip scale package) is known to have better electrical performance than the convnetional packages. In this paper, the electrical performance of the BLP(bottom leaded plastic) package, a kind of CSP, has been alayzed by both simulation and real measurement. The electrical perfdormance of a BLP was compared with that of the conventioanl TSOP(thin small outline package). The leadinductanceand lead capacitance were used for the comparison purposes. The new BLP design provides much better electrical performance that TSOP package. It has about 40% favorable parameter values.

In this paper, algeration of electical characteristics is analyzed when the operating temperature of MOSFET, BJT and CMOS/BiCMOS inverter is lowered from 300K to 77K. As the operating temperature is lowered, electric characteristics of MOSFET are enhanced generally but, those of bipolar transistor are degraded because current gain is reduced by BGN(Band Gap Narrowing) effect. For the inverter considered in this work, switching characteristics of PSA-BiCMOS inverter are enhanced by the electrical characteristics enhancement of MOSFET when the operating temperature is reduced to 200K, while under 200K, those of PSA-BiCMOS inverter are degraded because the degradation of BJT impacts on the inverter circuit.

A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

A program was developed to analyze the electrical characteristics and harmonic distrotion in a two-dimensional silicon BJT. The finite difference equations of the small signal and its second and thired harmonics for basic semiconductor equations are formulated treating the nonlinearity and time dependence with Volterra series and Taylor series. The soluations for three sets of simultaneous equations were obtained sequantially by a decoupled iteration method and each set was solved by a modified Stone's algorithm. Distortion magins and ac parameters such as input impedance and current gains are calculated with frequency and load resistance as parameters. The distortion margin vs. load resistancecurves show cancellation minima when the pahse of output voltage shifts. It is shown that the distortionof small signal characteristics can be reduced by reducing the base width, increasing the emitter stripe length and reducing the collector epitaxial layer doping concentration in the silicon BJT structure. The simulation program called TRADAP can be used for the design and optimization of transistors and circuits as well as for the calculation of small signal and distortion solutions.

Pyoelectric infrared detectors based on La-modified PbTiO3 (PLT) thin films have been fabricated by RF magnetron sputtering and micromachining technology. The detectors form Pb$_{1-x}$ La$_{x}$Ti$_{1-x}$ O$_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal struture that no poling trealization for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polyimide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively eteched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of 8.5*10$^{8}$ cm..root.Hz/W at room temperature and it is about 100 times higher than the case of micromachining technology is not used. a sensing system that detects the position as well as the existence of a human body is realized using the array sensor.sor.

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.