• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.221.2-221.2
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.89-89
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• 2010

The atomic structure of Sb/Si(5 5 12)-$2{\times}1$ surface, deposited at room temperature (RT) and post-annealed, has been identified by scanning tunneling microscopy and the corresponding interface has been studied by synchrotron core-level photoemission spectroscopy. With 0.3-nm Sb deposition at RT and postannealing at $600^{\circ}C$, the surface has been facetted to (225)-$2{\times}1$ and (112)-$1{\times}1$, and its Si 2p has shown that all the Si 2p surface components have disappeared, while the single Sb-Si interfacial component has appeared. Such results indicate that all of surface Si atoms are replaced by Sb atoms and the charge is transferred from Si to passivating Sb-atoms at the top layer. With subsequent postannealing up to $700^{\circ}C$, the surface has been facetted to (113)-$2{\times}2$ and (335)-$4{\times}2$, still having Sb-Si interfacial component and partially re-exposed Si surface components. From the present study, the role of surfactant atom, Sb, as well as the thermal-stabilization of Sb-passivated high-index Si surface will be exposed. Especially, the key role of the Sb/Si(113)-$2{\times}2$, composed of Rebonded-Dimer-Rebonded atom 1D structures, for stabilization will be discussed.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.125-134
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• 2006

Process & mechanism $\blacklozenge$ The process consists from two steps which are laser processing step and separation steop. $\blacklozenge$ The wavelength of laser beam is transmissible wavelength for the wafer. However, inside of Si wafer is processed due to temperature dependence of optical absorption coefficient Advantage & Application $\blacklozenge$ Advantages are high speed dicing, no debris contaminants, completely dry process, etc. $\blacklozenge$ The cutting edges were fine, The lifetime and endurances did not degrade the device characteristics $\blacklozenge$ A separation of a wafer with DAF was introduced as an application for SiP

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.428-428
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• 2007

최근 고화질 카메라폰이 경박단소화 되는 경향에 따라 Plastic렌즈 또는 구면 Glass렌즈만으로는 요구되는 광학적 성능 구현이 힘들기 때문에 비구면 Glass렌즈에 대한 요구가 증가하고 있다. 이러한 비구면 Glass렌즈는 일반적으로 초경합금 성형용 코어를 이용한 고온압축 성형방식으로 제작되어지기 때문에 코어면의 초정밀 연삭가공 및 코어면 코팅기술 개발이 시급한 상황이다. 한편, 대표적인 난삭재 Silicon Carbide(SiC)는 광학적 특성 및 기계적 특성, 전기적 특성 등 우수한 특성을 가진 재료로서 우주망원경, 레이저 광 및 X선 반사용 미러 등 다종, 다양한 용도로 이용되고 있으며 전기, 전자, 정보, 정밀기기의 급격한 발전으로 SiC의 수요가 급격히 증가하고 있다. 비구면 Glass렌즈 성형용 코어를 SiC소재로 제작할 경우 성형용 코어의 수명향상, 렌즈 생산원가의 절감 및 코팅 과정의 간소화 등의 다양한 장점을 가지므로 SiC를 이용한 성형용 코어의 나노 정밀도급 초정밀 연삭가공기술의 개발이 필요하다. 본 논문에서는 3 메가픽셀, 2.5배 광학 줌 카메라폰 모듈용 비구면 Glass렌즈 개발을 목적으로 실험계획법을 적용하여 초경합금 성형용 코어의 연삭조건을 규명하였다. 초경합금 비구면 성형용 코어의 초정밀 연삭가공조건 및 결과를 바탕으로 난삭재인 Silicon Cabide(SiC)의 연삭가공조건을 구하고 이를 이용하여 비구면 Glass렌즈 성형용 코어를 초정밀 연삭가공하였다.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.41-52
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• 2021

Recently, LNOI photonics technology has attracted attention as a photonics platform capable of integrating ultra-high-speed, low power consumption, and high nonlinearity optical devices, as it is possible to manufacture LiNbO₃ optical waveguides with ultra-low optical loss and a radius of curvature of several tens of micrometers. Here, we will briefly compare various photonics platforms, such as Si, InP, SiN, and LNOI, describe the current research trends of LNOI photonics, and discuss the direction of photonics technology at the conclusion.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.50-56
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• 2006

We investigated the adsorption of benzene and pyridine on $Si(5\;5\;12)-2\times1$ at 80 K by using variable-low temperature scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. The benzene molecule most strongly binds to two adatoms on the D3 and D2 units in a tilted butterfly configuration, which consists of $di-\sigma$ bonds between C atoms and Si adatoms and two C=C double bonds in the benzene molecule Pyridine molecules interact with adatom(s) on the D2 and D3 units through both Si-N dative bonding and $di-\sigma$ bonds. The dative bonding through the lone pair electrons of N atom produces a vertical configuration (pyridine-like), which is more stable than $di-\sigma$ bonds $Di-\sigma$ bonds can be formed either through Si-N1 and Si-C4 or Si-C2 and Si-C5.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.162-167
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• 2010

We investigated the adsorption and desorption characteristics of benzene molecules on $Si(001)-2{\times}n$ surfaces using a variable-low temperature scanning tunneling microscopy. When benzene was adsorbed on a $Si(001)-2{\times}n$ surface at a low coverage, five distinct adsorption configurations were found: tight-binding (TB), standard-butterfly (SB), twisted-bridge, diagonal-bridge, and pedestal. The TB and SB configurations were the most dominant ones and could be reversibly interconverted, diffused, and desorbed by applying an electric field between the tip and the surface. The population ratios of the TB and SB configurations were affected by the benzene coverage: at high coverage, the population ratio of SB increased over that of TB, which was favored at low coverage. The desorption yield decreased with increasing benzene coverage and/or density of vacancy defect. These results suggest that the interaction between the benzene molecules is important at a high coverage, and that the vacancy defects modify the adsorption and desorption energies of the benzene molecules on Si(001) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.328-328
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.327-327
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.222-222
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• 2009