• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.70-76
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• 1999

Analytic model for punchthrough limited breakdown voltage of cylindrical junction is presented as a function of the epitaxial layer thickness and the critical depletion width of the cylindrical junction in nonpunchthrough cases. All the expressions for the distances, electric fields and potentials are normalized, allowing quick determination of the corresponding breakdown voltages. The calculated results are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.136-143
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• 1996

A simple analytic model for the planar junctions with multiple foating field limiting rings(FLR) is presented which yields analytic expressions for the breakdown voltage and optimum ring spacings. the normalized potential of each ring is derived as a function of the normalized depletion width and the ring spacing. Based on the assumption that the breakdwon occurs simulataneously at cylindrical junctions of FLR structure where the peak sruface electric fields are equal, the optimum ring spacings are determined. The resutls are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI and with the experimental data reported. The normalized experessions allow a calculation of breakdown voltage and optimum spacing over a broad range of junction depth and background doping levels.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.27-32
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• 1997

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current desnity ( $J_{p}$) for the accurate digital switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of I $n_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As heterojunction on the InP substrate, is fabricated ot improve PVCR and JP, and then the dependence of I-V charcteristics on the width of the quantum well was investigated.d.ted.d.

• Progress in Superconductivity
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• v.3 no.2
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• pp.163-167
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• 2002

We have fabricated planar-type single-layer second-order high-Tc SQUID gradiometers. The devices consisted of symmetrically designed three parallel-connected square pickup loops that were directly coupled to the SQUID. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ substrate by a PLD system and patterned into a device by the photolithography with ion milling technique. Junctions of the SQUID were either step-edge or bicrystal type. All the structures were formed on a 10 mm $\times$ 5 mm substrate. Balancing of the gradiometer was achieved by adjusting the width of the central pickup loop. The gradiometer noise was measured both inside and outside a magnetically shielded room. Details of the results will be discussed.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1034-1036
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• 2006

In this paper, I used microprocessor and sensor and designed to improve the efficiency of the photovoltaic system the photovoltaic position tracker device, and compared the normal photovoltaic system of fixed form with the photovoltaic system of solar position tracked form. Moreover, compared the catalogue of solar cell module and the simulation through a mathematics modelling with the solar cell's characteristic interpreting and, composed an power conversion system with boost converter and voltage source inverter. Used the constant voltage control method for maximum power point tracking in boost converter control and, used the SPWM(Sinusoidal Pulse Width Modulation) control method in inverter control.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.589-590
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• 2006

A novel Triple-Well P-type Triggered Silicon Controlled Rectifier (TWPTSCR) for on-chip ESD protection implemented with a triple-well CMOS technology is presented. Unlike conventional SCR devices, the proposed TWPTSCR offers a reduced triggering voltage level as well as the enhanced ESD performance of the SCR devices. From the experimental results, the TWPTSCR with a device width of 20um has the triggering voltage of 1.1V.

• ETRI Journal
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• v.25 no.3
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• Journal of Navigation and Port Research
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• v.35 no.7
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• pp.563-568
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• 2011

The various properties such as the electric current distribution, resonant frequency and radiation patterns of open-ended meander slot antenna placed on a small ground plane, are investigated to give the help in performing antenna design. Based upon these characteristics, the designed antenna which is only 22mm($0.06{\lambda}_g$) in height and 31mm($0.09{\lambda}_g$) in width can operate at the 433 MHz with the measured radiation efficiency of 8% and end-fire radiation pattern. These properties make the antenna suitable for the handheld device such as the wireless remote controller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.29-32
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• 1991

Non-volatile SNOSFET memory devices using CMOS 1Mbit design rule(1.2$\mu\textrm{m}$), whose channel width and length are 15${\times}$1.5$\mu\textrm{m}$, 15${\times}$1.5$\mu\textrm{m}$, 2.0${\times}$15$\mu\textrm{m}$ and length are 15${\times}$1.7$\mu\textrm{m}$, respectivley, were fabricated. And the transfer, Id-Vd and switching characteristics of the devices were investigated. As a result, the 15${\times}$1.5$\mu\textrm{m}$ device was good in the transfer characteristics and the switching characteristics were favourable, which had $\Delta$V$\sub$TH/=6.3V by appling pulse voltage of V$\sub$w/=+34V, Tw=50msec.