• Journal of Biomedical Engineering Research
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• v.38 no.6
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• pp.285-290
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• 2017

Radiofrequency catheter ablation is the interventional therapy that be employed to eliminate cardiac tissue caused by arrhythmias. During radiofrequency catheter ablation, The thrombus can occur at electrode tip if the temperature of tissue and electrode is excess $100^{\circ}C$. To prevent this phenomenon, we investigated numerical model of electrode for radiofrequency catheter ablation considering saline irrigation and temperature-controlled radiofrequency system. The numerical model is based on coupled electric-thermal-flow problem and solved by COMSOL Multiphysics software. The results of the models show that the dimensions of the thermal lesion are increased if the flow rate of the saline irrigation and the set temperature are increased. The surface width characterized to determine the thermal lesion isn't need to measure in temperature-controlled radiofrequency system due to convective heat transfer by saline irrigation at tissue-electrode interface.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.28 no.4
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• pp.320-328
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• 2006

Purpose: The aim of this study was to evaluate the effects of pterygomaxillary separation on dimensional changes of dental arch following surgically-assisted rapid maxillary expansion (SARME). Patients and Methods: Eighteen adults who had been treated by SARME for transverse maxillary deficiency from May 2000 to August 2005 were evaluated. Thirteen patients (Group 1) were treated with subtotal Le Fort I osteotomy including pterygomaxillary separation and anterior midpalatal osteotomy. The same operation was performed in five patients (Group 2) except pterygomaxillary separation. Dental study casts were taken before operation and after removal of expansion device. And then, skeletal and dental parameters were measured pre- and post-operatively. Results: 1. Changes of mean interdental width 1) In group 1, mean maxillary interdental width was increased 70%($47{\sim}99%$), 95%($84{\sim}115%$), and 77%($57{\sim}94%$) of total expansion on canine, first premolar, and first molar region, respectively after retention. 2) In group 2, mean maxillary interdental width was increased 77%($59{\sim}100%$), 78%($45{\sim}107%$), and 86%($57{\sim}116%$) of total expansion on canine, first premolar, and first molar region, respectively after retention. 3) There was a statistical difference between the change of interdental width of group 1 and group 2 at first premolar(p<0.05). 2. Changes of mean interalveolar width 1) In group 1, mean maxillary alveolar bone width was increased 66%($42{\sim}84%$), 74%($42{\sim}104%$), and 57%($31{\sim}78%$) of total expansion on canine, first premolar, and first molar region, respectively after retention. 2) In Group 2, mean maxillary alveolar bone width was increased 73%($55{\sim}98%$), 67%($36{\sim}89%$), and 59%($48{\sim}73%$) of total expansion on canine, first premolar, and first molar region, respectively after retention. 3) There were no statistical differences between group 1 and group 2 at each teeth area. Conclusion: These results suggest that SARME without pterygomaxillary separation may allow the relatively equal expansion at both anterior and posterior teeth area and most amounts of maxillary interdental expansions were acquired with the expansion of the maxilla by SARME.

• Progress in Superconductivity
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• v.5 no.1
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• pp.50-54
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• 2003

We have fabricated $∂^2$$B_{z}$ /$∂x^2$ type planar gradiometers and studied their properties in operation under various field conditions. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ (100) substrate by a pulsed laser deposition (PLD) system and patterned into a device by the photolithography with ion milling technique. The device consists of 3 pickup loops designed symmetrically Inner dimension and the width of the square side loops are 3.6 mm and 1.2 mm, respectively, and the corresponding dimensions of the center loop are 2.0 mm and 1.13 mm. The length of baseline gradiometer is 5.8 mm. Step-edge junction width is 3.0 $\mu\textrm{m}$ and the hole size of the SQUID loop is 3 $\mu\textrm{m}$ ${\times}$ 52 $\mu\textrm{m}$. The SQUID inductance is estimated to be 35 pH. The device was formed on a 20 mm ${\times}$ 10 mm substrate. We have tested the behavior of the device in various field conditions. The unshielded gradiometer was stable under extremely hostile conditions on a laboratory bench. Noise level 0.45 pT/$\textrm{cm}^2$/(equation omitted)Hz and 0.84 pT/$\textrm{cm}^2$/(equation omitted)Hz at 1 Hz for the shielded and the unshielded cases, which correspond to equivalent field noises of 150 fT/(equation omitted)Hz and 280 fT/(equation omitted)Hz, respectively. In spite of the short baseline of 5.8 mm, the high common-mode-rejection-ratio of the gradiometer, $10^3$, allowed us to successfully record magnetocardiogram of a human subject, which demonstrates the feasibility of the design in biomagnetic studies.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.12
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• pp.2039-2046
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• 2003

Storage tank filled with fluid has unique dynamic characteristics compared to general structures, due to the interaction between fluid and structure. The oscillation of the fluid surface caused by external forces is called sloshing, which occurs in moving vehicles with contained liquid masses, such as trucks, railroad cars, aircrafts, and liquid missles. In this study, the evaluation method for the reduction of sloshing, the optimized size and location of wing and diaphragm baffles are suggested based on the experimental results. The experimental device can simulate the translation motion. A rectangular tank and various baffles are fabricated to study on the sloshing characteristics. The forces measured using the load cell at tank wall and those are compared with each other through the Fourier transformation for various conditions. The study of the sloshing of the rectangular tank equipped with baffles is conducted under the same conditions with non-baffled rectangular tank experiment. From the experimental results, the sloshing reduction effect by the baffles is observed. In conclusion in case of diaphragm baffles, the optimized size ratio of the width of baffle to the water height is 0.44 and the installation location has no effect to the damping of sloshing. In case of wing baffles, the optimized size ratio of the width of baffle to the length of a rectangular tank is 0.1 and the optimized location ratio of the baffle to the water height is 0.9.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.42-45
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• 1999

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.468-473
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• 2009

Selective area epitaxy of multiple-stacked InP/InGaAs structures were grown by chemical beam epitaxy. The width of top of the multiple-stacked InP/InGaAs layer which were selectively grown on the stripe lines parallel to the <011> direction was narrowed, while the width of top of the multiple-stacked InP/InGaAs layer on the stripe lines parallel to the <01-1> was widen. This difference according to the <011> and <01-1> direction was explained by the growth of InGaAs <311>A and B faces on the (100) InP surface on the stripe lines parallel to the <01-1> direction. Under growth rate of $1\;{\mu}m/h$, top of the multiple-stacked InP/InGaAs was flattened as the pressure of group V gas was decreased. This phenomenon was understood by the saturation of group V element on the surface.

• Journal of Periodontal and Implant Science
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• v.30 no.2
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• pp.429-442
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• 2000

Based on current evidence in the literature, it is known that endotoxin is a weakly adherent surface phenomenon and that power-driven instruments can be used to accomplish definitive root detoxification and maximal wound healing without overinstrumentation of root and without extensive cementum removal. And one of the newly developed curette tips used with low power of piezoelectric ultrasonic scaler, is effective to remove calculus and not to remove the excessive cementum. The purpose of this study is therefore, to assess the influence of ultrasonic power and various working parameters on root substitute removal when instrumentation is performed with the curette tip on piezoelectric ultrasonic scaler. This study assessed defect depth, width and area resulting from instrumentation using a piezoelectric ultrasonic scaler with a curette type tip in vitro to acrylic resin block as a root substitute. The working parameters was standardized by the sledge device which controls lateral force(0.5 N, 1 N, 2 N) and instrumentation time(5 sec, 10 sec, 20 sec) and power setting was adjusted 0,2,4,8 in P mode. Power setting had the greatest influence on defect depth compared to lateral force and instrumentation time(standardized regression parameter estimates${\pm}$standard error, $0.37{\pm}0.02$, $0.19{\pm}0.02$, $0.07{\pm}0.02$). The effects on defect area also greatest for power setting($0.57{\pm}0.03$) compared to lateral force and instrumentation time($0.33{\pm}0.03$, $0.12{\pm}0.03$). The effect of the power setting on the defect width($0.15{\pm}0.01$) is not so great as defect depth or defect area compared to lateral force($0.12{\pm}0.01$) and effect of instrumentation time is minimal($0.02{\pm}0.01$). It could be concluded that the power setting has the greatest influence on the defect depth and area in curette type tip with low power of piezoelectric ultrasonic device. Many parameters can be adjusted in various situation in clinical use of piezoelectric ultrasonic scaler but the power setting is the first parameter to be adjusted.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1771-1777
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• 2016

In this thesis, the breakdown voltage characteristics of silicon nanowire N-channel GAA MOSFETs were analyzed through experiments and 3-dimensional device simulation. GAA MOSFETs with the gate length of 250nm, the gate dielectrics thickness of 6nm and the channel width ranged from 400nm to 3.2um were used. The breakdown voltage was decreased with increasing gate voltage but it was increased at high gate voltage. The decrease of breakdown voltage with increasing channel width is believed due to the increased current gain of parasitic transistor, which was resulted from the increased potential in channel center through floating body effects. When the positive charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was decreased due to the increased potential in channel center. When the negative charge was trapped into the gate dielectrics after gate stress, the breakdown voltage was increased due to the decreased potential in channel center. We confirmed that the measurement results were agreed with the device simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.57-58
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• 2008

We have studied an organic layer and semitransparent Al electrode thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top-emission device structure is Al(100nm)/TPD(xnm)/Alq(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total organic layer was varied from 85nm to 165n, a ratio of those two layers was kept to be about 2:3. Semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer total thickness of 140nm. As the thickness of total organic layer increases, the emission spectra show a shift of peak wavelength from 490nm to 580nm, and the full width at half maxima from 90nm to 35nm. The emission spectra show a blue shift as the view angle increases. Emission spectra depending on a transmittance of semitransparent cathode show a shift of peak wavelength from 515nm to 593nm. At this time, the full width at half maximum was about to be a constant of 50nm. With this kind of microcavity effect, we were able to control the emission spectra from the top-emission organic light-emitting diodes.