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http://dx.doi.org/10.5757/JKVS.2009.18.6.468

Selective Epitaxy Growth of Multiple-Stacked InP/InGaAs on the Planar Type by Chemical Beam Epitaxy  

Han, Il-Ki (Nano Device Research Center, Korea Institute of Science and Technology)
Lee, Jung-Il (Nano Device Research Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.6, 2009 , pp. 468-473 More about this Journal
Abstract
Selective area epitaxy of multiple-stacked InP/InGaAs structures were grown by chemical beam epitaxy. The width of top of the multiple-stacked InP/InGaAs layer which were selectively grown on the stripe lines parallel to the <011> direction was narrowed, while the width of top of the multiple-stacked InP/InGaAs layer on the stripe lines parallel to the <01-1> was widen. This difference according to the <011> and <01-1> direction was explained by the growth of InGaAs <311>A and B faces on the (100) InP surface on the stripe lines parallel to the <01-1> direction. Under growth rate of $1\;{\mu}m/h$, top of the multiple-stacked InP/InGaAs was flattened as the pressure of group V gas was decreased. This phenomenon was understood by the saturation of group V element on the surface.
Keywords
Chemical beam epitaxy; Selective area epitaxy; Semiconductor; Growth mechanism;
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