• 제목/요약/키워드: width of device

검색결과 714건 처리시간 0.031초

펄스파워 시스템용 고전압 펄스변압기의 EMTP 시뮬레이션 (A EMTP Simulation of High-Voltage Pulse Transformer for Pulsed Power System)

  • 김민수;이형구;주홍진;고광철;강형부
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1984-1986
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    • 2000
  • In pulsed-power techniques. Marx generator is generally used for the high-power device. but this generator has insulation and spatial problems. So we will suggest a pulse transformer that has a small size to generate the high voltage pulse instead of Marx generator. In this paper, Pulse duration is 4 [${\mu}s$] and the ratio of input and output voltage is 40[kV]/200[kV](step-up ratio=5). The output voltage and the process of pulse compression for pulse circuit are simulated by EMTP (Electro-Magnetic Transient Program). The secondary voltage of pulse transformer is about 200[kV] and pulse width is 4[t/s]. When the secondary winding of the pulse transformer is saturated. the pulse width is 1.25[${\mu}s$]. We selected dummy load 50[$\Omega$] for impedance matching. The pulse voltage of dummy load is 100[kV] and pulse width is 500[ns].

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High-$T_c$ SQUID Application for Roll to Roll Metallic Contaminant Detector

  • Tanaka, S.;Kitamura, Y.;Uchida, Y.;Hatsukade, Y.;Ohtani, T.;Suzuki, S.
    • Progress in Superconductivity
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    • 제14권2호
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    • pp.82-86
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    • 2012
  • A sensitive eight-channel high-Tc Superconducting Interference Device (SQUID) detection system for magnetic contaminant in a lithium ion battery anode was developed. Finding ultra-small metallic foreign matter is an important issue for a manufacturer because metallic contaminants carry the risk of an internal short. When contamination occurs, the manufacturer of the product suffers a great loss from recalling the tainted product. Metallic particles with outer dimensions smaller than 100 microns cannot be detected using a conventional X-ray imaging system. Therefore, a highly sensitive detection system for small foreign matter is required. We have already developed a detection system based on a single-channel SQUID gradiometer and horizontal magnetization. For practical use, the detection width of the system should be increased to at least 65 mm by employing multiple sensors. In this paper, we present an 8-ch high-Tc SQUID roll-to-roll system for inspecting a lithium-ion battery anode with a width of 65 mm. A special microscopic type of a cryostat was developed upon which eight SQUID gradiometers were mounted. As a result, small iron particles of 35 microns on a real lithium-ion battery anode with a width of 70 mm were successfully detected. This system is practical for the detection of contaminants in a lithium ion battery anode sheet.

Numerical Simulation and Experimental Research of the Flow Coefficient of the Nozzle-Flapper Valve Considering Cavitation

  • Li, Lei;Li, Changchun;Zhang, Hengxuan
    • International Journal of Fluid Machinery and Systems
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    • 제10권2호
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    • pp.176-188
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    • 2017
  • The nozzle-flapper valves are widely applied as a pilot stage in aerospace and military system. A subject of the analysis presented in this work is to find out a reasonable range of null clearance between the nozzle and flapper. This paper has presented a numerical flow coefficient simulation. In every design point, a parameterized model is created for flow coefficient simulation and cavitation under different conditions with varying gap width and inlet pressure. Moreover, a new test device has been designed to measure the flow coefficient and for visualized cavitation. The numerical simulation and test results both indicate that cavitation intensity gets fierce initially and shrinks finally as the gap width varies from small to large. From the curve, the flow coefficient mostly has experienced three stages: linear throttle section, transition section and saturation section. The appropriate deflection of flapper is recommended to make the gap width drop into the linear throttle section. The flapper-nozzle null clearance is optionally recommended near the range of $D_N/16$. Finally through simulation it is also concluded that the inlet pressure plays a little role in the influence on the flow coefficient.

Write Characteristics of Silicon Resistive Probe

  • Jung, Young-Ho;Kim, Jun-Soo;Shin, Hyung-Cheol
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.821-824
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    • 2005
  • Probe storage is one of the strong candidates for future mobile storage device since it has potential of recording density over I $Tb/in^2$ with r/w speed over 100 Mbps. It also uses silicon-processing technology that suits the purpose of small form factor. In this paper, write characteristics of resistive probe that can rotate the field direction of PZT by field-induced resistance changes in a small resistive region at the apex of the tip will be presented. Also, the relationship between the size of tip and the available write width is investigated for different source bias conditions. For this study, two-dimensional computer simulation ($SILVACO^{TM}$) was performed. With optimum design, the width of the writing electric field can be smaller than 50nm

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70 nm nMOS의 RF 적용을 위한 transistor matching (Transistor Matching in 70 nm nMOS for RF applications)

  • 최현식;홍승호;정윤하
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.583-584
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    • 2006
  • This paper presents transistor matching in 70 nm nMOS. To adopt radio frequency(RF) applications, the RF performance, especially the current gain cutoff frequency($f_T$), is examined experimentally through a wafer. It is proved that the RF performance variation of 70 nm nMOS is dependent to the device geometry, the total width(W). The RF performance variation of 70 nm nMOS is inversely proportional to square root of total width(W). Also, decreasing of the number of fingers($N_f$) is helpful to decrease the variation of 70 nm nMOS.

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실감형 콘텐츠 작동을 위한 모션 기반 4D 특수효과 장치 제어 (Motion-based Controlling 4D Special Effect Devices to Activate Immersive Contents)

  • 김광진;이칠우
    • 스마트미디어저널
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    • 제8권1호
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    • pp.51-58
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    • 2019
  • 본 논문은 펄스폭 변조(PWM, Pulse Width Modulation) 방법을 이용하여 4D 콘텐츠의 특수효과용 물리장치들을 제어하는 제스처 응용 방법에 대해 기술한다. 적외선 센서를 통해 인식되는 사용자 동작은 3D 콘텐츠 제어를 위한 명령어로 해석되고 특수효과를 발생시키는 장치를 제어하여 물리적인 자극을 사용자에게 재현한다. 이와 같이 NUI(Natural User Interface) 기법을 이용하여 콘텐츠를 제어하게 되면 사용자의 콘텐츠에 대한 직접적인 몰입감이 증대되어 사용자에게 고도의 흥미와 관심을 제공할 수 있다. 제안하는 방법의 효율성을 측정하기 위해 적외선 센서를 이용한 모션인식과 애니메이션 컨트롤러의 파라미터를 제어하여 이벤트를 전달하는 PWM 기반 실시간 선형제어 시스템을 구현하였다.

궤도상을 이동하는 커서 이동시간의 예측 모델 (A Time Prediction Model of Cursor Movement with Path Constraints)

  • 홍승권;김성일
    • 대한산업공학회지
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    • 제31권4호
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    • pp.334-340
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    • 2005
  • A mouse is an important input device that is used in most of all computer works. A mouse control time prediction model was proposed in this study. Especially, the model described the time of mouse control that made a cursor to move within path constraints. The model was developed by a laboratory experiment. Cursor movement times were measured in 36 task conditions; 3 levels of path length, 3 levels of path width and 4 levels of target's width. 12 subjects participated in all conditions. The time of cursor movement with path constraints could be better explained by the combination of Fitts' law with steering law($r^2=0.947$) than by the other models; Fitts' law($r^2=0.740$), Steering law($r^2=0.633$) and Crossman's model($r^2=0.897$). The proposed model is expected to be used in menu design or computer game design.

1100 ${\AA}$의 베이스 폭을 갖는 다결정 실리콘 자기정렬 트랜지스터 특성 연구 (A Study on the Characteristics of PSA Bipolar Transistor with Thin Base Width of 1100 ${\AA}$)

  • 구용서;안철
    • 전자공학회논문지A
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    • 제30A권10호
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    • pp.41-50
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    • 1993
  • This paper describes the fabrication process and electrical characteristics of PSA (Polysilicon Self-Align) bipolar transistors with a thin base width of 1100.angs.. To realize this shallow junction depth, one-step rapid thermal annealing(RTA) technology has been applied instead of conventional furnace annealing process. It has been shown that the series resistances and parasitic capacitances are significantly reduced in the device with emitter area of 1${\times}4{\mu}m^{2}$. The switching speed of 2.4ns/gate was obtained by measuring the minimum propagation delay time in the I$^{2}$L ring oscillator with 31 stages.

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An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

  • Lee, Jae Bin;Suh, Chung Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.473-481
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    • 2012
  • For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

깊이 식각된 다중모드 간섭 영역으로 구성된 광전력 분배기 및 결합기의 설계 (Design of optical power splitters and couplers composed of deeply etched multimode interference section)

  • 김정욱;정영철
    • 전자공학회논문지D
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    • 제34D권4호
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    • pp.62-72
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    • 1997
  • The optical power splitter/couplers based on MMI(multimode interference) in GaAs/AlGaAs are studied. We presetn a design of optical power splitter/couplers, which have deeply etched multimode waveguide. The properties and fabrication tolerance on the etching depth, multimode waveguide width are simulatedusing a FD-BPM (finite difference beam propgation method). Proposed 1*N optical of designed device is 0.7dB smaller than the optical power splitter with a shallowly etched MMI section. For 0.5dB excess loss, the predicted fabrication tolerance is 0.6.mu.m on the multimode waveguide width of the 14 optical power splitter with a deeply etched MMI section. Also excess loss and uniformity of poposed 32*32 optical power coupler are below 0.3dB. The excess loss of proposed 32*32 optical power coupler is 2dB smaller than the optical power coupler with a shallowly etched MMI section. It is shown that the optical power splitters/couplers with a deeply etched mMI section have low loss, good uniformity, and improved fabriction tolerance.

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