Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Transistor Matching in 70 nm nMOS for RF applications

70 nm nMOS의 RF 적용을 위한 transistor matching

  • Choi, Hyun-Sik (Department of Electrical and Electronic Engineering Pohang University of Science and Technology) ;
  • Hong, Seung-Ho (Department of Electrical and Electronic Engineering Pohang University of Science and Technology) ;
  • Jeong, Yoon-Ha (Department of Electrical and Electronic Engineering Pohang University of Science and Technology)
  • 최현식 (포항공과대학교 전자전기공학과) ;
  • 홍승호 (포항공과대학교 전자전기공학과) ;
  • 정윤하 (포항공과대학교 전자전기공학과)
  • Published : 2006.06.21
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Abstract

This paper presents transistor matching in 70 nm nMOS. To adopt radio frequency(RF) applications, the RF performance, especially the current gain cutoff frequency($f_T$), is examined experimentally through a wafer. It is proved that the RF performance variation of 70 nm nMOS is dependent to the device geometry, the total width(W). The RF performance variation of 70 nm nMOS is inversely proportional to square root of total width(W). Also, decreasing of the number of fingers($N_f$) is helpful to decrease the variation of 70 nm nMOS.

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