• 제목/요약/키워드: width of device

검색결과 714건 처리시간 0.032초

Influence of slot width on the performance of multi-stage overtopping wave energy converters

  • Jungrungruengtaworn, Sirirat;Hyun, Beom-Soo
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제9권6호
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    • pp.668-676
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    • 2017
  • A two-dimensional numerical investigation is performed to study the influence of slot width of multi-stage stationary floating overtopping wave energy devices on overtopping flow rate and performance. The hydraulic efficiency based on captured crest energy of different device layouts is compared with that of single-stage device to determine the effect of the geometrical design. The results show optimal trends giving a huge increase in overtopping energy. Plots of efficiency versus the relative slot width show that, for multi-stage devices, the greatest hydraulic efficiency is achieved at an intermediate value of the variable within the parametric range considered, relative slot width of 0.15 and 0.2 depending on design layouts. Moreover, an application of adaptive slot width of multi-stage device is investigated. The numerical results show that the overall hydraulic efficiency of non-adaptive and adaptive slot devices are approximately on par. The effect of adaptive slot width on performance can be negligible.

Influence of neck width on the performance of ADAS device with diamond-shaped hole plates

  • Wu, Yingxiong;Lu, Jianfeng;Chen, Yun
    • Structural Engineering and Mechanics
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    • 제74권1호
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    • pp.19-32
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    • 2020
  • Metallic energy-dissipation dampers are widely used in structures. They are comprised of an added damping and stiffness (ADAS) device with many parallel, diamond-shaped hole plates, the neck width of which is an important parameter. However, no studies have analyzed the neck width's influence on the ADAS device's performance. This study aims to better understand that influence by conducting a pseudo-static test on ADAS, with three different neck widths, and performing finite element analysis (FEA) models. Based on the FEA results and mechanical theory, a design neck width range was proposed. The results showed that when the neck width was within the specified range, the diamond-shaped hole plate achieved an ideal yield state with minimal stress concentration, where the ADAS had an optimal energy dissipation performance and the brittle shear fracture on the neck was avoided. The theoretical values of the ADAS yield loads were in good agreement with the test values. While the theoretical value of the elastic stiffness was lower than the test value, the discrepancy could be reduced with the proposed modified coefficient.

소자 레이아웃이 n-채널 MuGFET의 특성에 미치는 영향 (Effects of Device Layout On The Performances of N-channel MuGFET)

  • 이승민;김진영;유종근;박종태
    • 대한전자공학회논문지SD
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    • 제49권1호
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    • pp.8-14
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    • 2012
  • 전체 채널 폭은 같지만 핀 수와 핀 폭이 다른 n-채널 MuGFET의 특성을 측정 비교 분석하였다. 사용된 소자는 Pi-gate 구조의 MuGFET이며 핀 수가 16이며 핀 폭이 55nm인 소자와 핀 수가 14이며 핀 폭이 80nm인 2 종류의 소자이다. 측정 소자성능은 문턱전압, 이동도, 문턱전압 roll-off, DIBL, inverse subthreshold slope, PBTI, hot carrier 소자열화 및 드레인 항복전압 이다. 측정 결과 핀 폭이 작으며 핀 수가 많은 소자의 단채널 현상이 우수한 것을 알 수 있었다. PBTI에 의한 소자열화는 핀 수가 많은 소자가 심하며 hot carrier에 의한 소자열화는 비슷한 것을 알 수 있었다. 그리고 드레인 항복 전압은 핀 폭이 작고 핀 수가 많은 소자가 높은 것을 알 수 있었다. 단채널 현상과 소자열화 및 드레인 항복전압 특성을 고려하면 MuGFET소자 설계 시 핀 폭을 작게 핀 수를 많게 하는 것이 바람직하다.

핀 폭에 따른 문턱전압 변화를 줄이기 위한 무접합 MuGFET 소자설계 가이드라인 (Device Design Guideline to Reduce the Threshold Voltage Variation with Fin Width in Junctionless MuGFETs)

  • 이승민;박종태
    • 한국정보통신학회논문지
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    • 제18권1호
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    • pp.135-141
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    • 2014
  • 본 연구에서는 무접합 MuGFET의 핀 폭에 따른 문턱전압의 변화를 줄이기 위한 소자 설계 가이드라인을 제시하였다. 제작된 무접합 MuGFET으로부터 핀 폭이 증가할수록 문턱전압의 변화가 증가하는 것을 알 수 있었다. 무접합 MuGFET의 핀 폭에 따른 문턱전압의 변화를 줄이기 위한 소자 설계가이드라인으로 게이트 유전체, 실리콘박막의 두께, 핀 수를 최적화 하는 연구를 3차원 소자 시뮬레이션을 통해 수행하였다. 고 유전율을 갖는 $La_2O_3$ 유전체를 게이트 절연층으로 사용하거나 실리콘 박막을 최대한 얇게 하므로 핀 폭이 증가해도 문턱전압의 변화율을 줄일 수 있음을 알 수 있었다. 특히 유효 채널 폭을 같게 하면서 핀 수를 많게 하므로 문턱전압 변화율과 문턱전압 아래 기울기를 작게 하는 것이 무접합 MuGFET의 최적의 소자 설계 가이드라인임을 알 수 있었다.

용접부 품질향상을 위한 지능형 용접 와이어 공급 장치 개발 (Development of Intelligent Filler Wire Feeding Device for Improvement of Weld quality)

  • 이재석;손영일;박기영;이경돈
    • 한국정밀공학회지
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    • 제23권7호
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    • pp.59-66
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    • 2006
  • In laser welding, automatic seam tracking is important to adjust the laser head position in real time as it moves along the seam. Also if the joint gap is occurred, filling the missing material into the joint gap is necessary to prevent welding defects and bad welding quality. In general, the joint gap width is not constant along the seam due to a variety of reason. So it is essential to control the filler wire speed into the joint gap to acquire good welding quality. This paper describes an intelligent filler wire feeding device which can control 3-dimensional seam tracking and the filler wire speed by measuring the gap position and the joint gap width in laser welding. We call this device as Smart Micro Control system(SMC). To achieve this objective, we assessed weld quality in 2mm sheets of A16061 which had various gap width by using the developed device. From the experimental results, It was found the possibility that the developed device could be used in welding various 3-dimensional structures.

Influence of Emitter Width on the Performance of 975-nm (In,Ga)(As,P)/(Al,Ga)As High-power Laser Diodes

  • Yang, Jung-Tack;Kim, Younghyun;Pournoury, Marzieh;Lee, Jae-Bong;Bang, Dong-Soo;Kim, Tae-Kyung;Choi, Woo-Young
    • Current Optics and Photonics
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    • 제3권5호
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    • pp.445-450
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    • 2019
  • The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation's accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and $90{\mu}m$. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

Effect of Internal Fluid Resonance on the Performance of a Floating OWC Device

  • Cho, Il Hyoung
    • 한국해양공학회지
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    • 제35권3호
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    • pp.216-228
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    • 2021
  • In the present study, the performance of a floating oscillating water column (OWC) device has been studied in regular waves. The OWC model has the shape of a hollow cylinder. The linear potential theory is assumed, and a matched eigenfunction expansion method(MEEM) is applied for solving the diffraction and radiation problems. The radiation problem involves the radiation of waves by the heaving motion of a floating OWC device and the oscillating pressure in the air chamber. The characteristics of the exciting forces, hydrodynamic forces, flow rate, air pressure in the chamber, and heave motion response are investigated with various system parameters, such as the inner radius, draft of an OWC, and turbine constant. The efficiency of a floating OWC device is estimated in connection with the extracted wave power and capture width. Specifically, the piston-mode resonance in an internal fluid region plays an important role in the performance of a floating OWC device, along with the heave motion resonance. The developed prediction tool will help determine the various design parameters affecting the performance of a floating OWC device in waves.

A Small Scaling Lateral Trench IGBT with Improved Electrical Characteristics for Smart Power IC

  • Moon, Seung Hyun;Kang, Ey Goo;Sung, Man Young
    • Transactions on Electrical and Electronic Materials
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    • 제2권4호
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    • pp.15-18
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    • 2001
  • A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

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스마트 파워 IC를 위한 향상된 전기특성의 소규모 횡형 트랜치 IGBT (A Small Scaling Lateral Trench IGBT with Improved Electrical Characteristics for Smart Power IC)

  • 문승현;강이구;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.267-270
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    • 2001
  • A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

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Ergonomic Design of Necklace Type Wearable Device

  • Lee, Jinsil;Ban, Kimin;Choe, Jaeho;Jung, Eui S.
    • 대한인간공학회지
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    • 제36권4호
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    • pp.281-292
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    • 2017
  • Objective: This study aims to identify important physical design variables in designing a necklace type wearable device, and to present design guidelines to maximize comfort that a user feels upon wearing the device. Background: Interests in fitness culture and personal health are on the rise recently. In such a situation, demand for necklace type wearable devices is projected to increase a lot, as the devices enable users to use their hands freely and to enjoy various contents through connection with mobile devices. However, the necklace type wearable device's comfort was assessed to have the lowest comfort in a running situation, where human body moves up and down and left and right more than other devices wearable on other human body parts. Therefore, the usability of a necklace type wearable device was low. In this regard, studies on identification of the variables affecting user comfort upon wearing a necklace type wearable device and on physical design direction maximizing comfort and usability are needed. Method: A pretest and a main test were carried out to draw the direction of necklace type wearable device design. In the pretest, wearing evaluation on the diverse types of devices released in the market was conducted to draw physical design variables of the devices affecting comfort. Furthermore, variables significantly affecting the comfort of a device were selected through an analysis of variance (ANOVA). In the main test, anthropometry was performed, and information on anthropometric items corresponding to the design variables selected in the pretest was acquired. Based on the pretest results and the anthropometric information in the main test, the present study produced design guidelines maximizing the comfort of a necklace type wearable device with regard to major design variables upon dynamic tasks. Results: According to the pretest results, the variables having effects on comfort were the angle of side points, width, and height. Due to interactions between variables, those need to be simultaneously considered upon designing a device. Upon dynamic tasks, the angle of side points and width of a device was designed to be smaller than mean angle of the trapezius muscle and neck width, and thus attachment to human body was high. As height was designed to be larger than mean neck front and rear point width, comfort was higher due to feeling of stability. Conclusion: Because user sensitivity to comfort was high at human body's inflection points, a device needs to be designed for users not to feel high pressure on specific body parts with the device fitting human body shape well. A design considering user's situation is also required in further studies.