• International Journal of Naval Architecture and Ocean Engineering
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• v.9 no.6
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• pp.668-676
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• 2017

A two-dimensional numerical investigation is performed to study the influence of slot width of multi-stage stationary floating overtopping wave energy devices on overtopping flow rate and performance. The hydraulic efficiency based on captured crest energy of different device layouts is compared with that of single-stage device to determine the effect of the geometrical design. The results show optimal trends giving a huge increase in overtopping energy. Plots of efficiency versus the relative slot width show that, for multi-stage devices, the greatest hydraulic efficiency is achieved at an intermediate value of the variable within the parametric range considered, relative slot width of 0.15 and 0.2 depending on design layouts. Moreover, an application of adaptive slot width of multi-stage device is investigated. The numerical results show that the overall hydraulic efficiency of non-adaptive and adaptive slot devices are approximately on par. The effect of adaptive slot width on performance can be negligible.

• Structural Engineering and Mechanics
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• v.74 no.1
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• pp.19-32
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• 2020

Metallic energy-dissipation dampers are widely used in structures. They are comprised of an added damping and stiffness (ADAS) device with many parallel, diamond-shaped hole plates, the neck width of which is an important parameter. However, no studies have analyzed the neck width's influence on the ADAS device's performance. This study aims to better understand that influence by conducting a pseudo-static test on ADAS, with three different neck widths, and performing finite element analysis (FEA) models. Based on the FEA results and mechanical theory, a design neck width range was proposed. The results showed that when the neck width was within the specified range, the diamond-shaped hole plate achieved an ideal yield state with minimal stress concentration, where the ADAS had an optimal energy dissipation performance and the brittle shear fracture on the neck was avoided. The theoretical values of the ADAS yield loads were in good agreement with the test values. While the theoretical value of the elastic stiffness was lower than the test value, the discrepancy could be reduced with the proposed modified coefficient.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.1
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• pp.8-14
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• 2012

The device performances of n-channel MuGFET with different fin numbers and fin widths but the total effective channel width is constant have been characterized. Two kinds of Pi-gate devices with fin number=16, fin width=55nm, and fin number=14, fin width=80nm have been used in characterization. The threshold voltage, effective electron mobility, threshold voltage roll-off, inverse subthreshold slope, PBTI, hot carrier degradation, and drain breakdown voltage have been characterized. From the measured results, the short channel effects have been reduced for narrow fin width and large fin numbers. PBTI degradation was more significant in devices with large fin number and narrow fin width but hot carrier degradation was similar for both devices. The drain breakdown voltage was higher for devices with narrow fin width and large fin numbers. With considering the short channel effects and device degradation, the devices with narrow fin width and large fin numbers are desirable in the device layout of MuGFETs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.135-141
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• 2014

In this paper, the device design guideline to reduce the threshold voltage variation with fin width in junctionless MuGFET has been suggested. It has been observed that the threshold voltage variation was increased with increase of fin width in junctionless MuGFETs. To reduce the threshold voltage variation with fin width in junctionless MuGFETs, 3-dimensional device simulation with different gate dielectric materials, silicon film thickness, and an optimized fin number has been performed. The simulation results showed that the threshold voltage variation can be reduced by the gate dielectric materials with a high dielectric constant such as $La_2O_3$ and the silicon film with ultra-thin thickness even though the fin width is increased. Particularly, the reduction of the threshold voltage variation and the subthreshold slope by reducing the fin width and increasing the fin numbers is known the optimized device design guideline in junctionless MuGFETs.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.7 s.184
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• pp.59-66
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• 2006

In laser welding, automatic seam tracking is important to adjust the laser head position in real time as it moves along the seam. Also if the joint gap is occurred, filling the missing material into the joint gap is necessary to prevent welding defects and bad welding quality. In general, the joint gap width is not constant along the seam due to a variety of reason. So it is essential to control the filler wire speed into the joint gap to acquire good welding quality. This paper describes an intelligent filler wire feeding device which can control 3-dimensional seam tracking and the filler wire speed by measuring the gap position and the joint gap width in laser welding. We call this device as Smart Micro Control system(SMC). To achieve this objective, we assessed weld quality in 2mm sheets of A16061 which had various gap width by using the developed device. From the experimental results, It was found the possibility that the developed device could be used in welding various 3-dimensional structures.

• Current Optics and Photonics
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• v.3 no.5
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• pp.445-450
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• 2019

The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation's accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and $90{\mu}m$. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

• Journal of Ocean Engineering and Technology
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• v.35 no.3
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• pp.216-228
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• 2021

In the present study, the performance of a floating oscillating water column (OWC) device has been studied in regular waves. The OWC model has the shape of a hollow cylinder. The linear potential theory is assumed, and a matched eigenfunction expansion method(MEEM) is applied for solving the diffraction and radiation problems. The radiation problem involves the radiation of waves by the heaving motion of a floating OWC device and the oscillating pressure in the air chamber. The characteristics of the exciting forces, hydrodynamic forces, flow rate, air pressure in the chamber, and heave motion response are investigated with various system parameters, such as the inner radius, draft of an OWC, and turbine constant. The efficiency of a floating OWC device is estimated in connection with the extracted wave power and capture width. Specifically, the piston-mode resonance in an internal fluid region plays an important role in the performance of a floating OWC device, along with the heave motion resonance. The developed prediction tool will help determine the various design parameters affecting the performance of a floating OWC device in waves.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of the Ergonomics Society of Korea
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• v.36 no.4
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• pp.281-292
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• 2017

Objective: This study aims to identify important physical design variables in designing a necklace type wearable device, and to present design guidelines to maximize comfort that a user feels upon wearing the device. Background: Interests in fitness culture and personal health are on the rise recently. In such a situation, demand for necklace type wearable devices is projected to increase a lot, as the devices enable users to use their hands freely and to enjoy various contents through connection with mobile devices. However, the necklace type wearable device's comfort was assessed to have the lowest comfort in a running situation, where human body moves up and down and left and right more than other devices wearable on other human body parts. Therefore, the usability of a necklace type wearable device was low. In this regard, studies on identification of the variables affecting user comfort upon wearing a necklace type wearable device and on physical design direction maximizing comfort and usability are needed. Method: A pretest and a main test were carried out to draw the direction of necklace type wearable device design. In the pretest, wearing evaluation on the diverse types of devices released in the market was conducted to draw physical design variables of the devices affecting comfort. Furthermore, variables significantly affecting the comfort of a device were selected through an analysis of variance (ANOVA). In the main test, anthropometry was performed, and information on anthropometric items corresponding to the design variables selected in the pretest was acquired. Based on the pretest results and the anthropometric information in the main test, the present study produced design guidelines maximizing the comfort of a necklace type wearable device with regard to major design variables upon dynamic tasks. Results: According to the pretest results, the variables having effects on comfort were the angle of side points, width, and height. Due to interactions between variables, those need to be simultaneously considered upon designing a device. Upon dynamic tasks, the angle of side points and width of a device was designed to be smaller than mean angle of the trapezius muscle and neck width, and thus attachment to human body was high. As height was designed to be larger than mean neck front and rear point width, comfort was higher due to feeling of stability. Conclusion: Because user sensitivity to comfort was high at human body's inflection points, a device needs to be designed for users not to feel high pressure on specific body parts with the device fitting human body shape well. A design considering user's situation is also required in further studies.