• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.517-531
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• 1999

This paper presents the development of the 2-mode variable gain high power amplifier for a transmitter of INMARSAT-M operating at L-band(1626.5-1646.5 MHz). This SSPA(Solid State Power Amplifier) is amplified 42 dBm in high power mode and 36 dBm in low power mode for INMARSAT-M. The allowable error sets +1 dBm of an upper limit and -2 dBm of a lower limit, respectively. To simplify the fabrication process, the whole system is designed by two parts composed of a driving amplifier and a high power amplifier, The HP's MGA-64135 and Motorola's MRF-6401 are used for driving amplifier, and the ERICSSON's PTE-10114 and PTF-10021 are used the high power amplifier. The SSPA was fabricated by the circuits of RF, temperature compensation and 2-mode gain control circuit in aluminum housing. The gain control method was proposed by controlling the voltage for the 2-mode. In addition, It has been experimentally verified that the gain is controlled for single tone signal as well as two tone signals. The realized SSPA has 42 dB and 36 dB for small signal gain within 20 MHz bandwidth, and the VSWR of input and output port is less than 1.5:1 The minimum value of the 1 dB compression point gets 5 dBm for 2-mode variable gain high power amplifier. A typical two tone intermodulation point has 32.5 dBc maximum which is single carrier backed off 3 dB from 1 dB compression point. The maximum output power of 43 dBm was achieved at the 1636.5 MHz. These results reveal a high power of 20 Watt, which was the design target.the design target.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.10
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• pp.1169-1176
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• 2010

The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• ETRI Journal
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• v.30 no.4
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• pp.526-534
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• 2008

This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.681-689
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• 2010

We will demonstrate a novel topology for the feedforward amplifier. This amplifier does not use a delay element thus providing an efficiency enhancement and a size reduction by employing a distributed element negative group delay circuit. The insertion loss of the delay element in the conventional feedforward amplifier seriously degrades the efficiency. Usually, a high power co-axial cable or a delay line filter is utilized for a low loss, but the insertion loss, cost and size of the delay element still acts as a bottleneck. The proposed negative group delay circuit removes the necessity of the delay element required for a broadband signal suppression loop. With the fabricated 2-stage distributed element negative group delay circuit with -9 ns of total group delay, a 0.2 dB of insertion loss, and a 30 MHz of bandwidth for a wideband code division multiple access downlink band, the feedforward amplifier with the proposed topology experimentally achieved a 19.4 % power added efficiency and a -53.2 dBc adjacent channel leakage ratio with a 44 dBm average output power.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.12
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• pp.80-87
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• 2013

A novel instrumentation amplifier(IA) using positive polarity current-conveyor(CCII+) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of two CCII+, three resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into two CCII+ used voltage and current follower converts into same currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the CCII+ and used commercial op-amp LF356. Simulation results show that voltage follower used CCII+ has offset voltage of 0.21mV at linear range of ${\pm}$4V. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the gain of 60dB was 400kHz. The IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 130mW at supply voltage of ${\pm}$5V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1098-1103
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• 2013

A low-noise amplifier(LNA) using series RLC matching network and resistive feedback at 8 GHz is presented. Inductive degeneration is used for the input matching with which the proposed LNA shows quite a wide bandwidth in terms of $S_{21}$. An equivalent circuit model is deduced for input matching by conversion from parallel circuit to series resonant circuit. By exploiting the resistive feedback and series RLC input matching, fully integrated LNA achieves maximum $S_{21}$ of 8.5 dB(peak to -3 dB bandwidth is about 3.5 GHz) noise figure of 5.9 dB, and IIP3 of 1.6 dBm while consuming 7 mA from 1.2 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1220-1228
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• 2010

In this paper, we suggest a scheme to develop an efficient discrete nonlinear model based on polynomial structure for a RF power amplifier(PA). We describe a procedure to extract a discrete nonlinear model such as Taylor series or memory polynomial by sampling the input and output signal of RF PA. The performance of the model is analyzed varying the model parameters such as sample rate, nonlinear order, and memory depth. The results show that the relative error of the model is converged if the parameters are larger than specific values. We suggest an efficient modeling scheme considering complexity of the discrete model depending on the values of the model parameters. Modeling efficiency index(MEI) is defined, and it is used to extract optimum values for the model parameters. The suggested scheme is applied to discrete modeling of various RF PAs with various input signals such as WCDMA, WiBro, etc. The suggested scheme can be applied to the efficient design of digital predistorter for the wideband transmitter.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.776-779
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• 2004

A RF front-end module is designed for GIS(Gas Insulated Substation) which is employed for effective and efficient very high voltage transmission. Major advantage of the unit is improved PO detection sensitivity through minimizing the effect of surrounding interference signals, which is achieved by controlling the gain and the selection of the frequency band, for the precise detection of any UHF PO (Partial Discharge) disturbance occurred in the GIS due to some unwanted problems. For the development of the module, various switches for providing selected signal paths, wideband LNA, 3 BPF for selecting detection frequency band, and video detector are designed, fabricated and measured on 1 mm FR4 substrate with various RF components. The detection sensitivity of the unit was <-60 dBm that is sufficient to detect UHF PO signals as low as 1 pC. It is believed that the value is enough to detect the signal occurred in GIS.