• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• 한국표면공학회지
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• 제32권3호
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• pp.253-256
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• 1999

Wet plating has been initiated and developed as a major surface finishing technology as of the long customized and highly productive process until now. As the external compression by virtue of the environmental preservation becomes stricter, there has been new move to adapt dry plating line instead of conventional wet plating one in domestic surface finishing industry. Dry plating, so-called, plasma surface technology has been developed in semiconducting industry and becomes a key technology to be useful as an alternative to wet plating in surface finishing industry. The historical progress of domestic surface finishing industry was outlined with the background on the adaptation of three dry plating processes-plasma spraying, plasma nitriding and ion plating. The present status of domestic industrial activity was covered on major alternative to wet plating.

• 한국응용과학기술학회지
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• 제24권1호
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• pp.1-9
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• 2007

It prepared the $TiO_2$ powder which has photo-catalytic activity in the visible-light by the wet process with titanium oxysulfate. The titanium $dioxide(TiO_2)$ by the wet process creates a new absorption band in the visible light region, and is expected to create photocatalytic activity in this region. Anatase $TiO_2$ powder which has photocatalytic activity in the visible light region, is treated using microwave and radio-frequency(RF) plasma. But, the $TiO_2$ powder for the visible light region, which also can be easily produced by wet process. The wet process $TiO_2$ absorbed visible light between 400nm and 600nm, and showed a high activity in this region, as measured by the oxidation removal of aceton from the gas phase. The AH-380 sample appears the yellow color to be strong, the catalytic activity in the visible ray was excellent in comparison with the plasma-treated $TiO_2$. The AH-380 $TiO_2$ powder, which can be easily produced on a large scale, is expected to have higher efficiency in utilizing solar energy than the plasma-treated $TiO_2$ powder.

• 한국산업융합학회 논문집
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• 제22권3호
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• pp.243-250
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• 2019

The nanosecond laser assisted ablation have been investigated. The biocompatable polymer PMMA was employed as the target material and the two distinctive surface conditions were test. The first surface condition is a dry surface for which the target surface is exposed to air and the second surface condition is the wet surface for which the target surface is covered with dehydrated water. The ablation volume, the laser induced acoustic wave, the laser induced plasma were investigated for both wet and dry condition. The nanosecond laser pulse ablatied more on the wet surface compared to the dry surface. The enhanced ablation of wet surface is attributed to the confined acoustic wave and the laser-induced plasma in the liquid layer.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.146-150
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• 2021

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.164-173
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• 2017

Across the most industry, the demand for nanoparticles is increasing. Therefore, many studies have been carried out to synthesize nanoparticles using various methods. The aim of this paper is to introduce an industry-applicable as well as financially and environmentally effective solution plasma process. The solution plasma process involves fewer chemicals than the traditional kit, and can be used to replace many of the chemical agents employed in previous synthesis of nanoparticles into plasma. In this study, this process is compared to the wet-reaction process that has thus far been widely used in the most industry. Furthermore, the solution plasma process has been classified into four different types (in-solution, out of solution, direct type, and remote type), according to its plasma occurrence position and plasma types. Thus, the source of radicals, nanoparticle synthesis, and modification methods are explained for each design. Lastly, unlike nanoparticles with hydrophilic functional groups that are made inside the solution, a nanoparticle synthesis and modification method to create a hydrophobic functional group is also proposed.

• 한국표면공학회지
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• 제37권6호
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• pp.313-318
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• 2004

Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.

• 한국진공학회지
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• 제18권5호
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• pp.337-345
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• 2009

패키지 기판의 지름 $100{\mu}m$ 이하 미세 드릴 구멍의 경우 습식 디스미어 공정만으로는 구멍 내부의 스미어를 효과적으로 제거할 수 없다. 본 연구에서는 습식 디스미어 공정의 이전 단계에서 대기압 플라즈마를 처리하여 소수성의 기판 표면을 친수성으로 개질하고자 하였다. 대기압 플라즈마 공정은 리모트 DBD 방식의 전극을 이용하여 패키지 제조 공정에 적합한 인라인 형태의 장비로 구성되었다. 대기압 플라즈마를 처리한 결과 접촉각 기준으로 $71^{\circ}$의 소수성 절연 필름 표면이 $30^{\circ}$ 정도의 친수성 표면으로 개질되었다. 대기압 플라즈마 처리 유무에 따른 습식 디스미어 공정의 특성을 평가하기 위하여 절연 필름의 두께, 드릴 구멍 지름, 표면 조도의 변화를 측정하였는데, 대기압 플라즈마 처리 시 기판 전면에서 공정 특성의 균일도가 향상되는 것을 확인하였다. 또한 대기압 플라즈마 처리 유무에 따른 드릴 구멍의 SEM 사진 분석 결과 대기압 플라즈마 처리 시 구멍 내부의 스미어가 효과적으로 제거됨을 실험적으로 확인하였다.

• 한국산업보건학회지
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• 제29권3호
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• pp.351-357
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• 2019

Objectives: The objectives of this study were to investigate fungal contamination in a 31-year old university building in Seoul, Korea, and to study the inactivation of fungi using cold atmospheric pressure plasma(CAP). Methods: To investigate the fungal contamination in a university building, air samples were collected from five locations in the building, including two study rooms, a storage room, a laboratory, and a basement. The sampling was performed in a dry season(February to April) and in a wet season(July). To study the inactivation efficacy of fungi by CAP, airborne fungal concentrations were measured before and after the operation of the CAP generator. Results: Humidity was an important factor affecting fungal growth. The airborne fungal concentrations determined in the wet season(July) were significantly higher than those determined in the dry season(February to April). In the basement, the values determined in the dry and wet season were 319 and $3,403CFU/m^3$, respectively. The inactivation efficiency of fungi by CAP was 83-90% over five to nine days of operation. Conclusions: The university building was highly contaminated by airborne fungi, especially in summer. It is concluded that humidity is an important factor affecting fungal growth and CAP is a highly useful technique for inactivation of indoor airborne fungi.

• 한국표면공학회지
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• 제48권1호
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• pp.7-10
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• 2015

Recently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellent environmental stability, high mobility, wide-band gap energy and high transparency, and investigated through the method using vacuum system and wet solution. In the case of the method using wet solution, process is very simple, however, annealing process should be included. In this study, to overcome the problem of annealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics such as on/off ration and mobility of device were investigated.