한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제37권6호
  • /
  • Pages.313-318
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  • 2004
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지

습식공정으로 형성된 구리산화물 나노와이어의 전계방출특성 향상

Enhancement of Field Emission Characteristics of CuO Nanowires Formed by Wet Chemical Process

  • 성우용 (서울대학교 기계항공공학부) ;
  • 김왈준 (서울대학교 기계항공공학부) ;
  • 이승민 (서울대학교 기계항공공학부) ;
  • 이호영 (서울대학교 기계항공공학부) ;
  • 박경호 (아주대학교 분자과학기술학과) ;
  • 이순일 (아주대학교 분자과학기술학과) ;
  • 김용협 (서울대학교 기계항공공학부)
  • 발행 : 2004.12.01
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초록

Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.

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참고문헌

  1. S. lijima, Nature (London), 354 (1991) 56
  2. Y D. Lee, J. A. Lee, S. I. Moon, J. H. Park, J.H. Han, J. E. Yoo, Y H. Lee, S. Nahm, B. K Ju, J. of KIEEME, 17 (2004) 541-544
  3. C. J. Lee, T J. Lee, S. C. Lyu, Y Zhang, H. Ruh,H. J. Lee, Appl. Phys. Lett., 81 (2002) 3648-3650 https://doi.org/10.1063/1.1518810
  4. L. Dong, J. Jiao, D. W. Tuggle, J. M. Petty, Appl. Phys. Lett., 82 (2003) 1096-1098 https://doi.org/10.1063/1.1554477
  5. E. Muller, T. T Song, Elsevier, NY, (1969)
  6. K M. Bowkett, D. A. Smith, Elsevier, NY, (1970)
  7. B. K Ju, J. H. Jung, S. J. Lee, Y. H. Lee, K H. Tchah, M. H. Oh, J. of KIEEME, (1998) 508-516
  8. J. H. Jung, B. K. Ju, Y. H. Lee, K. C. Park, J.Jang, Y. H. Jung, C. J. Kim, M. H. ah, 9th IVMC, St, Petersburg, (1996) 231-234
  9. B. J. Love, P. F. Packman, J. Adhesion, 40 (1993) 139 https://doi.org/10.1080/00218469308031280
  10. W. C. Gau, T. C. Chang, Y. S. Lin, J. C. Hu, L. J. Chen, C. Y. Chang, C. L. Cheng, J. Vac. Sci. Technol. A, 18 (2000) 656-660
  11. S.-e. Chang, J.-M. Shieh, K-e. Lin, B.-T Dai, T-C. Wang, C.-F. Chen, M.-S. Feng, Y-H. Li, C.-P. Lu, J. Vac. Sci. Technol. B, 19 (2001) 767-773 https://doi.org/10.1116/1.1368673
  12. S. Yoshida, H. Ishida, J. Adhesion, 16 (1984) 217 https://doi.org/10.1080/00218468408074917
  13. Y. Sawada, H. Tamaru, M. Kogoma, M. Kawase, K Hashimoto, Appl. Phys., 29 (1996) 2539-2544
  14. J. h. ah, J. G. Lee, e. G. Lee, Materials Chemistry and Physics, 73 (2002) 227-234
  15. Hung-Hsiao Lin, Chih-Yuan Wang, Han e. Shih, Jin-Ming Chen, Chien-Te Hsieh, J. Appl. Phys. 95 (2004) 5889-5895 https://doi.org/10.1063/1.1690114
  16. B. K Ju, KIDS, 2 (2001) 6-16