• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• ETRI Journal
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• v.27 no.3
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• The korean journal of orthodontics
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• v.23 no.1 s.40
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• pp.75-88
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• 1993

Recent reports indicate that shorter etching times than 60 seconds can be adopted without affecting the bond strength and clinical disadvantages. The purpose of this in vitro study was to compare the shear bone strength and to measure depth of etch at different etching time length. One hundred and eight extracted bovine lower central incisors were embedded each in a tooth cup with cold-cure acrylic resin. The facial surfaces of the teeth were ground wet with 600-, 800-, 1000-, and 1200-grit Sic papers, and finally polished with a water slurry of extrafine silicon carbide powder, washed with tap water, and dried with hot air. Nine groups of nine prepared teeth were etched with a commercial($38\%$ phosphoric acid solution) for 0, 5, 10, 15, 20, 30, 60, 90, and 120 seconds, respectively, rinsed with tap water, and dried with hot air. One conditioned teeth from every group was selected randomly for the scanning electron microscopic examination, and the remaining eight teeth of the groups were used for measuring the push shear bond strength after bonding brackets and immensing them in the $36.5^{\circ}C$ water for 24 hours. Another nine groups of three teeth were used for measuring the depth of etch and surface roughness with a surface profilometer. after pieces of adhesive tape of 3mm inner diameter positioned on the ground enamel surfaces, and etched with the above mentioned. The data obtained form the above expeiments were analysed statistically with one way ANOVA and Dunkan's multiple range test with the $95\%$ confidence level. The results and conclusion of the study were as follows; 1. The results of shear bond strength for the given experimental etching times were not statistically different, but showed the tendency of decreasing shear bone strength after over 60 seconds etching times. 2. On the scanning election microscopic examination, it was observed that the morphological patterns of etched enamel surface for 5 to 20 seconds were similar and consitent, and those for 30 to 120 seconds showed increasing over-etched patterns depending on the length of etching times. 3. The depth of etch was increased almost proportionally by the length of etching times, but it was not associated with the shear bond strength. 4. The surface roughness increased depending on the length of etching times, but it was not associated with the shear bond strength. 5. This experiment indicated that proper etching time with $38\%$ phosphoric acid solution is in the range of 5 to 30 seconds.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.304-313
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• 2001

In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1893-1895
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• 2001

In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1613-1617
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• 2003

In the phosphoric acid based etchant, the dissolution rates of Mo films were measured by microgravimetry and the corrosion potentials of Mo and Al were estimated by Tafel plot method with various concentrations of nitric acid. Dissolution rate of Mo increased with the nitric acid concentration and reached a limiting value at high concentration of nitric acid in ambient condition. Corrosion potentials of Mo and Al shifted to positive direction and the difference between potentials of both metals was about 1,100 mV and 1,200 mV with 1% and above 4% of $HNO_3$, respectively. For a Mo/Al bilayers, the dissolution rate inversion is the main reason for good taper angle in shower etching process. Taper angles are observed by scanning electron microscope (SEM) after wet etching process for Mo/Al layered films with different concentrations of $HNO_3$. In the etch side profile, it was found that Al corroded faster than Mo below 4% of $HNO_3$ in dip etching process, however, Mo corroded faster above 4%. Trend for variation of taper angle of etched side of Mo/Al layered film can be explained by considering the effect corrosion rates of both metals with various concentrations of $HNO_3$.

• Journal of Dental Rehabilitation and Applied Science
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• v.27 no.2
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• pp.161-174
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• 2011

The purpose of this study was to evaluate the effect of ethanol addition on efficacy of two-step total-etch adhesive under over-wet condition by measurement of remaining volatile part (RVP), microtensile bond strength (${\mu}TBS$), and degree of conversion (DC). Two-step total-etch adhesive, Optibond Solo Plus (Kerr, Orange, USA), was used. Experimental groups were divided into 8 groups: Group 1 (only 10 ${\mu}l$ adhesive), Group 2 (mixture of 3 ${\mu}l$ distilled water and 10 ${\mu}l$ adhesive), From Group 3 to Group 8 (mixture of 3 ${\mu}l$ distilled water, 10 ${\mu}l$ adhesive, and ethanol added in 1 ${\mu}l$ increment from 1 ${\mu}l$ to 6 ${\mu}l$). The mixtures were placed on slide glass and evaporated for 10 s, 30 s, and 60 s by air-drying. The weight of RVP was measured by precision weight. Same procedures were performed for ${\mu}TBS$ test and measurement of DC. The condition of mixed solution was observed under light microscope. For RVP weight, the weights of experimental groups except for group 1 decreased with the increase of air-drying time (p<0.05). The DC increased with the increase of air-drying time in only group 5 and 6 (p<0.05). The ${\mu}TBS$ increased with the increase of air-drying time in group only 5, 6, and 7 (p<0.05). The phase separation was examined and water blisters were diminished with the increase of air-drying time in group 5, 6, 7, and 8. Within the limits of this study, ethanol additionally applied to adhesive decreased RVP and increased DC and ${\mu}TBS$ under over-wet condition. It was shown that the addition of ethanol to two-step total-etch adhesive under over-wet condition would remove water and increase the efficacy of adhesive.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.474-479
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• 2020

The etching solution for slimming of glass substrates was manufactured and HF was used as the main ingredient of wet etching solutions. Various types of strong acids such as HCl, HNO₃, H₂SO₄, amino acids and carboxylic acids such as citric acid, and etched solutions, respectively, were used to measure the etching rates and changes in surface shape of the glass. Regardless of the type of strong acids, the etching rate of the glass increased linearly as the added amount increased, and the sludge removal effect of the glass surface was also shown. The etching solution containing HCl showed more efficient results than other strong acids in the etching rate and the effect of removing sludge. The addition of carboxylic acid did not significantly affect the variation of etching rate, but had the effect of removing sludge. However, if amino acids were added, changes in etching rate and sludge removal were not significant.